FR2752486A1 - Procede de fabrication d'une structure de condensateur pour un dispositif de memoire a semiconducteurs - Google Patents
Procede de fabrication d'une structure de condensateur pour un dispositif de memoire a semiconducteurs Download PDFInfo
- Publication number
- FR2752486A1 FR2752486A1 FR9705122A FR9705122A FR2752486A1 FR 2752486 A1 FR2752486 A1 FR 2752486A1 FR 9705122 A FR9705122 A FR 9705122A FR 9705122 A FR9705122 A FR 9705122A FR 2752486 A1 FR2752486 A1 FR 2752486A1
- Authority
- FR
- France
- Prior art keywords
- layer
- insulating layer
- conductive layer
- conductive
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000003990 capacitor Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000003860 storage Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000012546 transfer Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 641
- 230000004224 protection Effects 0.000 claims description 23
- 238000005498 polishing Methods 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 238000007521 mechanical polishing technique Methods 0.000 claims 1
- 230000015654 memory Effects 0.000 abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 116
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 71
- 239000000377 silicon dioxide Substances 0.000 description 39
- 235000012239 silicon dioxide Nutrition 0.000 description 37
- 230000008569 process Effects 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000000206 photolithography Methods 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- -1 phosphorus ions Chemical class 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 10
- 238000013500 data storage Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 241000208202 Linaceae Species 0.000 description 2
- 235000004431 Linum usitatissimum Nutrition 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000238876 Acari Species 0.000 description 1
- NYQDCVLCJXRDSK-UHFFFAOYSA-N Bromofos Chemical compound COP(=S)(OC)OC1=CC(Cl)=C(Br)C=C1Cl NYQDCVLCJXRDSK-UHFFFAOYSA-N 0.000 description 1
- 241000158147 Sator Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000003760 tallow Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085109995A TW306064B (en) | 1996-08-16 | 1996-08-16 | Semiconductor memory device with capacitor (part 6) |
| GB9701965A GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2752486A1 true FR2752486A1 (fr) | 1998-02-20 |
Family
ID=26310903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9705122A Pending FR2752486A1 (fr) | 1996-08-16 | 1997-04-25 | Procede de fabrication d'une structure de condensateur pour un dispositif de memoire a semiconducteurs |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH1079476A (de) |
| DE (1) | DE19720202C2 (de) |
| FR (1) | FR2752486A1 (de) |
| GB (1) | GB2321776A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100327123B1 (ko) | 1998-03-30 | 2002-08-24 | 삼성전자 주식회사 | 디램셀캐패시터의제조방법 |
| DE19942680A1 (de) * | 1999-09-07 | 2001-04-05 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung |
| JP6007499B2 (ja) * | 2012-02-06 | 2016-10-12 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び、電子機器 |
| US9490373B2 (en) | 2012-02-02 | 2016-11-08 | Sony Corporation | Solid-state imaging device and electronic apparatus with improved storage portion |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4323363A1 (de) * | 1992-07-15 | 1994-01-20 | Samsung Electronics Co Ltd | Verfahren zur Herstellung eines Kondensators für ein Halbleiterspeicherbauelement |
| JPH0786433A (ja) * | 1993-09-17 | 1995-03-31 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US5429980A (en) * | 1994-10-05 | 1995-07-04 | United Microelectronics Corporation | Method of forming a stacked capacitor using sidewall spacers and local oxidation |
| DE4408565A1 (de) * | 1994-01-12 | 1995-07-13 | Gold Star Electronics | Halbleiterspeichereinrichtung und Verfahren zu ihrer Herstellung |
| JPH0846154A (ja) * | 1994-08-03 | 1996-02-16 | Oki Electric Ind Co Ltd | 半導体記憶装置のキャパシタの蓄積電極の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
| KR960006718B1 (ko) * | 1992-12-31 | 1996-05-22 | 현대전자산업주식회사 | 반도체 기억장치의 커패시터 및 그 제조방법 |
| JP2820065B2 (ja) * | 1995-04-27 | 1998-11-05 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1997
- 1997-01-30 GB GB9701965A patent/GB2321776A/en not_active Withdrawn
- 1997-04-09 JP JP9091179A patent/JPH1079476A/ja active Pending
- 1997-04-25 FR FR9705122A patent/FR2752486A1/fr active Pending
- 1997-05-14 DE DE19720202A patent/DE19720202C2/de not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4323363A1 (de) * | 1992-07-15 | 1994-01-20 | Samsung Electronics Co Ltd | Verfahren zur Herstellung eines Kondensators für ein Halbleiterspeicherbauelement |
| JPH0786433A (ja) * | 1993-09-17 | 1995-03-31 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| DE4408565A1 (de) * | 1994-01-12 | 1995-07-13 | Gold Star Electronics | Halbleiterspeichereinrichtung und Verfahren zu ihrer Herstellung |
| JPH0846154A (ja) * | 1994-08-03 | 1996-02-16 | Oki Electric Ind Co Ltd | 半導体記憶装置のキャパシタの蓄積電極の製造方法 |
| US5429980A (en) * | 1994-10-05 | 1995-07-04 | United Microelectronics Corporation | Method of forming a stacked capacitor using sidewall spacers and local oxidation |
Non-Patent Citations (2)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 95, no. 6 31 July 1995 (1995-07-31) * |
| PATENT ABSTRACTS OF JAPAN vol. 96, no. 6 28 June 1996 (1996-06-28) * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1079476A (ja) | 1998-03-24 |
| GB2321776A (en) | 1998-08-05 |
| GB9701965D0 (en) | 1997-03-19 |
| DE19720202A1 (de) | 1998-02-19 |
| DE19720202C2 (de) | 2001-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2304794B1 (de) | Struktur und verfahren zur herstellung einer mikroelektronischen 3d-nand-flash-speichervorrichtung | |
| FR2717950A1 (fr) | Ligne de bit enterrée et cellule de porte cylindrique et procédé de fabrication de ces éléments. | |
| EP0258141B1 (de) | MIS integrierte Schaltung, wie eine EPROM-Speicherzelle, und Verfahren zu deren Herstellung | |
| FR2661555A1 (fr) | Procede pour fabriquer un reseau-memoire a semi-conducteurs avec des cellules du type a grille flottante et sans contact. | |
| US7465650B2 (en) | Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry | |
| KR20100015477A (ko) | 자체 정렬 다마신 메모리 구조를 제조하는 방법 | |
| FR2845203A1 (fr) | Transistor a effet de champ ayant de multiples canaux empiles et procede de fabrication | |
| EP0712163A1 (de) | Elektrisch löschbares nicht-flüchtiges Speicherbauteil und Verfahren zur Herstellung desselben | |
| FR2752488A1 (fr) | Dispositif de memoire a semiconducteurs ayant un condensateur de type en arbre | |
| US7629253B2 (en) | Method for implementing diffusion barrier in 3D memory | |
| EP0354858B1 (de) | Hochintegrierte EPROM-Speicheranordnung mit einem grossen Kopplungsfaktor | |
| FR3121780A1 (fr) | Cellule mémoire programmable et effaçable | |
| FR2752486A1 (fr) | Procede de fabrication d'une structure de condensateur pour un dispositif de memoire a semiconducteurs | |
| FR2485261A1 (fr) | Fabrication mos auto-alignee | |
| EP0190243A1 (de) | Verfahren zur herstellung einer integrierten schaltung vom mis-typ. | |
| US5811332A (en) | Method of fabricating a capacitor structure for a semiconductor memory device | |
| FR2830124A1 (fr) | Memoire vive | |
| FR2752493A1 (fr) | Dispositif de memoire a semiconducteurs ayant un condensateur du type en arbre | |
| FR2985592A1 (fr) | Procede de fabrication d'une cellule memoire non volatile a double grille | |
| FR2752494A1 (fr) | Dispositif de memoire a semiconducteurs et structure d'electrode de condensateur pour ce dispositif | |
| FR3105578A1 (fr) | Mémoire 3D et procédé de fabrication | |
| FR2752491A1 (fr) | Structure d'electrode de condensateur de stockage pour un dispositif de memoire | |
| FR2752483A1 (fr) | Procede de fabrication d'un dispositif de memoire a semiconducteurs ayant une structure de condensateur | |
| FR2778019A1 (fr) | Condensateur de cellule de memoire vive dynamique et son procede de fabrication | |
| FR2752487A1 (fr) | Procede de fabrication d'une electrode de condensateur pour un dispositif a semiconducteurs |