FR2683371A1 - Memoire-tampon d'entree d'adresse d'un dispositif de memoire a semiconducteurs. - Google Patents

Memoire-tampon d'entree d'adresse d'un dispositif de memoire a semiconducteurs. Download PDF

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Publication number
FR2683371A1
FR2683371A1 FR9202652A FR9202652A FR2683371A1 FR 2683371 A1 FR2683371 A1 FR 2683371A1 FR 9202652 A FR9202652 A FR 9202652A FR 9202652 A FR9202652 A FR 9202652A FR 2683371 A1 FR2683371 A1 FR 2683371A1
Authority
FR
France
Prior art keywords
address
inverter
signal
input terminal
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR9202652A
Other languages
English (en)
French (fr)
Inventor
Choi Do-Chan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2683371A1 publication Critical patent/FR2683371A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
FR9202652A 1991-10-31 1992-03-05 Memoire-tampon d'entree d'adresse d'un dispositif de memoire a semiconducteurs. Pending FR2683371A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910019331A KR930008838A (ko) 1991-10-31 1991-10-31 어드레스 입력 버퍼

Publications (1)

Publication Number Publication Date
FR2683371A1 true FR2683371A1 (fr) 1993-05-07

Family

ID=19322105

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9202652A Pending FR2683371A1 (fr) 1991-10-31 1992-03-05 Memoire-tampon d'entree d'adresse d'un dispositif de memoire a semiconducteurs.

Country Status (8)

Country Link
US (1) US5305282A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2606998B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR930008838A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4207999A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2683371A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2261088B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1254678B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW197522B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768880B2 (ja) * 1993-01-19 1998-06-25 株式会社東芝 半導体記憶装置
US5493530A (en) * 1993-08-26 1996-02-20 Paradigm Technology, Inc. Ram with pre-input register logic
KR0120592B1 (ko) * 1994-09-09 1997-10-20 김주용 신호 변환 장치를 갖고 있는 어드레스 입력버퍼
KR100192568B1 (ko) * 1995-01-25 1999-06-15 윤종용 반도체 메모리장치의 어드레스 버퍼회로
KR0145852B1 (ko) * 1995-04-14 1998-11-02 김광호 반도체메모리소자의 어드레스버퍼
JP3782840B2 (ja) 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
US6043684A (en) * 1995-12-20 2000-03-28 Cypress Semiconductor Corp. Method and apparatus for reducing skew between input signals and clock signals within an integrated circuit
US6411140B1 (en) 1995-12-20 2002-06-25 Cypress Semiconductor Corporation Method and apparatus for reducing skew between input signals and clock signals within an integrated circuit
US5835970A (en) * 1995-12-21 1998-11-10 Cypress Semiconductor Corp. Burst address generator having two modes of operation employing a linear/nonlinear counter using decoded addresses
US5903174A (en) * 1995-12-20 1999-05-11 Cypress Semiconductor Corp. Method and apparatus for reducing skew among input signals within an integrated circuit
KR100190373B1 (ko) * 1996-02-08 1999-06-01 김영환 리드 패스를 위한 고속 동기식 메모리 장치
US5625302A (en) * 1996-02-08 1997-04-29 International Business Machines Corporation Address buffer for synchronous system
KR100226266B1 (ko) * 1996-06-29 1999-10-15 김영환 반도체 메모리장치의 카스 버퍼회로
KR100239692B1 (ko) * 1996-07-27 2000-01-15 김영환 반도체 장치의 출력회로
US5838622A (en) * 1997-02-28 1998-11-17 Mosel Vitelic Corporation Reconfigurable multiplexed address scheme for asymmetrically addressed DRAMs
US5889416A (en) * 1997-10-27 1999-03-30 Cypress Semiconductor Corporation Symmetrical nand gates
US6097222A (en) * 1997-10-27 2000-08-01 Cypress Semiconductor Corp. Symmetrical NOR gates
US6278295B1 (en) 1998-02-10 2001-08-21 Cypress Semiconductor Corp. Buffer with stable trip point
US6023176A (en) * 1998-03-27 2000-02-08 Cypress Semiconductor Corp. Input buffer
KR100271653B1 (ko) * 1998-04-29 2000-12-01 김영환 입력버퍼회로
JP5218228B2 (ja) * 2008-04-23 2013-06-26 新東工業株式会社 搬送装置及びブラスト加工装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104733A (en) * 1976-08-23 1978-08-01 Hitachi, Ltd. Address selecting circuitry for semiconductor memory device
EP0206928A2 (en) * 1985-06-20 1986-12-30 STMicroelectronics, Inc. Low active-power address buffer
US4879681A (en) * 1986-12-24 1989-11-07 Hitachi, Ltd. Semiconductor integrated circuit device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031415A (en) * 1975-10-22 1977-06-21 Texas Instruments Incorporated Address buffer circuit for semiconductor memory
JPS57118599U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1981-01-14 1982-07-23
JPS5954096A (ja) * 1982-09-22 1984-03-28 Hitachi Ltd ダイナミツク型ｍｏｓｒａｍ
US4541078A (en) * 1982-12-22 1985-09-10 At&T Bell Laboratories Memory using multiplexed row and column address lines
US4636986B1 (en) * 1985-01-22 1999-12-07 Texas Instruments Inc Separately addressable memory arrays in a multiple array semiconductor chip
JPS63213196A (ja) * 1987-02-27 1988-09-06 Oki Electric Ind Co Ltd 半導体メモリ装置のアドレスバツフア回路
JPH0782750B2 (ja) * 1987-05-13 1995-09-06 三菱電機株式会社 ダイナミツクｒａｍ
NL9001500A (nl) * 1990-07-02 1992-02-03 Philips Nv Geintegreerde schakeling voorzien van een invoer buffer schakeling.
US5191555A (en) * 1990-07-31 1993-03-02 Texas Instruments, Incorporated Cmos single input buffer for multiplexed inputs

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104733A (en) * 1976-08-23 1978-08-01 Hitachi, Ltd. Address selecting circuitry for semiconductor memory device
EP0206928A2 (en) * 1985-06-20 1986-12-30 STMicroelectronics, Inc. Low active-power address buffer
US4879681A (en) * 1986-12-24 1989-11-07 Hitachi, Ltd. Semiconductor integrated circuit device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE. 15 Février 1979, NEW YORK US pages 142 - 143 LEE ET AL 'A 80ns 5V-only Dynamic RAM' *
WESTE N H E & ESHRAGHIAN K 'Principles of CMOS VLSI design' Octobre 1985 , ADDISON-WESLEY , READING, US *

Also Published As

Publication number Publication date
JP2606998B2 (ja) 1997-05-07
GB2261088A (en) 1993-05-05
US5305282A (en) 1994-04-19
ITMI920604A1 (it) 1993-09-16
TW197522B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-01-01
GB2261088B (en) 1995-11-22
IT1254678B (it) 1995-09-28
KR930008838A (ko) 1993-05-22
GB9205767D0 (en) 1992-04-29
DE4207999A1 (de) 1993-05-06
ITMI920604A0 (it) 1992-03-16
JPH05159580A (ja) 1993-06-25

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