JPS5164371A - - Google Patents
Info
- Publication number
- JPS5164371A JPS5164371A JP50110532A JP11053275A JPS5164371A JP S5164371 A JPS5164371 A JP S5164371A JP 50110532 A JP50110532 A JP 50110532A JP 11053275 A JP11053275 A JP 11053275A JP S5164371 A JPS5164371 A JP S5164371A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P95/00—
-
- H10P32/12—
-
- H10P32/171—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7431243A FR2284982A1 (fr) | 1974-09-16 | 1974-09-16 | Procede de diffusion d'impuretes dans des corps semiconducteurs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5164371A true JPS5164371A (enExample) | 1976-06-03 |
| JPS5238388B2 JPS5238388B2 (enExample) | 1977-09-28 |
Family
ID=9143118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50110532A Expired JPS5238388B2 (enExample) | 1974-09-16 | 1975-09-13 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5238388B2 (enExample) |
| CA (1) | CA1061225A (enExample) |
| DE (1) | DE2540053C2 (enExample) |
| FR (1) | FR2284982A1 (enExample) |
| GB (1) | GB1515318A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5353965U (enExample) * | 1976-10-08 | 1978-05-09 | ||
| JPH04284624A (ja) * | 1991-03-13 | 1992-10-09 | Hitachi Ltd | 半導体基体への不純物の拡散方法 |
| JP2025501548A (ja) * | 2021-12-20 | 2025-01-22 | エイチピエスピ カンパニー リミテッド | ウェハの薄膜に対する炭素ドーピング方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2409791A1 (fr) * | 1977-11-25 | 1979-06-22 | Silicium Semiconducteur Ssc | Appareils de dopage par diffusion de tranches semi-conductrices |
| FR2479278A1 (fr) * | 1980-03-26 | 1981-10-02 | Loic Henry | Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede |
| JPS60236471A (ja) * | 1984-05-10 | 1985-11-25 | 新光電気工業株式会社 | 気密ガラス端子 |
| CN114855261B (zh) * | 2022-03-21 | 2025-01-24 | 西北工业大学 | 一种基于水平梯度凝固法生长化合物半导体单晶的气相掺杂方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2178751B1 (enExample) * | 1972-04-05 | 1974-10-18 | Radiotechnique Compelec |
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1974
- 1974-09-16 FR FR7431243A patent/FR2284982A1/fr active Granted
-
1975
- 1975-09-09 DE DE2540053A patent/DE2540053C2/de not_active Expired
- 1975-09-11 CA CA235,393A patent/CA1061225A/en not_active Expired
- 1975-09-12 GB GB37645/75A patent/GB1515318A/en not_active Expired
- 1975-09-13 JP JP50110532A patent/JPS5238388B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5353965U (enExample) * | 1976-10-08 | 1978-05-09 | ||
| JPH04284624A (ja) * | 1991-03-13 | 1992-10-09 | Hitachi Ltd | 半導体基体への不純物の拡散方法 |
| JP2025501548A (ja) * | 2021-12-20 | 2025-01-22 | エイチピエスピ カンパニー リミテッド | ウェハの薄膜に対する炭素ドーピング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2540053A1 (de) | 1976-03-25 |
| GB1515318A (en) | 1978-06-21 |
| FR2284982A1 (fr) | 1976-04-09 |
| JPS5238388B2 (enExample) | 1977-09-28 |
| FR2284982B1 (enExample) | 1979-02-16 |
| CA1061225A (en) | 1979-08-28 |
| DE2540053C2 (de) | 1983-12-01 |