JPS5669824A - Impurity-adding method for compound semiconductor - Google Patents

Impurity-adding method for compound semiconductor

Info

Publication number
JPS5669824A
JPS5669824A JP14509279A JP14509279A JPS5669824A JP S5669824 A JPS5669824 A JP S5669824A JP 14509279 A JP14509279 A JP 14509279A JP 14509279 A JP14509279 A JP 14509279A JP S5669824 A JPS5669824 A JP S5669824A
Authority
JP
Japan
Prior art keywords
compound semiconductor
generated
neuclear
irradiating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14509279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257093B2 (enrdf_load_stackoverflow
Inventor
Masashi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14509279A priority Critical patent/JPS5669824A/ja
Publication of JPS5669824A publication Critical patent/JPS5669824A/ja
Publication of JPS6257093B2 publication Critical patent/JPS6257093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14509279A 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor Granted JPS5669824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14509279A JPS5669824A (en) 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14509279A JPS5669824A (en) 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5669824A true JPS5669824A (en) 1981-06-11
JPS6257093B2 JPS6257093B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=15377187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14509279A Granted JPS5669824A (en) 1979-11-09 1979-11-09 Impurity-adding method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5669824A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216579A (ja) * 2010-03-31 2011-10-27 Advanced Power Device Research Association 窒化物半導体の炭素ドーピング方法、半導体素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144867A (en) * 1974-08-16 1976-04-16 Siemens Ag Ichonidoobusareta p gatahandotaizairyono seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144867A (en) * 1974-08-16 1976-04-16 Siemens Ag Ichonidoobusareta p gatahandotaizairyono seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216579A (ja) * 2010-03-31 2011-10-27 Advanced Power Device Research Association 窒化物半導体の炭素ドーピング方法、半導体素子の製造方法

Also Published As

Publication number Publication date
JPS6257093B2 (enrdf_load_stackoverflow) 1987-11-30

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