US5717710A - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

Info

Publication number
US5717710A
US5717710A US08/558,791 US55879195A US5717710A US 5717710 A US5717710 A US 5717710A US 55879195 A US55879195 A US 55879195A US 5717710 A US5717710 A US 5717710A
Authority
US
United States
Prior art keywords
layer
semi
optical semiconductor
semiconductor device
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/558,791
Other languages
English (en)
Inventor
Yasunori Miyazaki
Eitaro Ishimura
Tatsuya Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Assigned to MITSUBISHI DENKI KABUSHIKI KAISHA reassignment MITSUBISHI DENKI KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHIMURA, EITARO, KIMURA, TATSUYA, MIYAZAKI, YASUNORI
Application granted granted Critical
Publication of US5717710A publication Critical patent/US5717710A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

Definitions

  • the present invention relates to an optical semiconductor device and a fabricating method thereof, and more particularly, to an integrated optical semiconductor device in which electrical element isolation can easily be achieved between optical semiconductor elements and which is capable of high speed operation and to a fabricating method thereof.
  • a distributed feedback (DFB) semiconductor laser is operated with direct current and light emitted from the laser undergoes high speed modulation by a light absorption modulator, which decreases wavelength chirping and is advantageous in high speed optical communications in contrast to direct modulation of the semiconductor laser.
  • DFB distributed feedback
  • FIG. 5 is a perspective view of the prior art optical semiconductor device, a portion of which is sectioned.
  • reference numeral 2 designates an n type InP substrate
  • reference numeral 3 designates a bottom surface electrode
  • reference numeral 4 designates a light absorption layer of the optical modulator
  • reference numeral 7 designates a top surface electrode
  • reference numeral 8 designates a semi-insulating Fe-doped InP layer
  • reference numeral 9 designates an n type InP hole blocking layer
  • reference numeral 11 designates an active layer of the DFB laser
  • reference numeral 12 designates a diffraction grating
  • reference numeral 14 designates a buried waveguide
  • reference numeral 35 designates a p type InP upper cladding layer
  • reference numeral 101 designates the DFB laser
  • reference numeral 102 designates the optical modulator.
  • the DFB laser is equipped with the diffraction grating 12 under the active layer which makes possible to steady laser emission at a single wavelength.
  • the active layer 11 of the DFB laser 101 and the light absorption layer 4 of the optical modulator 102 comprise a continuous InGaAs/InGaAsP multiple quantum well layer. Its thickness is large in the DFB laser and small in the optical modulator and the width of each quantum well included in this layer is also smaller in the optical modulator than in the DFB laser. Therefore, the energy difference between ground levels of the conduction band and the valence band inside the quantum well of the DFB laser is smaller than that in the optical modulator. Therefore, when no bias voltage is applied to the optical modulator, light from the DFB laser is not absorbed in the light absorption layer 4.
  • the light radiated from the DFB laser operated by a direct current can be modulated by changing the bias voltage applied to the optical modulator.
  • the semi-insulating Fe-doped InP layer 8 and the n type InP hole blocking layer 9 fill in both sides of the buried waveguide comprising the multiple quantum well layer and the InP cladding layers disposed above and below this multiple quantum well layer and act as a current blocking layer. This reduces the threshold current of the laser, improving the efficiency of the laser.
  • FIG. 6(a) is a cross-sectional view of the optical modulator of the prior art optical semiconductor device. Since Fe is a deep acceptor in InP, the semi-insulating Fe-doped InP layer 8 can block the diffusion of electrons from the n type InP substrate 2 and the n type InP hole blocking layer 9 can block the diffusion of holes from the p type InP upper cladding layer 35.
  • a schematic view of a cross-section when this optical semiconductor device is sectioned through a broken line 6b--6b in FIG. 6(a) along a plane parallel to the buried waveguide is shown in FIG. 6(b).
  • the interface between the n type InP hole blocking layer 9 and the p type InP upper cladding layer 35 is a pn junction interface, and the junction capacitance C 1 becomes too large to be ignored for high speed operation of the optical modulator.
  • the junction capacitance C 3 in the DFB laser also becomes as large as C 1 .
  • the capacitances C 2 and C 4 between the n type InP hole blocking layer 9 and the n type InP substrate 2 are sufficiently smaller than C 1 and C 3 because of the thick semi-insulating Fe-doped InP layer 8 between these layers. Since the mobility of electrons is considerably larger than that of holes in InP, the an electrical resistance of the n type InP hole blocking layer 9 is small.
  • the hole blocking layer 9 is continuous through the optical modulator and the DFB laser, there occurs mutual interference between the modulator and the DFB laser and the capacitance C 3 becomes associated with the capacitance C 1 , thereby increasing parasitic capacitance of the optical modulator and impeding modulation at high frequencies. This means that the modulation bandwidth is narrowed.
  • a portion 36 of the hole blocking layer 9 between the optical modulator 102 and the DFB laser 101 is etched away as shown in FIG. 6(b).
  • the fabricating method of the prior art optical semiconductor device will briefly be described. First, after forming the diffraction grating 12 in the DFB laser formation region of the n type InP substrate surface, two stripe shaped SiO 2 films (15 ⁇ m width, respectively) disposed on both sides of a region (10 ⁇ m width) which becomes the buried waveguide of the DFB laser formation region are formed. Next, InGaAs/InGaAsP multiple quantum well layer is selectively grown using metal organic chemical vapor deposition (hereinafter referred to as "MOCVD") on a region except the SiO 2 region.
  • MOCVD metal organic chemical vapor deposition
  • this multiple quantum well layer is formed, since the distance of 10 ⁇ m separating the two SiO 2 stripes is sufficiently smaller than the vapor phase diffusion length of 30-50 ⁇ m of materials forming a growing layer, the thickness of the multiple quantum well layer grown on the region between these SiO 2 stripes becomes larger than that of the same multiple quantum well layer grown on a region outside that region.
  • etching is performed so that the multiple quantum well layer is left only on the region between the SiO 2 stripes and on a region adjacent that region, where the optical modulator is formed, thereby forming the buried waveguide.
  • a portion of the n type InP hole blocking layer 9 between the DFB laser and the optical modulator is etched away.
  • the selective growth mask on the buried waveguide is removed, and the p type InP upper cladding layer 35 is grown on the entire surface as shown in FIG. 7.
  • reference numeral 36 indicates the portion where the n type InP hole blocking layer 9 was removed.
  • Reference numeral 37 designates the buried waveguide region, where the hole blocking layer was not formed from the beginning.
  • mesa etching for element isolation is performed and the top surface and the bottom surface electrodes are formed, thereby completing the optical semiconductor device illustrated in FIG. 5.
  • the etching of the hole blocking layer is performed after a region, except the region to be etched, is masked with a resist in a photolithography process.
  • a certain amount of contamination is left on the surface of the hole blocking layer. This degrades the crystallinity of the p type InP upper cladding layer which is grown on this surface.
  • an optical semiconductor device has burying semiconductor layers disposed on both sides of a buried waveguide which serves for each of a plurality of optical semiconductor elements that are formed on a semiconductor substrate, and forming a continuous layer extending through the plural optical semiconductor elements.
  • the burying semiconductor layer comprises a single pair of or a plurality of pairs of semiconductor layers laminated on a semi-insulating semiconductor layer, the one pair of the laminated layers comprising a carrier blocking layer comprising semiconductor of the same conductivity type as that of the semiconductor substrate, and a semi-insulating semiconductor layer formed on the carrier blocking layer.
  • the semi-insulating semiconductor layer is disposed between the carrier blocking layer and an upper cladding layer which is usually formed on the buried waveguide and the carrier blocking layer and comprises semiconductor of a conductivity type opposite to that of the semiconductor substrate, whereby the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than that of the prior art optical semiconductor device having a pn junction formed by those two layers. Therefore, a mutual interference between optical semiconductor devices through the carrier blocking layer is reduced, and the parasitic capacitance of the device is also reduced, thereby enabling the device operating up to a higher frequency than in the prior art.
  • the semi-insulating semiconductor layer is disposed between the carrier blocking layer and an upper cladding layer which is usually formed on the buried waveguide and the carrier blocking layer and comprises semiconductor of a conductivity type opposite to that of the semiconductor substrate, whereby the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than that of the prior art optical semiconductor device having a pn junction formed by those two layers. Therefore, a mutual interference between optical semiconductor devices through the carrier blocking layer is reduced, and the parasitic capacitance of the device is also reduced, thereby enabling the device operating up to a higher frequency than in the prior art.
  • the semi-insulating semiconductor layer comprises InP doped with Fe and the conductivity type of semiconductor forming the carrier blocking layer is n type. Therefore, the InP layer which is semi-insulating due to including Fe which serves as a deep acceptor is disposed between the carrier blocking layer and an upper cladding layer which comprises p type semiconductor which is a conductivity type opposite to that of the semiconductor substrate, whereby the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than the prior art optical semiconductor device having a pn junction formed by those two layers.
  • the semi-insulating semiconductor layer comprises InP doped with Ti and the conductivity type of semiconductor forming the carrier blocking layer is n type. Therefore, the InP layer which is semi-insulating due to including Ti serving as a deep acceptor is disposed between the carrier blocking layer and an upper cladding layer which is usually formed on the buried waveguide and the carrier blocking layer and comprises p type semiconductor which is a conductivity type opposite to that of the semiconductor substrate, whereby the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than that of the prior art optical semiconductor device having a pn junction formed by those two layers.
  • the semi-insulating semiconductor layer comprises InP doped with Cr and the conductivity type of the semiconductor forming the carrier blocking layer is p type. Therefore, the InP layer which is semi-insulating due to including Cr which serves as a deep donor is disposed between the carrier blocking layer and an upper cladding layer which is usually formed on the buried waveguide and the carrier blocking layer and comprises n type semiconductor which is a conductivity type opposite to that of the semiconductor substrate, whereby the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than that of the prior art optical semiconductor device having a pn junction formed by those two layers.
  • the semi-insulating semiconductor layer comprises non-doped AlInAs. Therefore, the semi-insulating non-doped AlInAs layer is disposed between the carrier blocking layer and an upper cladding layer which is usually formed on the buried waveguide and the carrier blocking layer and comprises n type semiconductor which is a conductivity type opposite to that of the semiconductor substrate, whereby the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than that of the prior art optical semiconductor device having a pn junction formed by those two layers.
  • the semi-insulating non-doped AlInAs layer can effectively block a diffusion of carriers from the semiconductor substrate or the cladding layer which comprise InP or the like.
  • a fabricating method of an optical semiconductor device includes a process of forming a layer which serves as a buried waveguide for each of a plurality of optical semiconductor elements on a semiconductor substrate, and a process of growing a semi-insulating semiconductor layer and subsequently a single pair or plural pairs of semiconductor layers, one pair of the semiconductor layers comprising a carrier blocking layer comprising semiconductor of the same conductivity type as that of the semiconductor substrate and a semi-insulating semiconductor layer, on both sides of the buried waveguide, such that a continuous layer is formed extending throughout the plural semiconductor elements, thereby forming a burying semiconductor layer comprising the semiconductor layer and the single pair or plural pairs of semiconductor layers.
  • the semi-insulating semiconductor layer is formed between the carrier blocking layer and an upper cladding layer which comprises semiconductor of a conductivity type opposite to that of the semiconductor substrate and is usually formed on the buried waveguide and the carrier blocking layer, and thus the capacitance between these layers is reduced with relative to that in the prior art. Therefore, a mutual interference between optical semiconductor elements can be reduced without a portion of the carrier blocking layer between the optical semiconductor elements being etched away, and the parasitic capacitances of the elements are reduced, thereby enabling the optical semiconductor device operate up to a higher frequency than in the prior art.
  • a plurality of optical semiconductor elements are a laser element and an optical modulator element and in the process of forming the buried waveguide a continuous semiconductor layer extending throughout the laser element and the optical modulator element is formed on the semiconductor substrate. Therefore, the semi-insulating semiconductor layer is formed between the carrier blocking layer and an upper cladding layer which is usually formed on both the buried waveguide and the carrier blocking layer and comprises semiconductor of a conductivity type opposite to that of the semiconductor substrate, and thus the capacitance between the upper cladding layer and the carrier blocking layer is reduced to a value lower than that of the prior art optical semiconductor device having a pn junction formed by these two layers.
  • a mutual interference between the laser element and the optical semiconductor modulator element can be reduced without etching away a portion of the carrier blocking layer between the laser element and the optical modulator element, and parasitic capacitance of the optical semiconductor modulator element is reduced, whereby the modulation bandwidth is made broader than in the prior art device.
  • it differs from the prior art fabricating method in that no process of etching a portion of the carrier blocking layer between optical semiconductor elements is required before growing the upper cladding layer, and no photolithography process is required for the etching. Therefore, there occur no contaminations on the surface of the semi-insulating semiconductor layer which is the uppermost layer, and crystallinity of the upper cladding layer which is grown on this layer is kept excellent, providing a high reliability optical semiconductor device.
  • the fabrication yield of the optical semiconductor device can be improved.
  • FIG. 1(a) is a perspective view illustrating an optical semiconductor device integrating a DFB laser and an optical modulator according to a first embodiment of the present invention
  • FIG. 1(b) is a perspective view of the device of FIG. 1(a) with a portion thereof removed.
  • FIG. 2(a) is a cross-sectional view at a surface perpendicular to the buried waveguide illustrating the optical modulator of the optical semiconductor device integrating a DFB laser and an optical modulator according to the first embodiment of the present invention
  • FIG. 2(b) is a cross-sectional view along a plane parallel to the buried waveguide through a broken line 2b--2b of FIG. 2(a) illustrating the optical semiconductor device of FIG. 2(a).
  • FIGS. 3(a)-3(k) are perspective views illustrating a method of fabricating the optical semiconductor device integrating a DFB laser and an optical modulator according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view at a surface perpendicular to a buried waveguide illustrating an optical modulator of an optical semiconductor device integrating a DFB laser and an optical modulator according to a second embodiment of the present invention.
  • FIG. 5 is a perspective view illustrating a prior art optical semiconductor device integrating a DFB laser and an optical modulator with a portion thereof removed.
  • FIG. 6(a) is a cross-sectional view at a surface perpendicular to the buried waveguide illustrating the optical modulator of the prior art optical semiconductor device integrating a DFB laser and an optical modulator
  • FIG. 6(b) is a cross-sectional view along a plane parallel to the buried waveguide through a broken line 6b--6b of FIG. 6(a) illustrating the optical semiconductor device.
  • FIG. 7 is a perspective view illustrating a method of fabricating the prior art optical semiconductor device integrating a DFB laser and an optical modulator.
  • FIGS. 1(a) and 1(b) An optical semiconductor device (a semiconductor laser with an optical modulator) integrating a DFB laser and a light absorption modulator according to the first embodiment is shown in FIGS. 1(a) and 1(b).
  • FIG. 1(a) is a perspective view of this optical semiconductor device
  • FIG. 1(b) is a perspective view of the same optical semiconductor device with a portion thereof removed.
  • reference numeral 1 designates a body of the semiconductor laser with the optical modulator
  • reference numeral 2 designates an n type InP substrate
  • reference numeral 3 designates a Ti/Pt/Au bottom surface electrode
  • reference numeral 4 designates an InGaAs/InGaAsP multiple quantum well light absorption layer
  • reference numeral 5 designates a p type InP second upper cladding layer
  • reference numeral 6 designates a p type InGaAs contact layer
  • reference numeral 7 designates a Cr/Au top surface electrode
  • reference numeral 8 designates a lower semi-insulating Fe-doped InP layer
  • reference numeral 9 designates an n type InP hole blocking layer
  • reference numeral 10 designates an upper semi-insulating Fe-doped InP layer
  • reference numeral 11 designates an InGaAs/InGaAsP multiple quantum well active layer
  • reference numeral 12 designates an InGaAsP buried diffraction grating
  • the principle of laser oscillation and light modulation in the optical semiconductor device according to this embodiment is fundamentally the same as in the described prior art optical semiconductor device. That is, the InGaAsP buried diffraction grating 12 beneath the active layer of the DFB laser is for stably lasing with a single wavelength. Further, the active layer 11 of the DFB laser 101 and the light absorption layer 4 of the optical modulator 102 is formed from the continuous InGaAs/InGaAsP multiple quantum well layer, and this layer is thick in the DFB laser and thin in the optical modulator, and the width of each quantum well included in this layer is narrower in the optical modulator than in the DFB laser.
  • the energy difference between the bottom levels of the conduction band and the valence band inside the quantum well of the DFB laser is smaller than that of the optical modulator, and when no bias voltage is applied to the optical modulator, light from the DFB laser is not absorbed in the light absorption layer 4.
  • a reverse bias voltage is applied to the optical modulator, the light is absorbed due to the quantum confinement Stark effect (QCSE).
  • QCSE quantum confinement Stark effect
  • the light radiated from the DFB laser driven by a direct current can be modulated by changing the bias voltage applied to the optical modulator.
  • the intensity of the light emitted from the light absorption modulator facet changes in response to the bias voltage applied to the modulator.
  • the optical semiconductor device differs from the described prior art optical semiconductor device in that there are burying layers on both sides of the buried waveguide.
  • a cross-sectional view of the optical modulator is illustrated in FIG. 2(a).
  • reference numeral 13 designates a p type InP cladding layer
  • reference numeral 26 designates a p type InP first upper cladding layer
  • reference numeral 30 designates the burying layers on both sides of the buried waveguide.
  • the burying layer 30 on both sides of the buried waveguide is formed by the lower semi-insulating Fe-doped InP layer 8, the n type InP hole blocking layer 9, and the upper semi-insulating Fe-doped InP layer 10.
  • FIG. 2(b) A schematic view of a cross-section of this optical semiconductor device in a plane parallel to the buried waveguide through a broken line 2b--2b in FIG. 2(a) is shown in FIG. 2(b).
  • the interface forming a pn junction in the optical semiconductor device according to this embodiment, there is an upper semi-insulating Fe-doped InP layer 10 between the n type InP hole blocking layer 9 and the p type InP second upper cladding layer 5. Therefore, the capacitances C A and C C between the hole blocking layer 9 and the second upper cladding layer 5 illustrated in FIG. 2(b) are significantly smaller than the capacitances (C 1 and C 3 in FIG. 6(b)) between these two layers in the prior art.
  • the capacitances C B and C D between the hole blocking layer 9 and the n type InP substrate 2 are as small as C A and C C . Since the low resistance n type InP hole blocking layer 9 is continuous through the DFB laser 101 and the optical modulator 102, C A is associated with C C and C D via the resistance R of this layer. However, C A and C C are significantly smaller than those capacitances in the prior art as described above, the mutual interference between the DFB laser and the optical modulator through this path formed by the hole blocking layer 9 is sufficiantly reduced. That is, the electrical isolation of these elements is possible without etching and removing a portion of the hole blocking layer between the DFB laser and the optical modulator as in the prior art.
  • the parasitic capacitance C A of the optical modulator is small and the parasitic capacitances (C C and C D ) of the DFB laser are also small as described above, it is possible to operate the optical modulator at higher frequencies in this embodiment. In other words, the modulation bandwidth of the optical modulator can be broadened.
  • FIG. 3(a) A method of fabricating the optical semiconductor device according to this embodiment will be described.
  • two stripe shaped SiO 2 selective growth masks 21 are formed on opposite sides of a region, which becomes the buried waveguide, of the DFB laser forming region on the surface of the n type InP substrate 2, and regions of the substrate, except this masked region, are etched to a prescribed depth.
  • FIG. 3(b) the InGaAs/InGaAsP multiple quantum well layer 22, the p type InP cladding layer 13, the InGaAsP guide layer 23, and the p type InP cap layer 24 are successively grown on the region except the SiO 2 mask region using MOCVD.
  • the thickness of the growth layer on the region between the SiO 2 masks becomes larger than that of the layers grown on the other region. Therefore, the thickness of the multiple quantum well layer 22 becomes larger than that of the same multiple quantum well layer grown on the other region.
  • the SiO 2 masks are removed.
  • a periodic resist pattern is formed using the interference exposure method, and, using this resist as a mask, the p type InP cap layer 24 and the InGaAsP guide layer 23 are etched, thereby forming the diffraction grating 12 having a periodic pattern. Furthermore, as illustrated in FIG.
  • the diffraction grating 12 is left on the region where the DFB laser is formed.
  • the p type InP first upper cladding layer 26 is grown on the entire surface using MOCVD.
  • the SiO 2 etching mask 27 is formed on the region where the buried waveguide is formed, and using this mask, wet etching is performed and the active layer mesa 14 (buried waveguide) is formed.
  • the SiO 2 protective film 29 is disposed on the entire surface by sputtering.
  • the portions of the SiO 2 protective film 29 directly above the active layer of the DFB laser and the light absorption layer of the optical modulator are removed, and the Cr/Au film is disposed on the entire surface by evaporation.
  • the region where the top surface electrode is formed is plated with Au, and by etching the Cr/Au film using this Au plating layer as a mask, the Cr/Au top surface electrode 7 is formed.
  • the Ti/Pt/Au bottom surface electrode is formed, thereby obtaining the optical semiconductor device integrating a DFB laser and a light absorption modulator illustrated in FIG. 1.
  • the method of fabricating the optical semiconductor device according to this embodiment differs from the previously described prior art fabricating method in that there is no process of etching and removing a portion of the n type InP hole blocking layer 9 between the DFB laser and the optical modulator before growing the p type InP second upper cladding layer. Therefore, no photolithography process is performed for that etching and consequently, no contamination of the surface of the upper semi-insulating Fe-doped InP layer occurs and the crystallinity of the p type InP second upper cladding layer, which grows on the surface of the upper semi-insulating Fe-doped InP layer, is kept excellent, thereby producing a highly reliable optical semiconductor device. Furthermore, since it includes no process of etching and removing only the portion of the n type InP hole blocking layer 9 between the DFB laser and the optical modulator, which is difficult in its control, the yield of optical semiconductor devices can be improved.
  • Ti serves as a deep acceptor like Fe, in InP
  • Ti-doped InP can be used for the semi-insulating InP layers 8 and 10 in place of Fe-doped InP, and a similar effect is obtained.
  • Cr serves as a deep donor in InP
  • Cr-doped InP can be used for the semi-insulating InP layers 8 and 10 in place of the Fe-doped InP, and similar effects as described above are obtained.
  • the conductivity types of respective layers must be opposite to those described above. That is, the InP substrate and the hole blocking layer should be p type and the upper cladding layer should be n type.
  • the hole blocking layer is replaced by an electron blocking layer for blocking the diffusion of electrons from the n type upper cladding layer.
  • Semi-insulating non-doped AlInAs can be used for the semi-insulating InP layers 8 and 10 in place of Fe-doped InP, and similar effects as described above are obtained. This is because the band gap energy of the AlInAs is larger than that of InP and this can effectively block the diffusion of carriers (electrons and holes) from the InP layers.
  • FIG. 4 A cross-section of an optical modulator of an optical semiconductor device according to this embodiment, integrating a DFB laser and a light absorption modulator, is illustrated in FIG. 4.
  • the burying layer 30 on both sides of the buried waveguide 14 comprises three layers of semi-insulating Fe-doped InP layer 41 and two layers of n type InP, hole blocking layer 42, alternately laminated on each other.
  • the structures other than this burying layer are the same as the optical semiconductor device of the first embodiment for both the DFB laser and the optical modulator. That is, in FIG.
  • reference numeral 2 designates an n type InP substrate
  • reference numeral 3 designates a Ti/Pt/Au bottom surface electrode
  • reference numeral 4 designates an InGaAs/InGaAsP multiple quantum well light absorption layer
  • reference numeral 5 designates a p type InP second upper cladding layer
  • reference numeral 6 designates a p type InGaAs contact layer
  • reference numeral 7 designates a Cr/Au top surface electrode
  • reference numeral 13 designates a p type InP cladding layer
  • reference numeral 26 designates a p type InP first upper cladding layer
  • reference numeral 29 designates an SiO 2 protective film.
  • the capacitance between the hole blocking layer 42 and the second upper cladding layer 5 is significantly smaller than the pn junction capacitance between the two corresponding layers in the prior art. Since the low resistance n type InP hole blocking layer 42 is continuous through the DFB laser and the optical modulator, the capacitance on the modulator side is associated with the capacitance on the DFB laser side through the resistor of this layer.
  • the capacitance on the modulator side is sufficiently smaller than that in the prior art, and the mutual interference between the DFB laser and the optical modulator in this path is reduced. That is, the electrical isolation of these elements is possible without etching and removing the portion of the hole blocking layer between the DFB laser and the optical modulator as in the prior art. Furthermore, since the parasitic capacitance of the optical modulator is small and the parasitic capacitance of the DFB laser which is associated with the former is small, it is possible to operate the optical modulator at a higher frequency in this embodiment. In other words, the modulation bandwidth of the optical modulator can be broadened.
  • the burying layers 30 on both sides of the buried waveguide are grown such that three semi-insulating Fe-doped InP layers 41 and two n type InP hole blocking layers 42 are alternately grown as illustrated in FIG. 4.
  • the fabricating method is the same as the first embodiment.
  • the method of fabricating an optical semiconductor device of this embodiment differs from the prior art fabricating method in that no process is required for etching and removing a portion of the n type InP hole blocking layer 42 between the DFB laser and the optical modulator before growing the p type InP second upper cladding layer.
  • Ti-doped InP, Cr-doped InP, or non-doped AlGaAs can be used for the semi-insulating InP layer 41 in place of Fe-doped InP. In these cases, similar effects as when Fe-doped InP is used are obtained. However, when the Cr-doped InP is used, the conductivity types of respective layers must be opposite to those which are described with reference to FIG. 4.
  • the burying layers 30 on both sides of the buried waveguide comprise three semi-insulating Fe-doped InP layers 41 and two n type InP hole blocking layers 42 alternately laminated on each other, a greater number of semi-insulating Fe-doped InP layers and n type InP hole blocking layers can be alternately laminated and similar effects obtained.
  • the uppermost layer and the lowermost layer must be layers comprising semi-insulating Fe-doped InP.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
US08/558,791 1994-12-05 1995-11-15 Optical semiconductor device Expired - Lifetime US5717710A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30064794A JP3386261B2 (ja) 1994-12-05 1994-12-05 光半導体装置、及びその製造方法
JP6-300647 1994-12-05

Publications (1)

Publication Number Publication Date
US5717710A true US5717710A (en) 1998-02-10

Family

ID=17887381

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/558,791 Expired - Lifetime US5717710A (en) 1994-12-05 1995-11-15 Optical semiconductor device

Country Status (4)

Country Link
US (1) US5717710A (ja)
JP (1) JP3386261B2 (ja)
DE (1) DE19545164B8 (ja)
FR (1) FR2727791B1 (ja)

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991322A (en) * 1993-07-20 1999-11-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical device
US6134368A (en) * 1996-08-30 2000-10-17 Nec Corporation Optical semiconductor device with a current blocking structure and method for making the same
US6222867B1 (en) * 1997-05-16 2001-04-24 Nec Corporation Optical semiconductor device having waveguide layers buried in an InP current blocking layer
EP1139526A2 (en) * 2000-03-31 2001-10-04 Agere Systems Optoelectronics Guardian Corporation Dopant diffusion blocking for optoelectronic devices using InAlAs or InGaAlAs
US6343163B1 (en) * 1999-11-17 2002-01-29 Oki Electric Industry Co., Ltd. Electro-absorption modulator and method of manufacturing a semiconductor optical device
EP1225670A1 (en) * 2001-01-18 2002-07-24 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor device with current confinement structure
US6449298B1 (en) * 1998-06-23 2002-09-10 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US20030013261A1 (en) * 2001-07-16 2003-01-16 Fuji Photo Film Co., Ltd. Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer
EP1286439A2 (en) * 2001-08-21 2003-02-26 Nippon Telegraph and Telephone Corporation Semiconductor optical device and method of manufacturing the same
US20030062517A1 (en) * 2001-10-03 2003-04-03 Agilent Technologies, Inc. Semiconductor device with current confinement structure
US20030067010A1 (en) * 2001-08-21 2003-04-10 Ryuzo Iga Semiconductor optical device and method of manufacturing the same
US20030214990A1 (en) * 2002-05-20 2003-11-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP1372229A1 (en) * 2002-06-12 2003-12-17 Agilent Technologies Inc., A Delaware Corporation Integrated semiconductor laser and waveguide device
EP1372228A1 (en) * 2002-06-12 2003-12-17 Agilent Technologies, Inc. - a Delaware corporation - Integrated semiconductor laser and waveguide device
US6678299B1 (en) * 1999-06-02 2004-01-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser apparatus
US20050013337A1 (en) * 2003-05-30 2005-01-20 Thomas Jung Semiconductor injection locked lasers and method
US20050036729A1 (en) * 2003-08-13 2005-02-17 Young-Hyun Kim Integrated optical device and fabricating method thereof
US20050265412A1 (en) * 2004-05-28 2005-12-01 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser diode and manufacturing method thereof
US20060050753A1 (en) * 2004-09-07 2006-03-09 National Inst. Of Adv. Industrial Sci. And Tech. Quantum nanostructure semiconductor laser
US20060120421A1 (en) * 2004-12-02 2006-06-08 Fujitsu Limited Semiconductor laser and manufacturing method thereof
US20060279829A1 (en) * 2005-06-13 2006-12-14 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
CN1307756C (zh) * 2001-03-30 2007-03-28 阿吉尔系统光电子学监护股份有限公司 光电子器件
GB2430548A (en) * 2005-09-27 2007-03-28 Agilent Technologies Inc A laser integrated with an electro-absorption modulator
US20070183470A1 (en) * 2005-07-25 2007-08-09 Takashi Nakabayashi Distributed feedback semiconductor laser
US20080049805A1 (en) * 2006-08-28 2008-02-28 Mitsubishi Electric Corporation Buried type semiconductor laser
US20080090316A1 (en) * 2000-05-30 2008-04-17 Osram Gmbh Method for manufacture of optically pumped, surface-emitting semiconductor laser device
US20080290358A1 (en) * 2007-04-23 2008-11-27 Kenji Hiratsuka Semiconductor light-emitting device and a method to produce the same
US20090003396A1 (en) * 2007-06-26 2009-01-01 Simone Codato Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same
US20090197363A1 (en) * 2008-01-31 2009-08-06 Mitsubishi Electric Corporation Method for manufacturing semiconductor optical device
US20090290611A1 (en) * 2008-05-26 2009-11-26 Mitsubishi Electric Corporation Semiconductor laser and manufacturing method therefor
CN101297240B (zh) * 2005-09-28 2010-05-19 讯宝科技公司 使用电吸收调制的绿激光器系统的彩色图像投影装置和方法
CN101123342B (zh) * 2006-08-10 2010-06-16 三菱电机株式会社 光波导、半导体光学集成元件及其制造方法
US8841143B2 (en) 2012-09-21 2014-09-23 Mitsubishi Electric Corporation Method of manufacturing optical modulator
CN110098562A (zh) * 2019-06-04 2019-08-06 厦门市芯诺通讯科技有限公司 一种高速掩埋dfb半导体激光器及其制备方法
US11462886B2 (en) * 2019-08-09 2022-10-04 Lumentum Japan, Inc. Buried-type semiconductor optical device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100337704B1 (ko) * 2000-07-04 2002-05-22 윤종용 전계흡수형 변조기가 집적된 레이저 다이오드의 제조 방법
WO2020240644A1 (ja) * 2019-05-27 2020-12-03 三菱電機株式会社 光半導体装置および光半導体装置の製造方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
EP0314372A2 (en) * 1987-10-29 1989-05-03 AT&T Corp. Current confinement and blocking region for semiconductor devices
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4999315A (en) * 1984-06-15 1991-03-12 At&T Bell Laboratories Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
JPH03286586A (ja) * 1990-04-03 1991-12-17 Nec Corp 集積型光変調器の製造方法
EP0614253A1 (en) * 1993-03-03 1994-09-07 Nec Corporation Multi-quantum well (MQW) structure laser diode/modulator integrated light source
JPH0730185A (ja) * 1993-07-07 1995-01-31 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US5539763A (en) * 1993-09-22 1996-07-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor lasers and methods for fabricating semiconductor lasers
US5548607A (en) * 1994-06-08 1996-08-20 Lucent Technologies, Inc. Article comprising an integrated laser/modulator combination

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371966A (en) * 1980-11-06 1983-02-01 Xerox Corporation Heterostructure lasers with combination active strip and passive waveguide strip
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
DE69204828T2 (de) * 1992-06-09 1996-05-02 Ibm Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4999315A (en) * 1984-06-15 1991-03-12 At&T Bell Laboratories Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
EP0314372A2 (en) * 1987-10-29 1989-05-03 AT&T Corp. Current confinement and blocking region for semiconductor devices
JPH03286586A (ja) * 1990-04-03 1991-12-17 Nec Corp 集積型光変調器の製造方法
EP0614253A1 (en) * 1993-03-03 1994-09-07 Nec Corporation Multi-quantum well (MQW) structure laser diode/modulator integrated light source
JPH0730185A (ja) * 1993-07-07 1995-01-31 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US5539763A (en) * 1993-09-22 1996-07-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor lasers and methods for fabricating semiconductor lasers
US5548607A (en) * 1994-06-08 1996-08-20 Lucent Technologies, Inc. Article comprising an integrated laser/modulator combination

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
Aoki et al, "High-Speed (10 Gbit/s) And Low-Drive-Voltage (1V Peak To Peak) InGaAs/InGaAsP MOW Electroabsorption-Modulator Integrated DFB Laser With Semi-Insulating Buried Heterostructure", Electronics Letters, vol. 28, No. 12, Jun. 1992, pp. 1157-1158.
Aoki et al, "InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, 1993, pp. 2088-2096, Jun. 1993.
Aoki et al, High Speed (10 Gbit/s) And Low Drive Voltage (1V Peak To Peak) InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated DFB Laser With Semi Insulating Buried Heterostructure , Electronics Letters, vol. 28, No. 12, Jun. 1992, pp. 1157 1158. *
Aoki et al, InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band Gap Energy Control Selective Area MOCVD , IEEE Journal of Quantum Electronics, vol. 29, No. 6, 1993, pp. 2088 2096, Jun. 1993. *
Koch et al., "Semiconductor Photonic Integrated Circuits", IEEE Journal of Quantum Electronics, vol. 27, No. 3, pp. 641-653, Mar. 1, 1991.
Koch et al., Semiconductor Photonic Integrated Circuits , IEEE Journal of Quantum Electronics, vol. 27, No. 3, pp. 641 653, Mar. 1, 1991. *
Soda et al., "High-Power and High-Speed Semi-Insulating BH Semi-Insulating BH Structure Monolithic Electroabsorption Modulator/DFB Laser Light Source", Electronics Letters., vol. 26, No. 1, pp. 9-10, Jan. 4, 1990.
Soda et al., High Power and High Speed Semi Insulating BH Semi Insulating BH Structure Monolithic Electroabsorption Modulator/DFB Laser Light Source , Electronics Letters., vol. 26, No. 1, pp. 9 10, Jan. 4, 1990. *

Cited By (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991322A (en) * 1993-07-20 1999-11-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical device
US6134368A (en) * 1996-08-30 2000-10-17 Nec Corporation Optical semiconductor device with a current blocking structure and method for making the same
US6222867B1 (en) * 1997-05-16 2001-04-24 Nec Corporation Optical semiconductor device having waveguide layers buried in an InP current blocking layer
US6391671B2 (en) 1997-05-16 2002-05-21 Nec Corporation Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer
US6449298B1 (en) * 1998-06-23 2002-09-10 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US6678299B1 (en) * 1999-06-02 2004-01-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser apparatus
US6343163B1 (en) * 1999-11-17 2002-01-29 Oki Electric Industry Co., Ltd. Electro-absorption modulator and method of manufacturing a semiconductor optical device
EP1139526A2 (en) * 2000-03-31 2001-10-04 Agere Systems Optoelectronics Guardian Corporation Dopant diffusion blocking for optoelectronic devices using InAlAs or InGaAlAs
EP1139526A3 (en) * 2000-03-31 2002-01-16 Agere Systems Optoelectronics Guardian Corporation Dopant diffusion blocking for optoelectronic devices using InAlAs or InGaAlAs
US20080090316A1 (en) * 2000-05-30 2008-04-17 Osram Gmbh Method for manufacture of optically pumped, surface-emitting semiconductor laser device
US8592236B2 (en) * 2000-05-30 2013-11-26 Osram Gmbh Method for manufacture of optically pumped, surface-emitting semiconductor laser device
EP1225670A1 (en) * 2001-01-18 2002-07-24 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor device with current confinement structure
US6509580B2 (en) 2001-01-18 2003-01-21 Agilent Technologies, Inc. Semiconductor device with current confinement structure
CN1307756C (zh) * 2001-03-30 2007-03-28 阿吉尔系统光电子学监护股份有限公司 光电子器件
US6717969B2 (en) * 2001-07-16 2004-04-06 Fuji Photo Film Co., Ltd. Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer
US20030013261A1 (en) * 2001-07-16 2003-01-16 Fuji Photo Film Co., Ltd. Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer
EP1286435A3 (en) * 2001-08-21 2005-02-09 Nippon Telegraph and Telephone Corporation Semiconductor optical device and method of manufacturing the same
US6990131B2 (en) 2001-08-21 2006-01-24 Nippon Telegraph & Telephone Corporation Semiconductor optical device and method of manufacturing the same
US20030067010A1 (en) * 2001-08-21 2003-04-10 Ryuzo Iga Semiconductor optical device and method of manufacturing the same
EP1286439A2 (en) * 2001-08-21 2003-02-26 Nippon Telegraph and Telephone Corporation Semiconductor optical device and method of manufacturing the same
EP1286439A3 (en) * 2001-08-21 2005-02-02 Nippon Telegraph and Telephone Corporation Semiconductor optical device and method of manufacturing the same
EP1300917A1 (en) * 2001-10-03 2003-04-09 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor device with current confinement structure
US20030062517A1 (en) * 2001-10-03 2003-04-03 Agilent Technologies, Inc. Semiconductor device with current confinement structure
US20030214990A1 (en) * 2002-05-20 2003-11-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20040057646A1 (en) * 2002-06-12 2004-03-25 Berry Graham Michael Integrated semiconductor laser device and method of manufacture thereof
US6931041B2 (en) 2002-06-12 2005-08-16 Agilent Technologies, Inc. Integrated semiconductor laser device and method of manufacture thereof
US6937632B2 (en) * 2002-06-12 2005-08-30 Agilent Technologies, Inc. Integrated semiconductor laser and waveguide device
US20040062467A1 (en) * 2002-06-12 2004-04-01 Berry Graham Michael Integrated semiconductor laser and waveguide device
EP1372228A1 (en) * 2002-06-12 2003-12-17 Agilent Technologies, Inc. - a Delaware corporation - Integrated semiconductor laser and waveguide device
EP1372229A1 (en) * 2002-06-12 2003-12-17 Agilent Technologies Inc., A Delaware Corporation Integrated semiconductor laser and waveguide device
US20050013337A1 (en) * 2003-05-30 2005-01-20 Thomas Jung Semiconductor injection locked lasers and method
US7016558B2 (en) * 2003-08-13 2006-03-21 Samsung Electronics Co., Ltd. Integrated optical device and fabricating method thereof
US20050036729A1 (en) * 2003-08-13 2005-02-17 Young-Hyun Kim Integrated optical device and fabricating method thereof
US7443899B2 (en) * 2004-05-28 2008-10-28 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser diode and manufacturing method thereof
US20050265412A1 (en) * 2004-05-28 2005-12-01 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser diode and manufacturing method thereof
US20060050753A1 (en) * 2004-09-07 2006-03-09 National Inst. Of Adv. Industrial Sci. And Tech. Quantum nanostructure semiconductor laser
US7515622B2 (en) * 2004-09-07 2009-04-07 National Institute Of Advanced Industrial Science And Technology Quantum nanostructure semiconductor laser
US7852890B2 (en) * 2004-12-02 2010-12-14 Fujitsu Limited Semiconductor laser and manufacturing method thereof
US20060120421A1 (en) * 2004-12-02 2006-06-08 Fujitsu Limited Semiconductor laser and manufacturing method thereof
US20060279829A1 (en) * 2005-06-13 2006-12-14 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
US7180648B2 (en) * 2005-06-13 2007-02-20 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
US7474683B2 (en) * 2005-07-25 2009-01-06 Sumitomo Electric Industries, Ltd. Distributed feedback semiconductor laser
US20070183470A1 (en) * 2005-07-25 2007-08-09 Takashi Nakabayashi Distributed feedback semiconductor laser
GB2430548B (en) * 2005-09-27 2011-08-10 Agilent Technologies Inc An integrated modulator-laser structure and a method of producing same
US20070081566A1 (en) * 2005-09-27 2007-04-12 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated modulator-laser structure and a method of producing same
GB2430548A (en) * 2005-09-27 2007-03-28 Agilent Technologies Inc A laser integrated with an electro-absorption modulator
US7564885B2 (en) * 2005-09-27 2009-07-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated modulator-laser structure and a method of producing same
CN101297240B (zh) * 2005-09-28 2010-05-19 讯宝科技公司 使用电吸收调制的绿激光器系统的彩色图像投影装置和方法
CN101123342B (zh) * 2006-08-10 2010-06-16 三菱电机株式会社 光波导、半导体光学集成元件及其制造方法
US20080049805A1 (en) * 2006-08-28 2008-02-28 Mitsubishi Electric Corporation Buried type semiconductor laser
US7720123B2 (en) * 2006-08-28 2010-05-18 Mitsubishi Electric Corporation Buried type semiconductor laser
US20080290358A1 (en) * 2007-04-23 2008-11-27 Kenji Hiratsuka Semiconductor light-emitting device and a method to produce the same
US7897422B2 (en) * 2007-04-23 2011-03-01 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device and a method to produce the same
US7539228B2 (en) 2007-06-26 2009-05-26 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same
US20090003396A1 (en) * 2007-06-26 2009-01-01 Simone Codato Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same
US20090197363A1 (en) * 2008-01-31 2009-08-06 Mitsubishi Electric Corporation Method for manufacturing semiconductor optical device
US7618836B2 (en) * 2008-01-31 2009-11-17 Mitsubishi Electric Corporation Method for manufacturing semiconductor optical device
US7835413B2 (en) 2008-05-26 2010-11-16 Mitsubishi Electric Corporation Semiconductor laser
US20090290611A1 (en) * 2008-05-26 2009-11-26 Mitsubishi Electric Corporation Semiconductor laser and manufacturing method therefor
US8841143B2 (en) 2012-09-21 2014-09-23 Mitsubishi Electric Corporation Method of manufacturing optical modulator
CN110098562A (zh) * 2019-06-04 2019-08-06 厦门市芯诺通讯科技有限公司 一种高速掩埋dfb半导体激光器及其制备方法
CN110098562B (zh) * 2019-06-04 2024-02-06 厦门市炬意科技有限公司 一种高速掩埋dfb半导体激光器及其制备方法
US11462886B2 (en) * 2019-08-09 2022-10-04 Lumentum Japan, Inc. Buried-type semiconductor optical device

Also Published As

Publication number Publication date
JP3386261B2 (ja) 2003-03-17
FR2727791B1 (fr) 1997-12-12
DE19545164B8 (de) 2007-06-28
FR2727791A1 (fr) 1996-06-07
JPH08162701A (ja) 1996-06-21
DE19545164A1 (de) 1996-06-13
DE19545164B4 (de) 2007-02-08

Similar Documents

Publication Publication Date Title
US5717710A (en) Optical semiconductor device
US7941024B2 (en) Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD
US5728605A (en) Method for producing an optical semiconductor device having a carrier injection path or an electric-field applying path
JPH10173291A (ja) 半導体レーザ装置
EP1719003B1 (en) Buried heterostructure device fabricated by single step mocvd
US5636237A (en) Semiconductor laser device which makes it possible to realize high-speed modulation
US6018539A (en) Semiconductor laser and method of fabricating semiconductor laser
US4870468A (en) Semiconductor light-emitting device and method of manufacturing the same
US7349456B2 (en) Gain-coupled distributed quantum cascade laser
US5912475A (en) Optical semiconductor device with InP
JPH07106685A (ja) 半導体レーザ
JPH05251817A (ja) 可変波長半導体レーザ装置
US20020105992A1 (en) Semiconductor optical device and method for fabricating same
EP0602579B1 (en) Semiconductor laser and method of making the semiconductor laser
US5442649A (en) Semiconductor laser device
US6489177B1 (en) Modulator-integrated semiconductor laser and method of fabricating the same
US6204078B1 (en) Method of fabricating photonic semiconductor device using selective MOVPE
US20020105989A1 (en) Ridge waveguide type photo semiconductor device and method for fabricating same
US6643315B2 (en) Distributed feedback semiconductor laser device and multi-wavelength laser array
US5360763A (en) Method for fabricating an optical semiconductor device
JPH09162484A (ja) プレーナ電極型半導体光素子及びその製造方法
JP3264179B2 (ja) 半導体発光装置およびその製造方法
JP2630035B2 (ja) 波長可変半導体レーザ
KR100681294B1 (ko) 반도체 레이저 소자 및 그 제조 방법
JPS6261383A (ja) 半導体レ−ザおよびその製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MIYAZAKI, YASUNORI;ISHIMURA, EITARO;KIMURA, TATSUYA;REEL/FRAME:007935/0225

Effective date: 19950810

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12