FR2766617B1 - Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication - Google Patents

Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication

Info

Publication number
FR2766617B1
FR2766617B1 FR9808607A FR9808607A FR2766617B1 FR 2766617 B1 FR2766617 B1 FR 2766617B1 FR 9808607 A FR9808607 A FR 9808607A FR 9808607 A FR9808607 A FR 9808607A FR 2766617 B1 FR2766617 B1 FR 2766617B1
Authority
FR
France
Prior art keywords
chip
production
semiconductor device
multiple types
transistors formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9808607A
Other languages
English (en)
Other versions
FR2766617A1 (fr
Inventor
Shuichi Ueno
Yoshinori Okumura
Shigenobu Maeda
Shigeto Maegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2766617A1 publication Critical patent/FR2766617A1/fr
Application granted granted Critical
Publication of FR2766617B1 publication Critical patent/FR2766617B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9808607A 1997-03-05 1998-07-06 Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication Expired - Fee Related FR2766617B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9050312A JPH10247725A (ja) 1997-03-05 1997-03-05 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
FR2766617A1 FR2766617A1 (fr) 1999-01-29
FR2766617B1 true FR2766617B1 (fr) 2003-08-01

Family

ID=12855386

Family Applications (2)

Application Number Title Priority Date Filing Date
FR9712478A Expired - Fee Related FR2760566B1 (fr) 1997-03-05 1997-10-07 Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication
FR9808607A Expired - Fee Related FR2766617B1 (fr) 1997-03-05 1998-07-06 Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR9712478A Expired - Fee Related FR2760566B1 (fr) 1997-03-05 1997-10-07 Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication

Country Status (7)

Country Link
US (1) US6492690B2 (fr)
JP (1) JPH10247725A (fr)
KR (1) KR19980079317A (fr)
CN (1) CN1162912C (fr)
DE (1) DE19745249A1 (fr)
FR (2) FR2760566B1 (fr)
TW (1) TW344899B (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4199338B2 (ja) 1998-10-02 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
KR100513445B1 (ko) * 1999-09-10 2005-09-07 삼성전자주식회사 반도체 장치의 제조방법
JP2001110908A (ja) * 1999-10-06 2001-04-20 Nec Corp 半導体装置及びその製造方法
JP4823408B2 (ja) 2000-06-08 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US6649543B1 (en) 2000-06-22 2003-11-18 Micron Technology, Inc. Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices
US6833329B1 (en) 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6956757B2 (en) 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6686298B1 (en) 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6660657B1 (en) 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
JP2002368144A (ja) * 2001-06-13 2002-12-20 Hitachi Ltd 不揮発性半導体記憶装置およびその製造方法
DE10209334A1 (de) * 2002-03-02 2003-10-09 Infineon Technologies Ag Füllverfahren für Mulden auf einer Halbleiterscheibe
US7112857B2 (en) * 2004-07-06 2006-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations
JP2006049365A (ja) * 2004-07-30 2006-02-16 Nec Electronics Corp 半導体装置
JP2006059880A (ja) * 2004-08-17 2006-03-02 Fujitsu Ltd 半導体装置及びその製造方法
KR100680488B1 (ko) * 2005-01-13 2007-02-08 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
US20060237778A1 (en) * 2005-04-22 2006-10-26 Mu-Yi Liu Non-volatile semiconductor memory cell and method of manufacturing the same
US7485528B2 (en) 2006-07-14 2009-02-03 Micron Technology, Inc. Method of forming memory devices by performing halogen ion implantation and diffusion processes
US8159895B2 (en) * 2006-08-17 2012-04-17 Broadcom Corporation Method and system for split threshold voltage programmable bitcells
JP4421629B2 (ja) * 2007-04-25 2010-02-24 株式会社東芝 半導体装置の製造方法
US7718496B2 (en) * 2007-10-30 2010-05-18 International Business Machines Corporation Techniques for enabling multiple Vt devices using high-K metal gate stacks
US7933133B2 (en) * 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
WO2011074407A1 (fr) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteur et procédé de fabrication associé
JP5778900B2 (ja) * 2010-08-20 2015-09-16 富士通セミコンダクター株式会社 半導体装置の製造方法
US9224475B2 (en) * 2012-08-23 2015-12-29 Sandisk Technologies Inc. Structures and methods for making NAND flash memory
JP5564588B2 (ja) * 2013-02-07 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
US9443862B1 (en) 2015-07-24 2016-09-13 Sandisk Technologies Llc Select gates with select gate dielectric first
US9613971B2 (en) 2015-07-24 2017-04-04 Sandisk Technologies Llc Select gates with central open areas
CN107026192B (zh) * 2016-02-02 2020-05-29 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法
CN116779615B (zh) * 2023-08-23 2023-11-07 合肥晶合集成电路股份有限公司 一种集成半导体器件及其制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249968A (en) * 1978-12-29 1981-02-10 International Business Machines Corporation Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4745079A (en) * 1987-03-30 1988-05-17 Motorola, Inc. Method for fabricating MOS transistors having gates with different work functions
US4912676A (en) * 1988-08-09 1990-03-27 Texas Instruments, Incorporated Erasable programmable memory
US4914046A (en) * 1989-02-03 1990-04-03 Motorola, Inc. Polycrystalline silicon device electrode and method
US5021356A (en) 1989-08-24 1991-06-04 Delco Electronics Corporation Method of making MOSFET depletion device
DE69006978T2 (de) * 1989-08-24 1994-06-09 Delco Electronics Corp MOSFET-Verarmungsanordnung.
JP2978345B2 (ja) * 1992-11-26 1999-11-15 三菱電機株式会社 半導体装置の製造方法
US5340764A (en) * 1993-02-19 1994-08-23 Atmel Corporation Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer
JPH06342881A (ja) 1993-06-02 1994-12-13 Toshiba Corp 半導体装置およびその製造方法
EP0639856A1 (fr) * 1993-08-20 1995-02-22 Texas Instruments Incorporated Méthode de dopage d'une couche de silicium polycristallin et dispositif semi-conducteur obtenu
JPH07263680A (ja) * 1994-03-24 1995-10-13 Hitachi Ltd 半導体装置の製造方法
JP3444687B2 (ja) * 1995-03-13 2003-09-08 三菱電機株式会社 不揮発性半導体記憶装置
US5480830A (en) * 1995-04-04 1996-01-02 Taiwan Semiconductor Manufacturing Company Ltd. Method of making depleted gate transistor for high voltage operation
JP3243151B2 (ja) * 1995-06-01 2002-01-07 東芝マイクロエレクトロニクス株式会社 半導体装置の製造方法
EP0751560B1 (fr) 1995-06-30 2002-11-27 STMicroelectronics S.r.l. Procédé pour la formation d'un circuit intégré contenant des cellules mémoires non-volatile et des transistors de flancs d'au moins deux types différents, et IC correspondant
US5753958A (en) * 1995-10-16 1998-05-19 Sun Microsystems, Inc. Back-biasing in asymmetric MOS devices
US5767558A (en) * 1996-05-10 1998-06-16 Integrated Device Technology, Inc. Structures for preventing gate oxide degradation

Also Published As

Publication number Publication date
FR2760566B1 (fr) 2002-08-16
FR2766617A1 (fr) 1999-01-29
CN1162912C (zh) 2004-08-18
KR19980079317A (ko) 1998-11-25
TW344899B (en) 1998-11-11
US20020130374A1 (en) 2002-09-19
DE19745249A1 (de) 1998-09-10
US6492690B2 (en) 2002-12-10
JPH10247725A (ja) 1998-09-14
FR2760566A1 (fr) 1998-09-11
CN1192586A (zh) 1998-09-09

Similar Documents

Publication Publication Date Title
FR2766617B1 (fr) Dispositif a semiconducteurs ayant plusieurs types de transistors formes dans une puce et procede pour sa fabrication
DE69730377D1 (de) Permanente Halbleiterspeicherzelle und deren Herstellungsverfahren
FR2798223B1 (fr) Dispositif a semiconducteur et procede de fabrication de celui-ci
DE69627252D1 (de) Halbleitersubstrat und Herstellungsverfahren
DE69935095D1 (de) Halbleiterbauelement und deren Herstellungsverfahren
DE60045088D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
FR2809867B1 (fr) Substrat fragilise et procede de fabrication d'un tel substrat
BR9902243B1 (pt) dispositivo biomédico e seu processo de fabricação.
DE69635397D1 (de) Halbleitervorrichtung mit Chipabmessungen und Herstellungsverfahren
DE69430513D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
FR2812764B1 (fr) Procede de fabrication d'un substrat de type substrat-sur- isolant ou substrat-sur-vide et dispositif obtenu
FR2586510B1 (fr) Module a semi-conducteurs ayant une grande aptitude au refroidissement et procede pour sa fabrication
IT1282087B1 (it) Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo
DE69831903D1 (de) Halbleiterbauelement mit Kondensator und deren Herstellungsmethode
FR2768836B1 (fr) Dispositif d'identification et procede de fabrication du dispositif associe
FR2787546B1 (fr) Element de vanne et procede pour le fabriquer
FR2732811B1 (fr) Memoire semi-conductrice a puce de surface reduite
FR2795838B1 (fr) Procede de securisation du traitement d'une information sensible dans un module de securite monolithique, et module de securite associe
FR2800147B1 (fr) Joint metallique statique et procede de fabrication
FR2776796B1 (fr) Procede de fabrication de cartes a puce
KR970004011A (ko) 반도체기억장치 및 그 제조방법
FR2818578B1 (fr) Procede de fabrication de structures en nid d'abeilles et outillage pour une telle fabrication
FR2764733B1 (fr) Transistor hyperfrequence a structure quasi-autoalignee et son procede de fabrication
FR2793331B1 (fr) Procede de fabrication d'une carte a microcircuit
FR2803109B1 (fr) Connecteur pour carte a microcircuit et procede de montage d'une telle carte dans ce connecteur

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100630