GB9701965D0 - Method of fabricating a capacitor structure for a semiconductor memory device - Google Patents
Method of fabricating a capacitor structure for a semiconductor memory deviceInfo
- Publication number
- GB9701965D0 GB9701965D0 GBGB9701965.7A GB9701965A GB9701965D0 GB 9701965 D0 GB9701965 D0 GB 9701965D0 GB 9701965 A GB9701965 A GB 9701965A GB 9701965 D0 GB9701965 D0 GB 9701965D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabricating
- memory device
- semiconductor memory
- capacitor structure
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9701965A GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
JP9091179A JPH1079476A (en) | 1996-08-16 | 1997-04-09 | Manufacture of capacitor structure of semiconductor memory device |
FR9705122A FR2752486A1 (en) | 1996-08-16 | 1997-04-25 | METHOD FOR MANUFACTURING A CAPACITOR STRUCTURE FOR A SEMICONDUCTOR MEMORY DEVICE |
DE19720202A DE19720202C2 (en) | 1996-08-16 | 1997-05-14 | Method of manufacturing a semiconductor memory device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085109995A TW306064B (en) | 1996-08-16 | 1996-08-16 | Semiconductor memory device with capacitor (part 6) |
GB9701965A GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9701965D0 true GB9701965D0 (en) | 1997-03-19 |
GB2321776A GB2321776A (en) | 1998-08-05 |
Family
ID=26310903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9701965A Withdrawn GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH1079476A (en) |
DE (1) | DE19720202C2 (en) |
FR (1) | FR2752486A1 (en) |
GB (1) | GB2321776A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100327123B1 (en) * | 1998-03-30 | 2002-08-24 | 삼성전자 주식회사 | A method of fabricating dram cell capacitor |
DE19942680A1 (en) * | 1999-09-07 | 2001-04-05 | Infineon Technologies Ag | Integrated circuit arrangement with at least one capacitor and method for its production |
US9490373B2 (en) | 2012-02-02 | 2016-11-08 | Sony Corporation | Solid-state imaging device and electronic apparatus with improved storage portion |
JP6007499B2 (en) * | 2012-02-06 | 2016-10-12 | ソニー株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
KR960008865B1 (en) * | 1992-07-15 | 1996-07-05 | Samsung Electronics Co Ltd | Method for manufacturing a capacitor in semiconductor memory device |
KR960006718B1 (en) * | 1992-12-31 | 1996-05-22 | 현대전자산업주식회사 | Memory capacitor in semiconductor device and the method for fabricating the same |
JP3085831B2 (en) * | 1993-09-17 | 2000-09-11 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
KR0140644B1 (en) * | 1994-01-12 | 1998-06-01 | 문정환 | Semiconductor memory device |
JPH0846154A (en) * | 1994-08-03 | 1996-02-16 | Oki Electric Ind Co Ltd | Method of forming storage electrode for capacitor of semiconductor memory |
US5429980A (en) * | 1994-10-05 | 1995-07-04 | United Microelectronics Corporation | Method of forming a stacked capacitor using sidewall spacers and local oxidation |
JP2820065B2 (en) * | 1995-04-27 | 1998-11-05 | 日本電気株式会社 | Method for manufacturing semiconductor device |
-
1997
- 1997-01-30 GB GB9701965A patent/GB2321776A/en not_active Withdrawn
- 1997-04-09 JP JP9091179A patent/JPH1079476A/en active Pending
- 1997-04-25 FR FR9705122A patent/FR2752486A1/en active Pending
- 1997-05-14 DE DE19720202A patent/DE19720202C2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH1079476A (en) | 1998-03-24 |
GB2321776A (en) | 1998-08-05 |
DE19720202C2 (en) | 2001-07-26 |
DE19720202A1 (en) | 1998-02-19 |
FR2752486A1 (en) | 1998-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |