GB1442930A - Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals - Google Patents
Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystalsInfo
- Publication number
- GB1442930A GB1442930A GB3955974A GB3955974A GB1442930A GB 1442930 A GB1442930 A GB 1442930A GB 3955974 A GB3955974 A GB 3955974A GB 3955974 A GB3955974 A GB 3955974A GB 1442930 A GB1442930 A GB 1442930A
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacture
- shaped
- conductive silicon
- gallium
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2407697A DE2407697C3 (de) | 1974-02-18 | 1974-02-18 | Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1442930A true GB1442930A (en) | 1976-07-14 |
Family
ID=5907718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3955974A Expired GB1442930A (en) | 1974-02-18 | 1974-09-11 | Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals |
Country Status (12)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
-
1974
- 1974-02-18 DE DE2407697A patent/DE2407697C3/de not_active Expired
- 1974-06-21 BE BE145761A patent/BE816719A/xx unknown
- 1974-08-09 NL NL7410745A patent/NL7410745A/xx not_active Application Discontinuation
- 1974-08-14 AT AT667874A patent/AT339379B/de active
- 1974-09-11 GB GB3955974A patent/GB1442930A/en not_active Expired
- 1974-09-25 PL PL1974174329A patent/PL91842B1/pl unknown
- 1974-10-02 ZA ZA00746269A patent/ZA746269B/xx unknown
- 1974-12-17 DK DK658274A patent/DK658274A/da unknown
-
1975
- 1975-02-11 IT IT20138/75A patent/IT1031627B/it active
- 1975-02-12 JP JP1777675A patent/JPS5329572B2/ja not_active Expired
- 1975-02-17 SU SU752106377A patent/SU717999A3/ru active
- 1975-02-17 FR FR7504804A patent/FR2261055B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
| US10361306B2 (en) | 2016-07-20 | 2019-07-23 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
Also Published As
| Publication number | Publication date |
|---|---|
| ATA667874A (de) | 1977-02-15 |
| DE2407697B2 (de) | 1978-04-06 |
| NL7410745A (nl) | 1975-08-20 |
| IT1031627B (it) | 1979-05-10 |
| DE2407697C3 (de) | 1978-11-30 |
| BE816719A (fr) | 1974-10-16 |
| JPS50120253A (enrdf_load_stackoverflow) | 1975-09-20 |
| DK658274A (enrdf_load_stackoverflow) | 1975-10-27 |
| FR2261055B1 (enrdf_load_stackoverflow) | 1979-01-05 |
| JPS5329572B2 (enrdf_load_stackoverflow) | 1978-08-22 |
| DE2407697A1 (de) | 1975-09-18 |
| PL91842B1 (enrdf_load_stackoverflow) | 1977-03-31 |
| AT339379B (de) | 1977-10-10 |
| ZA746269B (en) | 1975-10-29 |
| FR2261055A1 (enrdf_load_stackoverflow) | 1975-09-12 |
| SU717999A3 (ru) | 1980-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |