GB2321776A - Method of fabricating a stacked capacitor - Google Patents
Method of fabricating a stacked capacitor Download PDFInfo
- Publication number
- GB2321776A GB2321776A GB9701965A GB9701965A GB2321776A GB 2321776 A GB2321776 A GB 2321776A GB 9701965 A GB9701965 A GB 9701965A GB 9701965 A GB9701965 A GB 9701965A GB 2321776 A GB2321776 A GB 2321776A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- insulating layer
- forming
- conductive layer
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 87
- 238000003860 storage Methods 0.000 claims description 60
- 238000000059 patterning Methods 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000007521 mechanical polishing technique Methods 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 112
- 229920005591 polysilicon Polymers 0.000 abstract description 112
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 60
- 235000012239 silicon dioxide Nutrition 0.000 description 38
- 239000000377 silicon dioxide Substances 0.000 description 38
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- -1 phosphorus ions Chemical class 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 10
- 238000013500 data storage Methods 0.000 description 10
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9701965A GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
| JP9091179A JPH1079476A (ja) | 1996-08-16 | 1997-04-09 | 半導体記憶装置のコンデンサ構造体の製造方法 |
| FR9705122A FR2752486A1 (fr) | 1996-08-16 | 1997-04-25 | Procede de fabrication d'une structure de condensateur pour un dispositif de memoire a semiconducteurs |
| DE19720202A DE19720202C2 (de) | 1996-08-16 | 1997-05-14 | Verfahren zur Herstellung einer Halbleiter-Speichervorrichtung |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085109995A TW306064B (en) | 1996-08-16 | 1996-08-16 | Semiconductor memory device with capacitor (part 6) |
| GB9701965A GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9701965D0 GB9701965D0 (en) | 1997-03-19 |
| GB2321776A true GB2321776A (en) | 1998-08-05 |
Family
ID=26310903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9701965A Withdrawn GB2321776A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH1079476A (de) |
| DE (1) | DE19720202C2 (de) |
| FR (1) | FR2752486A1 (de) |
| GB (1) | GB2321776A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2336033A (en) * | 1998-03-30 | 1999-10-06 | Samsung Electronics Co Ltd | Method of fabricating a DRAM cell capacitor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19942680A1 (de) * | 1999-09-07 | 2001-04-05 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung |
| US9490373B2 (en) | 2012-02-02 | 2016-11-08 | Sony Corporation | Solid-state imaging device and electronic apparatus with improved storage portion |
| JP6007499B2 (ja) * | 2012-02-06 | 2016-10-12 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び、電子機器 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
| US5372965A (en) * | 1992-12-31 | 1994-12-13 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating capacitor of semiconductor memory device |
| EP0740339A2 (de) * | 1995-04-27 | 1996-10-30 | Nec Corporation | Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960008865B1 (en) * | 1992-07-15 | 1996-07-05 | Samsung Electronics Co Ltd | Method for manufacturing a capacitor in semiconductor memory device |
| JP3085831B2 (ja) * | 1993-09-17 | 2000-09-11 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| KR0140644B1 (ko) * | 1994-01-12 | 1998-06-01 | 문정환 | 반도체 메모리장치 및 그 제조방법 |
| JPH0846154A (ja) * | 1994-08-03 | 1996-02-16 | Oki Electric Ind Co Ltd | 半導体記憶装置のキャパシタの蓄積電極の製造方法 |
| US5429980A (en) * | 1994-10-05 | 1995-07-04 | United Microelectronics Corporation | Method of forming a stacked capacitor using sidewall spacers and local oxidation |
-
1997
- 1997-01-30 GB GB9701965A patent/GB2321776A/en not_active Withdrawn
- 1997-04-09 JP JP9091179A patent/JPH1079476A/ja active Pending
- 1997-04-25 FR FR9705122A patent/FR2752486A1/fr active Pending
- 1997-05-14 DE DE19720202A patent/DE19720202C2/de not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
| US5372965A (en) * | 1992-12-31 | 1994-12-13 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating capacitor of semiconductor memory device |
| EP0740339A2 (de) * | 1995-04-27 | 1996-10-30 | Nec Corporation | Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2336033A (en) * | 1998-03-30 | 1999-10-06 | Samsung Electronics Co Ltd | Method of fabricating a DRAM cell capacitor |
| GB2336033B (en) * | 1998-03-30 | 2000-07-19 | Samsung Electronics Co Ltd | A method of fabricating a dram cell capacitor |
| US6168992B1 (en) | 1998-03-30 | 2001-01-02 | Samsung Electronics Co., Ltd. | Methods for forming electrodes including sacrificial layers |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2752486A1 (fr) | 1998-02-20 |
| DE19720202A1 (de) | 1998-02-19 |
| DE19720202C2 (de) | 2001-07-26 |
| GB9701965D0 (en) | 1997-03-19 |
| JPH1079476A (ja) | 1998-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |