GB1034503A - Improvements in or relating to the production of crystalline material - Google Patents

Improvements in or relating to the production of crystalline material

Info

Publication number
GB1034503A
GB1034503A GB19029/63A GB1902963A GB1034503A GB 1034503 A GB1034503 A GB 1034503A GB 19029/63 A GB19029/63 A GB 19029/63A GB 1902963 A GB1902963 A GB 1902963A GB 1034503 A GB1034503 A GB 1034503A
Authority
GB
United Kingdom
Prior art keywords
zone
passage
silicon
forming
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19029/63A
Other languages
English (en)
Inventor
Donald Thomas James Hurle
John Brian Mullin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Priority to GB19029/63A priority Critical patent/GB1034503A/en
Priority to FR974393A priority patent/FR1397605A/fr
Priority to NL6405390A priority patent/NL6405390A/xx
Priority to US367503A priority patent/US3378409A/en
Priority to DEL47808A priority patent/DE1298085B/de
Publication of GB1034503A publication Critical patent/GB1034503A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB19029/63A 1963-05-14 1963-05-14 Improvements in or relating to the production of crystalline material Expired GB1034503A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB19029/63A GB1034503A (en) 1963-05-14 1963-05-14 Improvements in or relating to the production of crystalline material
FR974393A FR1397605A (fr) 1963-05-14 1964-05-13 Perfectionnements à la production de matières cristallines
NL6405390A NL6405390A (enExample) 1963-05-14 1964-05-14
US367503A US3378409A (en) 1963-05-14 1964-05-14 Production of crystalline material
DEL47808A DE1298085B (de) 1963-05-14 1964-05-14 Verfahren zur Herstellung von Einkristallen hoher Kristallguete durch Zonenschmelzen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19029/63A GB1034503A (en) 1963-05-14 1963-05-14 Improvements in or relating to the production of crystalline material

Publications (1)

Publication Number Publication Date
GB1034503A true GB1034503A (en) 1966-06-29

Family

ID=10122567

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19029/63A Expired GB1034503A (en) 1963-05-14 1963-05-14 Improvements in or relating to the production of crystalline material

Country Status (5)

Country Link
US (1) US3378409A (enExample)
DE (1) DE1298085B (enExample)
FR (1) FR1397605A (enExample)
GB (1) GB1034503A (enExample)
NL (1) NL6405390A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095143A (en) * 1964-03-31 1967-12-13 Nat Res Dev Improvements in or relating to the production of single crystal material
US3935058A (en) * 1971-07-15 1976-01-27 Preussag Aktiengesellschaft Zone melting process
SE372753B (enExample) * 1972-08-04 1975-01-13 Boliden Ab
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
GB2090465B (en) * 1980-12-29 1985-11-13 Gen Electric Production of p-n junctions by the electromigration method
US4549912A (en) * 1981-06-11 1985-10-29 General Electric Company Anode and cathode connections for the practice of electromigration
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
US4534100A (en) * 1982-06-28 1985-08-13 The United States Of America As Represented By The Secretary Of The Air Force Electrical method of making conductive paths in silicon
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4775443A (en) * 1986-02-06 1988-10-04 Bleil Carl E Method and apparatus for zone regrowth of crystal ribbons from bulk material
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Sumco 単結晶の引上げ方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT189229B (de) * 1954-06-24 1957-03-11 Western Electric Co Verfahren zur Erzeugung zumindest einer in einem Körper fortschreitenden Zwischenfläche von fester und flüssiger Phase
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US3046164A (en) * 1955-10-18 1962-07-24 Honeywell Regulator Co Metal purification procedures
DE1074273B (de) * 1956-12-27 1960-01-28 Western Electric Company Incorporated New York N Y (V St A) (V St A) I Verfahren zum Zonenschmelzen elektrisch leitender Korper durch unmittelbares galvanisches Erwarmen
BE562932A (enExample) * 1957-01-23
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US2996456A (en) * 1958-09-08 1961-08-15 Transitron Electronic Corp Method of growing silicon carbide crystals
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process

Also Published As

Publication number Publication date
FR1397605A (fr) 1965-04-30
DE1298085B (de) 1969-06-26
US3378409A (en) 1968-04-16
NL6405390A (enExample) 1964-11-16

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