JPS6257093B2 - - Google Patents

Info

Publication number
JPS6257093B2
JPS6257093B2 JP54145092A JP14509279A JPS6257093B2 JP S6257093 B2 JPS6257093 B2 JP S6257093B2 JP 54145092 A JP54145092 A JP 54145092A JP 14509279 A JP14509279 A JP 14509279A JP S6257093 B2 JPS6257093 B2 JP S6257093B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
type
impurity
impurities
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54145092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5669824A (en
Inventor
Masashi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14509279A priority Critical patent/JPS5669824A/ja
Publication of JPS5669824A publication Critical patent/JPS5669824A/ja
Publication of JPS6257093B2 publication Critical patent/JPS6257093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14509279A 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor Granted JPS5669824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14509279A JPS5669824A (en) 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14509279A JPS5669824A (en) 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5669824A JPS5669824A (en) 1981-06-11
JPS6257093B2 true JPS6257093B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=15377187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14509279A Granted JPS5669824A (en) 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5669824A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5561530B2 (ja) * 2010-03-31 2014-07-30 古河電気工業株式会社 窒化物半導体の炭素ドーピング方法、半導体素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2439430C2 (de) * 1974-08-16 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von homogen dotiertem Halbleitermaterial mit p-Leitfähigkeit

Also Published As

Publication number Publication date
JPS5669824A (en) 1981-06-11

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