JPS55143064A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55143064A
JPS55143064A JP5104579A JP5104579A JPS55143064A JP S55143064 A JPS55143064 A JP S55143064A JP 5104579 A JP5104579 A JP 5104579A JP 5104579 A JP5104579 A JP 5104579A JP S55143064 A JPS55143064 A JP S55143064A
Authority
JP
Japan
Prior art keywords
region
collector
type
transistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5104579A
Other languages
Japanese (ja)
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5104579A priority Critical patent/JPS55143064A/en
Publication of JPS55143064A publication Critical patent/JPS55143064A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a triple diffusion-type pnp-trsnsistor which has a large gain- bandwidth product fr and a small collector saturation voltage by a method wherein a current path region which has low resistance is formed in a collector region and if necessary a high concentrated connection region is provided also in a base region. CONSTITUTION:A high concentrated collector wall 10 is formed in a collector region 3 to extend to a p<+>-buried layer 4. The collector wall 10 is formed at the same time when diffusion of a p-type insulating isolation layer 5 is performed. Next thereto for a ohmic connection of a pnp-transistor's base an n<+>-layer 9 is formed at the same time when formation of an emitter region 1 of an npn-transistor is done, since wiring is performed with Al and Al is p-type dopant and ohmic contact can be hardly attained in an n-type impurity layer 2. By this construction a collector series resistance is surely reduced, and furthermore an ohmic contact of a base region is made to be perfect, the triple diffusion-type transistor which has large ft is obtained.
JP5104579A 1979-04-24 1979-04-24 Semiconductor device Pending JPS55143064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5104579A JPS55143064A (en) 1979-04-24 1979-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5104579A JPS55143064A (en) 1979-04-24 1979-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55143064A true JPS55143064A (en) 1980-11-08

Family

ID=12875824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5104579A Pending JPS55143064A (en) 1979-04-24 1979-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55143064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310161A (en) * 1987-06-12 1988-12-19 Toshiba Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157172A (en) * 1974-09-19 1976-05-19 Western Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157172A (en) * 1974-09-19 1976-05-19 Western Electric Co

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310161A (en) * 1987-06-12 1988-12-19 Toshiba Corp Semiconductor device

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