GB1243890A - Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal - Google Patents

Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal

Info

Publication number
GB1243890A
GB1243890A GB40381/69A GB4038169A GB1243890A GB 1243890 A GB1243890 A GB 1243890A GB 40381/69 A GB40381/69 A GB 40381/69A GB 4038169 A GB4038169 A GB 4038169A GB 1243890 A GB1243890 A GB 1243890A
Authority
GB
United Kingdom
Prior art keywords
epitaxial deposition
relating
crystal
inorganic material
silicon crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40381/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769968 external-priority patent/DE1769968C3/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1243890A publication Critical patent/GB1243890A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning

Landscapes

  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
GB40381/69A 1968-08-14 1969-08-13 Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal Expired GB1243890A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769968 DE1769968C3 (de) 1968-08-14 Verfahren zum epitaktischen Abscheiden von anorganischem Material auf der gereinigten Oberfläche eines SiIiciumkristalls

Publications (1)

Publication Number Publication Date
GB1243890A true GB1243890A (en) 1971-08-25

Family

ID=5700349

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40381/69A Expired GB1243890A (en) 1968-08-14 1969-08-13 Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal

Country Status (7)

Country Link
AT (1) AT286935B (enExample)
CA (1) CA918549A (enExample)
CH (1) CH516649A (enExample)
FR (1) FR2016937A1 (enExample)
GB (1) GB1243890A (enExample)
NL (1) NL6911771A (enExample)
SE (1) SE348950B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Also Published As

Publication number Publication date
NL6911771A (enExample) 1970-02-17
DE1769968A1 (de) 1971-11-04
SE348950B (enExample) 1972-09-18
CH516649A (de) 1971-12-15
CA918549A (en) 1973-01-09
AT286935B (de) 1970-12-28
FR2016937A1 (enExample) 1970-05-15
DE1769968B2 (de) 1976-06-10

Similar Documents

Publication Publication Date Title
GB1130138A (en) Improvements in semi-conductor devices
GB1147412A (en) Process of producing oxide films on substrates
GB1206468A (en) Method of manufacturing silicon nitride powder
GB1243890A (en) Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal
JPS51134071A (en) Method to eliminate crystal defects of silicon
HK35876A (en) Improvements in or relating to a process for etching silicon nitride
GB1305454A (enExample)
GB853365A (en) Improvements in or relating to silicon carbide semiconductor devices
GB1051451A (enExample)
GB1449789A (en) Method of growing pyrolytic silicon dioxide layers
GB1142106A (en) A solder for germanium-silicon alloys
JPS5687339A (en) Manufacture of semiconductor device
GB1232727A (enExample)
GB1336189A (en) Manufacture of silicon monocrystals
GB1243295A (en) Improvements in or relating to the production of thin monocrystalline semiconductor layers
GB1386900A (en) Semiconductor layers
JPS53129981A (en) Production of semiconductor device
JPS5244584A (en) Method of treating semiconductor substrate
Vavilov et al. Influence of the Irradiation Temperature and of the Nature of Dopant on the Formation of Defects in n-Type Electron-Irradiated Si
Panteleev Effect of Impurity Atom Size on Diffusion Along Dislocations in Si
PILECKI Concentrations of complexes consisting of dislocations and vacancy colonies in the process of metal fatigue(Crystal dislocations and vacancy colonies complexes generation, discussing metal fatigue microcracks mechanism)
JPS5232000A (en) Process of silicon nitride thin film
GB1014288A (en) A process for the production of a doped zone in a body of semi-conductor material
GB1315923A (en) Process for doping silicon dioxide layers
GB1312884A (en) Zone refining process