FR2482818B1 - Circuit integre ceramique multicouche et son procede de fabrication - Google Patents

Circuit integre ceramique multicouche et son procede de fabrication

Info

Publication number
FR2482818B1
FR2482818B1 FR8108451A FR8108451A FR2482818B1 FR 2482818 B1 FR2482818 B1 FR 2482818B1 FR 8108451 A FR8108451 A FR 8108451A FR 8108451 A FR8108451 A FR 8108451A FR 2482818 B1 FR2482818 B1 FR 2482818B1
Authority
FR
France
Prior art keywords
manufacturing
integrated circuit
layer ceramic
ceramic integrated
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8108451A
Other languages
English (en)
Other versions
FR2482818A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTS Corp
Original Assignee
CTS Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CTS Corp filed Critical CTS Corp
Publication of FR2482818A1 publication Critical patent/FR2482818A1/fr
Application granted granted Critical
Publication of FR2482818B1 publication Critical patent/FR2482818B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
FR8108451A 1980-05-15 1981-04-28 Circuit integre ceramique multicouche et son procede de fabrication Expired FR2482818B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/149,968 US4320438A (en) 1980-05-15 1980-05-15 Multi-layer ceramic package

Publications (2)

Publication Number Publication Date
FR2482818A1 FR2482818A1 (fr) 1981-11-20
FR2482818B1 true FR2482818B1 (fr) 1985-06-07

Family

ID=22532569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8108451A Expired FR2482818B1 (fr) 1980-05-15 1981-04-28 Circuit integre ceramique multicouche et son procede de fabrication

Country Status (6)

Country Link
US (1) US4320438A (fr)
JP (1) JPS5717157A (fr)
CA (1) CA1154541A (fr)
DE (1) DE3119239A1 (fr)
FR (1) FR2482818B1 (fr)
GB (1) GB2077036B (fr)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423468A (en) * 1980-10-01 1983-12-27 Motorola, Inc. Dual electronic component assembly
JPS58446U (ja) * 1981-06-25 1983-01-05 富士通株式会社 混成集積回路装置
US4410927A (en) * 1982-01-21 1983-10-18 Olin Corporation Casing for an electrical component having improved strength and heat transfer characteristics
JPS58137221A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd ワイヤボンデイング装置
JPS59501564A (ja) * 1982-08-10 1984-08-30 ダウテイ・エレクトロニク・コンポーネンツ・リミテツド 電気回路ユニツト
US4682414A (en) * 1982-08-30 1987-07-28 Olin Corporation Multi-layer circuitry
US4513355A (en) * 1983-06-15 1985-04-23 Motorola, Inc. Metallization and bonding means and method for VLSI packages
US4920454A (en) * 1983-09-15 1990-04-24 Mosaic Systems, Inc. Wafer scale package system and header and method of manufacture thereof
JPS60138931A (ja) * 1983-12-27 1985-07-23 Mitsubishi Electric Corp 半導体集積回路装置
DE3409146A1 (de) * 1984-03-13 1985-09-19 Siemens AG, 1000 Berlin und 8000 München Optoelektronisches mudul
US4571451A (en) * 1984-06-04 1986-02-18 International Business Machines Corporation Method for routing electrical connections and resulting product
US4688150A (en) * 1984-06-15 1987-08-18 Texas Instruments Incorporated High pin count chip carrier package
US4593384A (en) * 1984-12-21 1986-06-03 Ncr Corporation Security device for the secure storage of sensitive data
JPS61239649A (ja) * 1985-04-13 1986-10-24 Fujitsu Ltd 高速集積回路パツケ−ジ
US4659931A (en) * 1985-05-08 1987-04-21 Grumman Aerospace Corporation High density multi-layered integrated circuit package
DE3538933A1 (de) * 1985-11-02 1987-05-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
FR2591801B1 (fr) * 1985-12-17 1988-10-14 Inf Milit Spatiale Aeronaut Boitier d'encapsulation d'un circuit electronique
US4821151A (en) * 1985-12-20 1989-04-11 Olin Corporation Hermetically sealed package
US4739443A (en) * 1985-12-30 1988-04-19 Olin Corporation Thermally conductive module
US4777615A (en) * 1986-02-28 1988-10-11 Scientific Computer Systems Corporation Backplane structure for a computer superpositioning scalar and vector operations
US4890153A (en) * 1986-04-04 1989-12-26 Fairchild Semiconductor Corporation Single bonding shelf, multi-row wire-bond finger layout for integrated circuit package
US4772820A (en) * 1986-09-11 1988-09-20 Copytele, Inc. Monolithic flat panel display apparatus
GB2197540B (en) * 1986-11-12 1991-04-17 Murata Manufacturing Co A circuit structure.
GB2199182A (en) * 1986-12-18 1988-06-29 Marconi Electronic Devices Multilayer circuit arrangement
IL85008A0 (en) * 1987-01-21 1988-06-30 Hughes Aircraft Co Method for connecting leadless chip packages and articles
US4731700A (en) * 1987-02-12 1988-03-15 Delco Electronics Corporation Semiconductor connection and crossover apparatus
US4868634A (en) * 1987-03-13 1989-09-19 Citizen Watch Co., Ltd. IC-packaged device
US5016085A (en) * 1988-03-04 1991-05-14 Hughes Aircraft Company Hermetic package for integrated circuit chips
US4860442A (en) * 1988-11-28 1989-08-29 Kulite Semiconductor Methods for mounting components on convoluted three-dimensional structures
US5231304A (en) * 1989-07-27 1993-07-27 Grumman Aerospace Corporation Framed chip hybrid stacked layer assembly
US5025114A (en) * 1989-10-30 1991-06-18 Olin Corporation Multi-layer lead frames for integrated circuit packages
US5067004A (en) * 1989-12-13 1991-11-19 Digital Equipment Corporation Module for interconnecting integrated circuits
US5159750A (en) * 1989-12-20 1992-11-03 National Semiconductor Corporation Method of connecting an IC component with another electrical component
US5015207A (en) * 1989-12-28 1991-05-14 Isotronics, Inc. Multi-path feed-thru lead and method for formation thereof
US5031069A (en) * 1989-12-28 1991-07-09 Sundstrand Corporation Integration of ceramic capacitor
JP2799472B2 (ja) * 1990-05-31 1998-09-17 イビデン株式会社 電子部品搭載用基板
JPH0487361A (ja) * 1990-07-31 1992-03-19 Sanyo Electric Co Ltd 混成集積回路装置
JPH0487357A (ja) * 1990-07-31 1992-03-19 Sanyo Electric Co Ltd 混成集積回路の製造方法
JPH0487360A (ja) * 1990-07-31 1992-03-19 Sanyo Electric Co Ltd 混成集積回路装置
US5093708A (en) * 1990-08-20 1992-03-03 Grumman Aerospace Corporation Multilayer integrated circuit module
US5175397A (en) * 1990-12-24 1992-12-29 Westinghouse Electric Corp. Integrated circuit chip package
JPH07114218B2 (ja) * 1991-01-09 1995-12-06 株式会社東芝 微小箇所の電気接続方法及び該方法により形成された半導体装置
KR940006427Y1 (ko) * 1991-04-12 1994-09-24 윤광렬 독서용 확대경
US5128749A (en) * 1991-04-08 1992-07-07 Grumman Aerospace Corporation Fused high density multi-layer integrated circuit module
US5227583A (en) * 1991-08-20 1993-07-13 Microelectronic Packaging America Ceramic package and method for making same
US5209798A (en) * 1991-11-22 1993-05-11 Grunman Aerospace Corporation Method of forming a precisely spaced stack of substrate layers
AU4242693A (en) * 1992-05-11 1993-12-13 Nchip, Inc. Stacked devices for multichip modules
US5629840A (en) * 1992-05-15 1997-05-13 Digital Equipment Corporation High powered die with bus bars
US5422435A (en) * 1992-05-22 1995-06-06 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
EP0587144B1 (fr) * 1992-09-08 1999-06-09 Seiko Epson Corporation Dispositif d'affichage à cristal liquide, structure et méthode pour le montage de circuits semi-conducteurs et dispositif d'impression électronique
US5397861A (en) * 1992-10-21 1995-03-14 Mupac Corporation Electrical interconnection board
US5777265A (en) * 1993-01-21 1998-07-07 Intel Corporation Multilayer molded plastic package design
US5325268A (en) * 1993-01-28 1994-06-28 National Semiconductor Corporation Interconnector for a multi-chip module or package
JP3260941B2 (ja) * 1993-06-18 2002-02-25 株式会社日立製作所 多層配線基板および多層配線基板の製造方法
US5455385A (en) * 1993-06-28 1995-10-03 Harris Corporation Multilayer LTCC tub architecture for hermetically sealing semiconductor die, external electrical access for which is provided by way of sidewall recesses
EP0658937A1 (fr) * 1993-12-08 1995-06-21 Hughes Aircraft Company Empilement vertical de circuits intégrés ayant des supports discrets fabriqués à partir de bandes diélectriques
JP3094069B2 (ja) * 1993-12-24 2000-10-03 日本特殊陶業株式会社 セラミックパッケージ本体の製造方法
JP2988243B2 (ja) * 1994-03-16 1999-12-13 株式会社日立製作所 パワー混成集積回路装置
WO1995031826A1 (fr) * 1994-05-17 1995-11-23 Olin Corporation Boitier electronique presentant des proprietes electriques ameliorees
US5579207A (en) * 1994-10-20 1996-11-26 Hughes Electronics Three-dimensional integrated circuit stacking
DE4438449A1 (de) * 1994-10-28 1996-07-04 Sibet Gmbh Sican Forschungs Un Verfahren zur direkten Kontaktierung elektronischer Bauelemente mit einem Träger und direkt kontaktierbare Bauelemente hierzu
US5856235A (en) * 1995-04-12 1999-01-05 Northrop Grumman Corporation Process of vacuum annealing a thin film metallization on high purity alumina
US5613861A (en) * 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
US6255601B1 (en) * 1997-04-01 2001-07-03 Applied Materials, Inc. Conductive feedthrough for a ceramic body and method of fabricating same
US5944537A (en) * 1997-12-15 1999-08-31 Xerox Corporation Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices
US5979892A (en) * 1998-05-15 1999-11-09 Xerox Corporation Controlled cilia for object manipulation
US20070245553A1 (en) * 1999-05-27 2007-10-25 Chong Fu C Fine pitch microfabricated spring contact structure & method
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US7382142B2 (en) * 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US6799976B1 (en) * 1999-07-28 2004-10-05 Nanonexus, Inc. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US6710609B2 (en) * 2002-07-15 2004-03-23 Nanonexus, Inc. Mosaic decal probe
US7247035B2 (en) * 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US6812718B1 (en) * 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US6213789B1 (en) 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US20050068054A1 (en) * 2000-05-23 2005-03-31 Sammy Mok Standardized layout patterns and routing structures for integrated circuit wafer probe card assemblies
US7579848B2 (en) * 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
ATE311604T1 (de) 2000-06-20 2005-12-15 Nanonexus Inc Testsystem von integrierten schaltungen
US6790760B1 (en) 2000-07-21 2004-09-14 Agere Systems Inc. Method of manufacturing an integrated circuit package
US6465882B1 (en) 2000-07-21 2002-10-15 Agere Systems Guardian Corp. Integrated circuit package having partially exposed conductive layer
KR20040044459A (ko) * 2001-08-24 2004-05-28 나노넥서스, 인코포레이티드 스퍼터링된 필름에 균일한 등방성 응력을 생성하기 위한방법 및 장치
US7030469B2 (en) 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
KR100589361B1 (ko) * 2003-10-16 2006-06-14 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
US20060074836A1 (en) * 2004-09-03 2006-04-06 Biowisdom Limited System and method for graphically displaying ontology data
DE102010046963A1 (de) 2010-09-29 2012-03-29 Infineon Technologies Ag Multi-Chip Package
KR101544844B1 (ko) 2014-02-28 2015-08-20 김형익 와이어드 러버 컨택트 및 그 제조방법
WO2015130091A1 (fr) * 2014-02-28 2015-09-03 주식회사 화우로 Contact en caoutchouc câblé et son procédé de fabrication
KR102447435B1 (ko) * 2016-03-11 2022-09-23 삼성전자주식회사 Emi 감소를 위한 전력 전송 네트워크를 포함하는 기판과 이를 포함하는 장치들
WO2019207884A1 (fr) * 2018-04-26 2019-10-31 京セラ株式会社 Substrat pour montage d'élément électronique, dispositif électronique et module électronique

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202925C (fr) * 1969-04-30 1900-01-01
DE1250009B (fr) * 1962-07-28
US3436604A (en) * 1966-04-25 1969-04-01 Texas Instruments Inc Complex integrated circuit array and method for fabricating same
US3436606A (en) * 1967-04-03 1969-04-01 Texas Instruments Inc Packaged multilead semiconductor device with improved jumper connection
JPS5128829B1 (fr) * 1968-10-21 1976-08-21
US3676748A (en) * 1970-04-01 1972-07-11 Fuji Electrochemical Co Ltd Frame structures for electronic circuits
US3611059A (en) * 1970-06-11 1971-10-05 Rca Corp Transistor assembly
JPS5116258B2 (fr) * 1971-10-30 1976-05-22
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
US3926746A (en) * 1973-10-04 1975-12-16 Minnesota Mining & Mfg Electrical interconnection for metallized ceramic arrays
GB1539470A (en) * 1975-11-13 1979-01-31 Tektronix Inc Electrical connector
US4109377A (en) * 1976-02-03 1978-08-29 International Business Machines Corporation Method for preparing a multilayer ceramic

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CA1154541A (fr) 1983-09-27
JPS5717157A (en) 1982-01-28
GB2077036A (en) 1981-12-09
GB2077036B (en) 1984-01-25
FR2482818A1 (fr) 1981-11-20
DE3119239A1 (de) 1982-06-16
US4320438A (en) 1982-03-16

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