FR2625368B1 - Circuit integre monolithique micro-onde et procede de fabrication correspondant - Google Patents

Circuit integre monolithique micro-onde et procede de fabrication correspondant

Info

Publication number
FR2625368B1
FR2625368B1 FR8817332A FR8817332A FR2625368B1 FR 2625368 B1 FR2625368 B1 FR 2625368B1 FR 8817332 A FR8817332 A FR 8817332A FR 8817332 A FR8817332 A FR 8817332A FR 2625368 B1 FR2625368 B1 FR 2625368B1
Authority
FR
France
Prior art keywords
manufacturing
integrated circuit
monolithic integrated
microwave monolithic
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8817332A
Other languages
English (en)
Other versions
FR2625368A1 (fr
Inventor
Takahide Ishikawa
Kazuhiko Nakaha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2625368A1 publication Critical patent/FR2625368A1/fr
Application granted granted Critical
Publication of FR2625368B1 publication Critical patent/FR2625368B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
FR8817332A 1987-12-28 1988-12-28 Circuit integre monolithique micro-onde et procede de fabrication correspondant Expired - Fee Related FR2625368B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62335886A JPH0793410B2 (ja) 1987-12-28 1987-12-28 半導体装置

Publications (2)

Publication Number Publication Date
FR2625368A1 FR2625368A1 (fr) 1989-06-30
FR2625368B1 true FR2625368B1 (fr) 1993-07-23

Family

ID=18293474

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8817332A Expired - Fee Related FR2625368B1 (fr) 1987-12-28 1988-12-28 Circuit integre monolithique micro-onde et procede de fabrication correspondant

Country Status (4)

Country Link
US (2) US4921814A (fr)
JP (1) JPH0793410B2 (fr)
FR (1) FR2625368B1 (fr)
GB (1) GB2213320B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192701A (en) * 1988-03-17 1993-03-09 Kabushiki Kaisha Toshiba Method of manufacturing field effect transistors having different threshold voltages
US5459343A (en) * 1992-02-21 1995-10-17 Texas Instruments Incorporated Back gate FET microwave switch
JP2849289B2 (ja) * 1992-08-28 1999-01-20 三菱電機株式会社 半導体装置
JPH06334445A (ja) * 1993-05-19 1994-12-02 Mitsubishi Electric Corp 半導体集積回路
US5387880A (en) * 1993-10-20 1995-02-07 Trw Inc. Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias
JPH09260957A (ja) * 1996-01-18 1997-10-03 Fujitsu Ltd 半導体増幅回路
JP2757848B2 (ja) * 1996-01-23 1998-05-25 日本電気株式会社 電界効果型半導体装置
JPH10242394A (ja) * 1997-02-27 1998-09-11 Matsushita Electron Corp 半導体装置の製造方法
JPH1188065A (ja) * 1997-09-11 1999-03-30 Mitsubishi Electric Corp 半導体増幅回路
US5973565A (en) * 1997-09-30 1999-10-26 Samsung Electronics Co., Lt. DC bias feedback circuit for MESFET bias stability
US6081006A (en) * 1998-08-13 2000-06-27 Cisco Systems, Inc. Reduced size field effect transistor
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP2005039084A (ja) * 2003-07-16 2005-02-10 Sony Corp バイアス回路および半導体装置の製造方法
US7948014B2 (en) 2005-05-26 2011-05-24 Nxp B.V. Electronic device
EP1793491A1 (fr) * 2005-12-02 2007-06-06 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Amplificateur avec une tension de polarisation de grille compensée
US7516428B2 (en) * 2006-05-11 2009-04-07 Sige Semiconductor (Europe) Limited Microwave circuit performance optimization by on-chip digital distribution of operating set-point
US7449956B2 (en) * 2006-06-30 2008-11-11 Nokia Corporation Semiconductor device
JP5245887B2 (ja) * 2009-02-09 2013-07-24 富士通セミコンダクター株式会社 増幅器
JP2011019047A (ja) * 2009-07-08 2011-01-27 Mitsubishi Electric Corp 半導体装置
RU2641617C1 (ru) * 2016-10-07 2018-01-18 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3215861A (en) * 1960-06-22 1965-11-02 Rca Corp Binary inverter circuit employing field effect transistors
JPS5595329A (en) * 1979-01-12 1980-07-19 Matsushita Electric Ind Co Ltd Preparation of semiconductor device
JPS56663A (en) * 1979-06-15 1981-01-07 Hitachi Ltd Random logic circuit inspecting unit
JPS5693355A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Semiconductor device
JPS57149795A (en) * 1981-03-12 1982-09-16 Casio Computer Co Ltd Soldering method and device
JPS59117168A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体装置
JPS59224175A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタ
CA1201538A (fr) * 1983-07-25 1986-03-04 Ajit G. Rode Methode de fabrication de transistors a effet de champ
FR2558659B1 (fr) * 1984-01-20 1986-04-25 Thomson Csf Circuit de polarisation d'un transistor a effet de champ
JPS61272964A (ja) * 1985-05-28 1986-12-03 Fujitsu Ltd 半導体抵抗素子
FR2583221B1 (fr) * 1985-06-07 1987-07-31 Labo Electronique Physique Dispositif semiconducteur pour la realisation des capacites de decouplage placees entre l'alimentation et la masse des circuits integres
JPS6276681A (ja) * 1985-09-30 1987-04-08 Toshiba Corp マイクロ波集積回路装置
JPS62210663A (ja) * 1986-03-12 1987-09-16 Toshiba Corp マイクロ波集積回路装置
JPH01117168A (ja) * 1987-10-29 1989-05-10 Toshiba Corp 集積装置

Also Published As

Publication number Publication date
JPH0284764A (ja) 1990-03-26
FR2625368A1 (fr) 1989-06-30
GB2213320A (en) 1989-08-09
US4921814A (en) 1990-05-01
JPH0793410B2 (ja) 1995-10-09
GB2213320B (en) 1992-02-26
US4990973A (en) 1991-02-05

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse