GB1243890A - Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal - Google Patents

Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal

Info

Publication number
GB1243890A
GB1243890A GB40381/69A GB4038169A GB1243890A GB 1243890 A GB1243890 A GB 1243890A GB 40381/69 A GB40381/69 A GB 40381/69A GB 4038169 A GB4038169 A GB 4038169A GB 1243890 A GB1243890 A GB 1243890A
Authority
GB
United Kingdom
Prior art keywords
epitaxial deposition
relating
crystal
inorganic material
silicon crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40381/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769968 external-priority patent/DE1769968C3/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1243890A publication Critical patent/GB1243890A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • H10P14/2905—
    • H10P14/3602—

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
GB40381/69A 1968-08-14 1969-08-13 Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal Expired GB1243890A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769968 DE1769968C3 (de) 1968-08-14 Verfahren zum epitaktischen Abscheiden von anorganischem Material auf der gereinigten Oberfläche eines SiIiciumkristalls

Publications (1)

Publication Number Publication Date
GB1243890A true GB1243890A (en) 1971-08-25

Family

ID=5700349

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40381/69A Expired GB1243890A (en) 1968-08-14 1969-08-13 Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal

Country Status (7)

Country Link
AT (1) AT286935B (enExample)
CA (1) CA918549A (enExample)
CH (1) CH516649A (enExample)
FR (1) FR2016937A1 (enExample)
GB (1) GB1243890A (enExample)
NL (1) NL6911771A (enExample)
SE (1) SE348950B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Also Published As

Publication number Publication date
CA918549A (en) 1973-01-09
DE1769968B2 (de) 1976-06-10
AT286935B (de) 1970-12-28
FR2016937A1 (enExample) 1970-05-15
CH516649A (de) 1971-12-15
SE348950B (enExample) 1972-09-18
NL6911771A (enExample) 1970-02-17
DE1769968A1 (de) 1971-11-04

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