JPS5238388B2 - - Google Patents

Info

Publication number
JPS5238388B2
JPS5238388B2 JP50110532A JP11053275A JPS5238388B2 JP S5238388 B2 JPS5238388 B2 JP S5238388B2 JP 50110532 A JP50110532 A JP 50110532A JP 11053275 A JP11053275 A JP 11053275A JP S5238388 B2 JPS5238388 B2 JP S5238388B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50110532A
Other languages
Japanese (ja)
Other versions
JPS5164371A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5164371A publication Critical patent/JPS5164371A/ja
Publication of JPS5238388B2 publication Critical patent/JPS5238388B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00
    • H10P32/12
    • H10P32/171

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP50110532A 1974-09-16 1975-09-13 Expired JPS5238388B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431243A FR2284982A1 (fr) 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs

Publications (2)

Publication Number Publication Date
JPS5164371A JPS5164371A (enExample) 1976-06-03
JPS5238388B2 true JPS5238388B2 (enExample) 1977-09-28

Family

ID=9143118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50110532A Expired JPS5238388B2 (enExample) 1974-09-16 1975-09-13

Country Status (5)

Country Link
JP (1) JPS5238388B2 (enExample)
CA (1) CA1061225A (enExample)
DE (1) DE2540053C2 (enExample)
FR (1) FR2284982A1 (enExample)
GB (1) GB1515318A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236471A (ja) * 1984-05-10 1985-11-25 新光電気工業株式会社 気密ガラス端子

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742008Y2 (enExample) * 1976-10-08 1982-09-16
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices
FR2479278A1 (fr) * 1980-03-26 1981-10-02 Loic Henry Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede
JP2662318B2 (ja) * 1991-03-13 1997-10-08 株式会社日立製作所 半導体基体への不純物の拡散方法
WO2023121228A1 (ko) * 2021-12-20 2023-06-29 주식회사 에이치피에스피 웨이퍼의 박막에 대한 탄소 도핑 방법
CN114855261B (zh) * 2022-03-21 2025-01-24 西北工业大学 一种基于水平梯度凝固法生长化合物半导体单晶的气相掺杂方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2178751B1 (enExample) * 1972-04-05 1974-10-18 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236471A (ja) * 1984-05-10 1985-11-25 新光電気工業株式会社 気密ガラス端子

Also Published As

Publication number Publication date
DE2540053A1 (de) 1976-03-25
GB1515318A (en) 1978-06-21
FR2284982A1 (fr) 1976-04-09
FR2284982B1 (enExample) 1979-02-16
CA1061225A (en) 1979-08-28
JPS5164371A (enExample) 1976-06-03
DE2540053C2 (de) 1983-12-01

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