FR2016937A1 - - Google Patents

Info

Publication number
FR2016937A1
FR2016937A1 FR6926838A FR6926838A FR2016937A1 FR 2016937 A1 FR2016937 A1 FR 2016937A1 FR 6926838 A FR6926838 A FR 6926838A FR 6926838 A FR6926838 A FR 6926838A FR 2016937 A1 FR2016937 A1 FR 2016937A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6926838A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769968 external-priority patent/DE1769968C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2016937A1 publication Critical patent/FR2016937A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning
FR6926838A 1968-08-14 1969-08-05 Withdrawn FR2016937A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769968 DE1769968C3 (de) 1968-08-14 Verfahren zum epitaktischen Abscheiden von anorganischem Material auf der gereinigten Oberfläche eines SiIiciumkristalls

Publications (1)

Publication Number Publication Date
FR2016937A1 true FR2016937A1 (enExample) 1970-05-15

Family

ID=5700349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6926838A Withdrawn FR2016937A1 (enExample) 1968-08-14 1969-08-05

Country Status (7)

Country Link
AT (1) AT286935B (enExample)
CA (1) CA918549A (enExample)
CH (1) CH516649A (enExample)
FR (1) FR2016937A1 (enExample)
GB (1) GB1243890A (enExample)
NL (1) NL6911771A (enExample)
SE (1) SE348950B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2325190A1 (fr) * 1975-09-22 1977-04-15 Signetics Corp Procede pour diminuer la densite de defauts cristallins dans un circuit integre

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2325190A1 (fr) * 1975-09-22 1977-04-15 Signetics Corp Procede pour diminuer la densite de defauts cristallins dans un circuit integre

Also Published As

Publication number Publication date
NL6911771A (enExample) 1970-02-17
DE1769968A1 (de) 1971-11-04
SE348950B (enExample) 1972-09-18
CH516649A (de) 1971-12-15
CA918549A (en) 1973-01-09
AT286935B (de) 1970-12-28
GB1243890A (en) 1971-08-25
DE1769968B2 (de) 1976-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse