FR2358021A1 - Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide - Google Patents

Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide

Info

Publication number
FR2358021A1
FR2358021A1 FR7621107A FR7621107A FR2358021A1 FR 2358021 A1 FR2358021 A1 FR 2358021A1 FR 7621107 A FR7621107 A FR 7621107A FR 7621107 A FR7621107 A FR 7621107A FR 2358021 A1 FR2358021 A1 FR 2358021A1
Authority
FR
France
Prior art keywords
semiconductor
liquid phase
epitaxic
deposit process
electric polarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7621107A
Other languages
English (en)
Other versions
FR2358021B1 (fr
Inventor
Elie Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7621107A priority Critical patent/FR2358021A1/fr
Priority to DE2728771A priority patent/DE2728771C2/de
Priority to US05/812,262 priority patent/US4133705A/en
Priority to GB28294/77A priority patent/GB1581457A/en
Priority to JP8004577A priority patent/JPS538563A/ja
Publication of FR2358021A1 publication Critical patent/FR2358021A1/fr
Application granted granted Critical
Publication of FR2358021B1 publication Critical patent/FR2358021B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/103—Current controlled or induced growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Procédé de dépôt épitaxique d'un semi-conducteur, par polarisation électrique d'une phase liquide à température constante. En dehors du temps de croissance, la polarisation est appliquée dans le sens du refroidissement par effet Peltier, avec une densité de courant inférieure au seuil provoquant la croissance et proche de ce dernier. Application aux interfaces d'hétérostructures III-V.
FR7621107A 1976-07-09 1976-07-09 Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide Granted FR2358021A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7621107A FR2358021A1 (fr) 1976-07-09 1976-07-09 Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
DE2728771A DE2728771C2 (de) 1976-07-09 1977-06-25 Verfahren zur epitaktischen Ablagerung einer Schicht aus Verbindungshalbleitermaterial
US05/812,262 US4133705A (en) 1976-07-09 1977-07-01 Method for the epitaxial deposition of a semiconductor material by electrical polarization of a liquid phase at constant temperature
GB28294/77A GB1581457A (en) 1976-07-09 1977-07-06 Method of epitaxially depositing a semiconductor material
JP8004577A JPS538563A (en) 1976-07-09 1977-07-06 Method of piling up epitaxial semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7621107A FR2358021A1 (fr) 1976-07-09 1976-07-09 Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide

Publications (2)

Publication Number Publication Date
FR2358021A1 true FR2358021A1 (fr) 1978-02-03
FR2358021B1 FR2358021B1 (fr) 1978-12-22

Family

ID=9175520

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7621107A Granted FR2358021A1 (fr) 1976-07-09 1976-07-09 Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide

Country Status (5)

Country Link
US (1) US4133705A (fr)
JP (1) JPS538563A (fr)
DE (1) DE2728771C2 (fr)
FR (1) FR2358021A1 (fr)
GB (1) GB1581457A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
US4549912A (en) * 1981-06-11 1985-10-29 General Electric Company Anode and cathode connections for the practice of electromigration
DE3479523D1 (en) * 1983-09-19 1989-09-28 Fujitsu Ltd Method for growing multicomponent compound semiconductor crystals
US6090651A (en) * 1999-11-05 2000-07-18 Lsi Logic Corporation Depletion free polysilicon gate electrodes
US11140838B2 (en) 2017-08-10 2021-10-12 Valmont Industries, Inc. System and method for variable rate, high speed irrigation control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
BE562932A (fr) * 1957-01-23
NL301226A (fr) * 1962-12-03
GB1034503A (en) * 1963-05-14 1966-06-29 Nat Res Dev Improvements in or relating to the production of crystalline material
US3411946A (en) * 1963-09-05 1968-11-19 Raytheon Co Process and apparatus for producing an intermetallic compound
US3752713A (en) * 1970-02-14 1973-08-14 Oki Electric Ind Co Ltd Method of manufacturing semiconductor elements by liquid phase epitaxial growing method
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
US3948692A (en) * 1974-06-24 1976-04-06 Lev Vasilievich Golubev Method of preparing multi-layer semiconductor hetero-structures on the basis of compounds AIII BV where AIII is a metal of group three and BV is a non-metal of group five
US3993511A (en) * 1975-05-30 1976-11-23 North American Philips Corporation High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
US4133705A (en) 1979-01-09
JPS538563A (en) 1978-01-26
DE2728771A1 (de) 1978-01-12
GB1581457A (en) 1980-12-17
DE2728771C2 (de) 1986-07-24
JPS5516532B2 (fr) 1980-05-02
FR2358021B1 (fr) 1978-12-22

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