GB1494149A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1494149A
GB1494149A GB49938/75A GB4993875A GB1494149A GB 1494149 A GB1494149 A GB 1494149A GB 49938/75 A GB49938/75 A GB 49938/75A GB 4993875 A GB4993875 A GB 4993875A GB 1494149 A GB1494149 A GB 1494149A
Authority
GB
United Kingdom
Prior art keywords
zone
emitter
diffusing
impurity
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49938/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1494149A publication Critical patent/GB1494149A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/461—Inverted vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB49938/75A 1975-02-19 1975-12-05 Integrated circuits Expired GB1494149A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2507038A DE2507038C3 (de) 1975-02-19 1975-02-19 Inverser Planartransistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
GB1494149A true GB1494149A (en) 1977-12-07

Family

ID=5939232

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49938/75A Expired GB1494149A (en) 1975-02-19 1975-12-05 Integrated circuits

Country Status (5)

Country Link
JP (1) JPS51107779A (enExample)
DE (1) DE2507038C3 (enExample)
FR (1) FR2301925A1 (enExample)
GB (1) GB1494149A (enExample)
IT (1) IT1055197B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2532608C2 (de) * 1975-07-22 1982-09-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor
JPS5385182A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Iil type semiconductor device
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS6031107B2 (ja) * 1981-01-09 1985-07-20 株式会社日立製作所 半導体集積回路装置
JPS59158554A (ja) * 1983-02-27 1984-09-08 Rohm Co Ltd トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926752A (enExample) * 1972-07-06 1974-03-09
JPS5720711B2 (enExample) * 1974-07-09 1982-04-30
JPS5837699B2 (ja) * 1974-12-16 1983-08-18 三菱電機株式会社 ハンドウタイキオクソウチ

Also Published As

Publication number Publication date
DE2507038B2 (de) 1979-05-23
FR2301925A1 (fr) 1976-09-17
JPS51107779A (enExample) 1976-09-24
IT1055197B (it) 1981-12-21
FR2301925B1 (enExample) 1982-03-19
DE2507038A1 (de) 1976-09-02
DE2507038C3 (de) 1980-01-24

Similar Documents

Publication Publication Date Title
GB1498531A (en) Semiconductor integrated injection logic cell
JPS5522840A (en) Semiconductor switching element and manufacturing method thereof
GB1485540A (en) Integrated circuits
GB1263127A (en) Integrated circuits
GB1468131A (en) Method of doping a semiconductor body
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1494149A (en) Integrated circuits
JPS645070A (en) Vertical insulated gate field effect transistor
GB1502229A (en) Inverselyoperated planar transistors
JPS55165669A (en) Bipolar-mos device
GB1476555A (en) Junction isolated bipolar integrated circuit device and method of manufacture thereof
JPS645063A (en) Hetero-junction bipolar transistor
JPS6481351A (en) Manufacture of semiconductor device
FR2347777A1 (fr) Procede simplifie de fabrication de transistors complementaires et structures ainsi obtenues
JPS5529175A (en) Planar type transistor
GB1414066A (en) Junction transistors
KR920017270A (ko) 다결정 실리콘 사이드 월(side wall)을 이용한 Laterally Graded Emitter(LGE)구조의 바이폴라 트랜지스터 제조방법
JPS6446972A (en) Semiconductor device
JPS6439061A (en) Heterojunction bipolar transistor
JPS61263149A (ja) 半導体装置の製造方法
JPS57128954A (en) Iil semiconductor device
JPS6468975A (en) Manufacture of junction fet
JPS6415963A (en) Semiconductor integrated circuit
JPS55143064A (en) Semiconductor device
JPS57120365A (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee