BE814281A - Procede pour la fabrication d'une multiplicite de microplaquettes semiconductrices - Google Patents

Procede pour la fabrication d'une multiplicite de microplaquettes semiconductrices

Info

Publication number
BE814281A
BE814281A BE143701A BE143701A BE814281A BE 814281 A BE814281 A BE 814281A BE 143701 A BE143701 A BE 143701A BE 143701 A BE143701 A BE 143701A BE 814281 A BE814281 A BE 814281A
Authority
BE
Belgium
Prior art keywords
microplatelets
multiplicity
semiconductor
manufacture
semiconductor microplatelets
Prior art date
Application number
BE143701A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE814281A publication Critical patent/BE814281A/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
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    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
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    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
BE143701A 1973-04-30 1974-04-26 Procede pour la fabrication d'une multiplicite de microplaquettes semiconductrices BE814281A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35571873A 1973-04-30 1973-04-30
US500164A US3924323A (en) 1973-04-30 1974-08-23 Method of making a multiplicity of multiple-device semiconductor chips and article so produced

Publications (1)

Publication Number Publication Date
BE814281A true BE814281A (fr) 1974-08-16

Family

ID=26998976

Family Applications (1)

Application Number Title Priority Date Filing Date
BE143701A BE814281A (fr) 1973-04-30 1974-04-26 Procede pour la fabrication d'une multiplicite de microplaquettes semiconductrices

Country Status (7)

Country Link
US (1) US3924323A (fr)
BE (1) BE814281A (fr)
CA (1) CA1003122A (fr)
DE (1) DE2418813A1 (fr)
FR (1) FR2227641B1 (fr)
GB (1) GB1462275A (fr)
NL (1) NL7405760A (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2930460C2 (de) * 1979-07-27 1986-07-17 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen hochspannungsfester Mesadioden
FR2524707B1 (fr) * 1982-04-01 1985-05-31 Cit Alcatel Procede d'encapsulation de composants semi-conducteurs, et composants encapsules obtenus
DE3524301A1 (de) * 1985-07-06 1987-01-15 Semikron Gleichrichterbau Verfahren zum herstellen von halbleiterelementen
DE3931495C2 (de) * 1989-09-21 1997-06-26 Itt Ind Gmbh Deutsche Verfahren zur "fließenden" Feinklassifizierung von Kapazitätsdioden
US5521125A (en) * 1994-10-28 1996-05-28 Xerox Corporation Precision dicing of silicon chips from a wafer
US6083811A (en) * 1996-02-07 2000-07-04 Northrop Grumman Corporation Method for producing thin dice from fragile materials
US5904546A (en) * 1996-02-12 1999-05-18 Micron Technology, Inc. Method and apparatus for dicing semiconductor wafers
US6881611B1 (en) 1996-07-12 2005-04-19 Fujitsu Limited Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device
KR19990063586A (ko) * 1996-07-12 1999-07-26 아끼구사 나오유끼 반도체 장치의 제조 방법 및 반도체 장치 제조용 금형 및 반도체 장치 및 그 실장방법
KR100568571B1 (ko) * 1997-05-09 2006-04-07 시티즌 도케이 가부시키가이샤 반도체 패키지의 제조 방법 및 집합 회로 기판
FR2782843B1 (fr) * 1998-08-25 2000-09-29 Commissariat Energie Atomique Procede d'isolation physique de regions d'une plaque de substrat
DE19850873A1 (de) 1998-11-05 2000-05-11 Philips Corp Intellectual Pty Verfahren zum Bearbeiten eines Erzeugnisses der Halbleitertechnik
EP1065059B1 (fr) * 1999-07-02 2007-01-31 Canon Kabushiki Kaisha Procédé de production d'une tête à éjection de liquide, tête à éjection de liquide ainsi produite, cartouche, appareil d'éjection de liquide, procédé de production d'une plaque de silicium et plaque de silicium ainsi produite
JP4403631B2 (ja) * 2000-04-24 2010-01-27 ソニー株式会社 チップ状電子部品の製造方法、並びにその製造に用いる擬似ウエーハの製造方法
JP2001313350A (ja) * 2000-04-28 2001-11-09 Sony Corp チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法
JP3631956B2 (ja) * 2000-05-12 2005-03-23 富士通株式会社 半導体チップの実装方法
DE10202881B4 (de) * 2002-01-25 2007-09-20 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterchips mit einer Chipkantenschutzschicht, insondere für Wafer Level Packaging Chips
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
AU2003234403A1 (en) * 2002-05-16 2003-12-02 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices
US7169691B2 (en) * 2004-01-29 2007-01-30 Micron Technology, Inc. Method of fabricating wafer-level packaging with sidewall passivation and related apparatus
TWI294168B (en) * 2006-04-18 2008-03-01 Siliconware Precision Industries Co Ltd Semiconductor package and substrate with array arrangement thereof and method for fabricating the same
EP2109881B1 (fr) * 2007-01-31 2018-09-26 Henkel AG & Co. KGaA Plaquette semi-conductrice revetue d'un materiau charge applicable par centrifugation
US8212369B2 (en) * 2007-01-31 2012-07-03 Henkel Ag & Co. Kgaa Semiconductor wafer coated with a filled, spin-coatable material
US20170330855A1 (en) * 2016-05-13 2017-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. System and Method for Immersion Bonding

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US3411200A (en) * 1965-04-14 1968-11-19 Westinghouse Electric Corp Fabrication of semiconductor integrated circuits
US3343255A (en) * 1965-06-14 1967-09-26 Westinghouse Electric Corp Structures for semiconductor integrated circuits and methods of forming them
US3689357A (en) * 1970-12-10 1972-09-05 Gen Motors Corp Glass-polysilicon dielectric isolation

Also Published As

Publication number Publication date
FR2227641B1 (fr) 1979-02-16
DE2418813A1 (de) 1974-11-14
CA1003122A (en) 1977-01-04
AU6819674A (en) 1975-10-23
US3924323A (en) 1975-12-09
GB1462275A (en) 1977-01-19
NL7405760A (fr) 1974-11-01
FR2227641A1 (fr) 1974-11-22

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