FR2727791B1 - Dispositif a semi-conducteur optique et procede de fabrication de celui-ci - Google Patents

Dispositif a semi-conducteur optique et procede de fabrication de celui-ci

Info

Publication number
FR2727791B1
FR2727791B1 FR9512873A FR9512873A FR2727791B1 FR 2727791 B1 FR2727791 B1 FR 2727791B1 FR 9512873 A FR9512873 A FR 9512873A FR 9512873 A FR9512873 A FR 9512873A FR 2727791 B1 FR2727791 B1 FR 2727791B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9512873A
Other languages
English (en)
French (fr)
Other versions
FR2727791A1 (fr
Inventor
Yasunori Miyazaki
Eitaro Ishimura
Tatsuya Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2727791A1 publication Critical patent/FR2727791A1/fr
Application granted granted Critical
Publication of FR2727791B1 publication Critical patent/FR2727791B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR9512873A 1994-12-05 1995-10-31 Dispositif a semi-conducteur optique et procede de fabrication de celui-ci Expired - Lifetime FR2727791B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30064794A JP3386261B2 (ja) 1994-12-05 1994-12-05 光半導体装置、及びその製造方法

Publications (2)

Publication Number Publication Date
FR2727791A1 FR2727791A1 (fr) 1996-06-07
FR2727791B1 true FR2727791B1 (fr) 1997-12-12

Family

ID=17887381

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9512873A Expired - Lifetime FR2727791B1 (fr) 1994-12-05 1995-10-31 Dispositif a semi-conducteur optique et procede de fabrication de celui-ci

Country Status (4)

Country Link
US (1) US5717710A (ja)
JP (1) JP3386261B2 (ja)
DE (1) DE19545164B8 (ja)
FR (1) FR2727791B1 (ja)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
JPH1075009A (ja) * 1996-08-30 1998-03-17 Nec Corp 光半導体装置とその製造方法
JP2924852B2 (ja) * 1997-05-16 1999-07-26 日本電気株式会社 光半導体装置及びその製造方法
JP2000012975A (ja) * 1998-06-23 2000-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法
JP2000349394A (ja) * 1999-06-02 2000-12-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2001142037A (ja) * 1999-11-17 2001-05-25 Oki Electric Ind Co Ltd 電界効果型光変調器および半導体光素子の製造方法
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
KR100337704B1 (ko) * 2000-07-04 2002-05-22 윤종용 전계흡수형 변조기가 집적된 레이저 다이오드의 제조 방법
DE60136261D1 (de) 2001-01-18 2008-12-04 Avago Tech Fiber Ip Sg Pte Ltd Halbleiterbauelement mit Strombegrenzungstruktur
CN1307756C (zh) * 2001-03-30 2007-03-28 阿吉尔系统光电子学监护股份有限公司 光电子器件
US6717969B2 (en) * 2001-07-16 2004-04-06 Fuji Photo Film Co., Ltd. Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer
JP2003060311A (ja) * 2001-08-21 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及びその製造方法
JP3654435B2 (ja) * 2001-08-21 2005-06-02 日本電信電話株式会社 半導体光素子及びその製造方法
EP1300917A1 (en) * 2001-10-03 2003-04-09 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor device with current confinement structure
JP2003338664A (ja) * 2002-05-20 2003-11-28 Mitsubishi Electric Corp 半導体装置
EP1372229B1 (en) * 2002-06-12 2006-02-15 Agilent Technologies Inc., A Delaware Corporation Integrated semiconductor laser and waveguide device
EP1372228B1 (en) * 2002-06-12 2006-10-04 Agilent Technologies, Inc. - a Delaware corporation - Integrated semiconductor laser and waveguide device
US20050013337A1 (en) * 2003-05-30 2005-01-20 Thomas Jung Semiconductor injection locked lasers and method
KR100547830B1 (ko) * 2003-08-13 2006-01-31 삼성전자주식회사 집적광학장치 및 그 제조방법
JP2005340567A (ja) * 2004-05-28 2005-12-08 Fuji Xerox Co Ltd 表面発光型半導体レーザ素子およびその製造方法
JP4613304B2 (ja) * 2004-09-07 2011-01-19 独立行政法人産業技術総合研究所 量子ナノ構造半導体レーザ
JP4422597B2 (ja) * 2004-12-02 2010-02-24 富士通株式会社 半導体レーザ及びその製造方法
US7180648B2 (en) * 2005-06-13 2007-02-20 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
JP2007035784A (ja) * 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd 分布帰還型半導体レーザ
GB2430548B (en) * 2005-09-27 2011-08-10 Agilent Technologies Inc An integrated modulator-laser structure and a method of producing same
US20070070309A1 (en) * 2005-09-28 2007-03-29 Miklos Stern Color image projection arrangement and method employing electro-absorption modulated green laser system
JP4952376B2 (ja) * 2006-08-10 2012-06-13 三菱電機株式会社 光導波路と半導体光集積素子の製造方法
JP2008053649A (ja) * 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ
JP5151231B2 (ja) * 2007-04-23 2013-02-27 住友電気工業株式会社 半導体光素子及びその製造方法
US7539228B2 (en) * 2007-06-26 2009-05-26 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same
JP2009182249A (ja) * 2008-01-31 2009-08-13 Mitsubishi Electric Corp 半導体光素子の製造方法
JP2009283822A (ja) 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP2014063052A (ja) 2012-09-21 2014-04-10 Mitsubishi Electric Corp 光変調器の製造方法および光変調器
WO2020240644A1 (ja) * 2019-05-27 2020-12-03 三菱電機株式会社 光半導体装置および光半導体装置の製造方法
CN110098562B (zh) * 2019-06-04 2024-02-06 厦门市炬意科技有限公司 一种高速掩埋dfb半导体激光器及其制备方法
US11462886B2 (en) * 2019-08-09 2022-10-04 Lumentum Japan, Inc. Buried-type semiconductor optical device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371966A (en) * 1980-11-06 1983-02-01 Xerox Corporation Heterostructure lasers with combination active strip and passive waveguide strip
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
US4999315A (en) * 1984-06-15 1991-03-12 At&T Bell Laboratories Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
EP0314372A3 (en) * 1987-10-29 1989-10-25 AT&T Corp. Current confinement and blocking region for semiconductor devices
JP2890644B2 (ja) * 1990-04-03 1999-05-17 日本電気株式会社 集積型光変調器の製造方法
EP0573724B1 (en) * 1992-06-09 1995-09-13 International Business Machines Corporation Full-wafer processing of laser diodes with cleaved facets
JP2536714B2 (ja) * 1993-03-03 1996-09-18 日本電気株式会社 光変調器集積型多重量子井戸構造半導体レ―ザ素子
JPH0730185A (ja) * 1993-07-07 1995-01-31 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JPH0794833A (ja) * 1993-09-22 1995-04-07 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
US5548607A (en) * 1994-06-08 1996-08-20 Lucent Technologies, Inc. Article comprising an integrated laser/modulator combination

Also Published As

Publication number Publication date
DE19545164B8 (de) 2007-06-28
DE19545164B4 (de) 2007-02-08
US5717710A (en) 1998-02-10
JP3386261B2 (ja) 2003-03-17
FR2727791A1 (fr) 1996-06-07
DE19545164A1 (de) 1996-06-13
JPH08162701A (ja) 1996-06-21

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