KR910003822A - 초전도 다층회로 및 그 제조방법 - Google Patents

초전도 다층회로 및 그 제조방법

Info

Publication number
KR910003822A
KR910003822A KR1019900011266A KR900011266A KR910003822A KR 910003822 A KR910003822 A KR 910003822A KR 1019900011266 A KR1019900011266 A KR 1019900011266A KR 900011266 A KR900011266 A KR 900011266A KR 910003822 A KR910003822 A KR 910003822A
Authority
KR
South Korea
Prior art keywords
manufacturing
multilayer circuit
superconducting multilayer
superconducting
circuit
Prior art date
Application number
KR1019900011266A
Other languages
English (en)
Other versions
KR940002412B1 (ko
Inventor
쇼오지 시가
나까 히로 하라다
기요시 야마모드
고오기 사도오
Original Assignee
후루가와 덴기 고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후루가와 덴기 고오교오 가부시기가이샤 filed Critical 후루가와 덴기 고오교오 가부시기가이샤
Publication of KR910003822A publication Critical patent/KR910003822A/ko
Application granted granted Critical
Publication of KR940002412B1 publication Critical patent/KR940002412B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/742—Annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
KR1019900011266A 1989-07-25 1990-07-24 초전도 다층회로 및 그 제조방법 KR940002412B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-191956 1989-07-25
JP1191956A JPH0355889A (ja) 1989-07-25 1989-07-25 超電導多層回路の製造方法

Publications (2)

Publication Number Publication Date
KR910003822A true KR910003822A (ko) 1991-02-28
KR940002412B1 KR940002412B1 (ko) 1994-03-24

Family

ID=16283245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011266A KR940002412B1 (ko) 1989-07-25 1990-07-24 초전도 다층회로 및 그 제조방법

Country Status (5)

Country Link
US (1) US5194419A (ko)
EP (1) EP0410374B1 (ko)
JP (1) JPH0355889A (ko)
KR (1) KR940002412B1 (ko)
DE (1) DE69025237T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475838B1 (en) * 1990-09-10 1996-03-06 Sumitomo Electric Industries, Ltd. Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same
CA2054597C (en) * 1990-10-31 1997-08-19 Hiroshi Inada Superconducting circuit and a process for fabricating the same
DE69219816T2 (de) * 1991-03-11 1997-10-23 Sumitomo Electric Industries Supraleitende Dünnschicht mit mindestens einer isolierten Region, gebildet aus oxydisch supraleitendem Material und Verfahren zu ihrer Herstellung
JP2827572B2 (ja) * 1991-05-24 1998-11-25 日本電気株式会社 層状超伝導体回路とその製造方法
CA2084394C (en) * 1991-12-02 1997-06-24 Takao Nakamura Superconducting multilayer interconnection formed of oxide superconductor material and method for manufacturing the same
WO1994027329A1 (en) * 1993-05-14 1994-11-24 The University Of British Columbia Fabrication of oxide superconductor devices by impurity ion implantation
JPH07263767A (ja) 1994-01-14 1995-10-13 Trw Inc イオンインプランテーションを用いたプレーナ型の高温超伝導集積回路
US6188919B1 (en) 1999-05-19 2001-02-13 Trw Inc. Using ion implantation to create normal layers in superconducting-normal-superconducting Josephson junctions
US9073048B2 (en) * 2006-07-05 2015-07-07 Cataler Corporation Exhaust gas-purifying catalyst and method of manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0282360B1 (en) * 1987-03-12 1995-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing components of superconducting ceramic oxide materials
JPS63250880A (ja) * 1987-04-08 1988-10-18 Semiconductor Energy Lab Co Ltd 酸化物超電導材料
DE3854238T2 (de) * 1987-04-08 1996-03-21 Hitachi Ltd Verfahren zur Herstellung eines supraleitenden Elements.
JPH0634418B2 (ja) * 1987-09-07 1994-05-02 株式会社半導体エネルギー研究所 超電導素子の作製方法
DE3851462T2 (de) * 1987-05-18 1995-05-04 Sumitomo Electric Industries Verfahren zur Herstellung eines supraleitenden Materials des Oxydverbundtyps.
JPS63291436A (ja) * 1987-05-25 1988-11-29 Hitachi Ltd 半導体装置の製造方法
JPS63304678A (ja) * 1987-06-03 1988-12-12 Fujikura Ltd 酸化物超電導回路の製造方法
DE3889015T2 (de) * 1987-06-22 1994-10-13 Sumitomo Electric Industries Verfahren zur Herstellung einer supraleitenden Schaltung.
JPS6443916A (en) * 1987-08-08 1989-02-16 Mitsubishi Electric Corp Characteristic control for compound system superconductor
JPS6489342A (en) * 1987-09-29 1989-04-03 Sony Corp Manufacture of semiconductor device
JPH01181444A (ja) * 1988-01-08 1989-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH01183138A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd 半導体装置
JPH01250880A (ja) * 1988-03-31 1989-10-05 Hoya Corp 角速度計
EP0358879A3 (en) * 1988-09-13 1991-02-27 Hewlett-Packard Company Method of making high density interconnects

Also Published As

Publication number Publication date
EP0410374B1 (en) 1996-02-07
EP0410374A2 (en) 1991-01-30
KR940002412B1 (ko) 1994-03-24
JPH0355889A (ja) 1991-03-11
DE69025237T2 (de) 1996-07-25
DE69025237D1 (de) 1996-03-21
US5194419A (en) 1993-03-16
EP0410374A3 (en) 1991-07-03

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