ZA746269B - Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals - Google Patents

Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals

Info

Publication number
ZA746269B
ZA746269B ZA00746269A ZA746269A ZA746269B ZA 746269 B ZA746269 B ZA 746269B ZA 00746269 A ZA00746269 A ZA 00746269A ZA 746269 A ZA746269 A ZA 746269A ZA 746269 B ZA746269 B ZA 746269B
Authority
ZA
South Africa
Prior art keywords
manufacutre
relating
conductive silicon
uniformly doped
silicon monocrystals
Prior art date
Application number
ZA00746269A
Other languages
English (en)
Inventor
J Martin
K Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ZA746269B publication Critical patent/ZA746269B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/261Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20Doping by irradiation with electromagnetic waves or by particle radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/405Orientations of crystalline planes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
ZA00746269A 1974-02-18 1974-10-02 Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals ZA746269B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2407697A DE2407697C3 (de) 1974-02-18 1974-02-18 Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls

Publications (1)

Publication Number Publication Date
ZA746269B true ZA746269B (en) 1975-10-29

Family

ID=5907718

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA00746269A ZA746269B (en) 1974-02-18 1974-10-02 Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals

Country Status (12)

Country Link
JP (1) JPS5329572B2 (enrdf_load_stackoverflow)
AT (1) AT339379B (enrdf_load_stackoverflow)
BE (1) BE816719A (enrdf_load_stackoverflow)
DE (1) DE2407697C3 (enrdf_load_stackoverflow)
DK (1) DK658274A (enrdf_load_stackoverflow)
FR (1) FR2261055B1 (enrdf_load_stackoverflow)
GB (1) GB1442930A (enrdf_load_stackoverflow)
IT (1) IT1031627B (enrdf_load_stackoverflow)
NL (1) NL7410745A (enrdf_load_stackoverflow)
PL (1) PL91842B1 (enrdf_load_stackoverflow)
SU (1) SU717999A3 (enrdf_load_stackoverflow)
ZA (1) ZA746269B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium

Also Published As

Publication number Publication date
ATA667874A (de) 1977-02-15
DE2407697B2 (de) 1978-04-06
NL7410745A (nl) 1975-08-20
IT1031627B (it) 1979-05-10
DE2407697C3 (de) 1978-11-30
BE816719A (fr) 1974-10-16
JPS50120253A (enrdf_load_stackoverflow) 1975-09-20
DK658274A (enrdf_load_stackoverflow) 1975-10-27
FR2261055B1 (enrdf_load_stackoverflow) 1979-01-05
JPS5329572B2 (enrdf_load_stackoverflow) 1978-08-22
DE2407697A1 (de) 1975-09-18
PL91842B1 (enrdf_load_stackoverflow) 1977-03-31
GB1442930A (en) 1976-07-14
AT339379B (de) 1977-10-10
FR2261055A1 (enrdf_load_stackoverflow) 1975-09-12
SU717999A3 (ru) 1980-02-25

Similar Documents

Publication Publication Date Title
HK9582A (en) Improvements in or relation to the fabrication of semoconductor device
NZ177812A (en) Doating glass with silicon
MY8000165A (en) Semiconductor structures and methods of making them
JPS54122985A (en) Semiconductor
HK47280A (en) Improvements in or relating to the manufacture of transistor structures
ZA752089B (en) Improvements in or relating to mixing devices
JPS5384944A (en) Preparation of betaacycloohomocitral
MY8200018A (en) Improvements in or relating to semiconductor devices
HK34976A (en) Improvements in or relating to semiconductive devices
KE2935A (en) Preparation of alpha-6-deoxy-5-hydroxytetracycline
ZA746269B (en) Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals
ZA746058B (en) Improvements in or relating to the retreading of tyress
IT1049377B (it) Dispositivo per preparare monocristalli secondo verneuil
JPS5126235A (en) Budooto to katooganjusuru ekiseigongobutsu no shorihoho
JPS5265661A (en) Method of making silicon single crystal doped in nntype
JPS5329665A (en) Method of selectively doping aluminum impurity to silicon substrate
CA965689A (en) Doping of silicon crystals
ZA75471B (en) Preparation of dithiodianilines
ZA755457B (en) Improvements relating to tents
JPS51125221A (en) Preparation of ethynylbenzenes
AU7835075A (en) Preparation of cis-vincamine
ZA754328B (en) Improvements in or relating to semiconductor components
IL48634A0 (en) The preparation of chlorothiazoles and certain such novel compounds
ZA744920B (en) Improvements in the treatment of barytes
IT1039540B (it) Procedimento per preparare poliu retani in presenza di bisdimenti lamminoesil 6 metilammina