FR2623320B1 - Memoire de type dynamique - Google Patents

Memoire de type dynamique

Info

Publication number
FR2623320B1
FR2623320B1 FR8815039A FR8815039A FR2623320B1 FR 2623320 B1 FR2623320 B1 FR 2623320B1 FR 8815039 A FR8815039 A FR 8815039A FR 8815039 A FR8815039 A FR 8815039A FR 2623320 B1 FR2623320 B1 FR 2623320B1
Authority
FR
France
Prior art keywords
type memory
dynamic type
dynamic
memory
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8815039A
Other languages
English (en)
Other versions
FR2623320A1 (fr
Inventor
Watanabe Makoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62291297A external-priority patent/JPH01133288A/ja
Priority claimed from JP62291298A external-priority patent/JP2623612B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2623320A1 publication Critical patent/FR2623320A1/fr
Application granted granted Critical
Publication of FR2623320B1 publication Critical patent/FR2623320B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
FR8815039A 1987-11-18 1988-11-18 Memoire de type dynamique Expired - Fee Related FR2623320B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62291297A JPH01133288A (ja) 1987-11-18 1987-11-18 メモリ
JP62291298A JP2623612B2 (ja) 1987-11-18 1987-11-18 ダイナミックメモリ

Publications (2)

Publication Number Publication Date
FR2623320A1 FR2623320A1 (fr) 1989-05-19
FR2623320B1 true FR2623320B1 (fr) 1993-10-15

Family

ID=26558480

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8815039A Expired - Fee Related FR2623320B1 (fr) 1987-11-18 1988-11-18 Memoire de type dynamique

Country Status (4)

Country Link
US (1) US5280448A (fr)
FR (1) FR2623320B1 (fr)
GB (1) GB2212637B (fr)
NL (1) NL8802857A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5517609A (en) * 1990-08-06 1996-05-14 Texas Instruments Incorporated Graphics display system using tiles of data
KR100300638B1 (ko) * 1993-03-16 2001-11-22 가나이 쓰도무 고속반도체기억장치및그것을사용한데이타처리시스템
JPH0784870A (ja) * 1993-06-30 1995-03-31 Sanyo Electric Co Ltd 記憶回路
US5442748A (en) * 1993-10-29 1995-08-15 Sun Microsystems, Inc. Architecture of output switching circuitry for frame buffer
JPH08172169A (ja) * 1994-12-16 1996-07-02 Toshiba Microelectron Corp 半導体記憶装置
US5499218A (en) * 1995-01-31 1996-03-12 Goldstar Electron Co., Ltd. Method for driving bit line selecting signals
JP3603440B2 (ja) * 1996-01-12 2004-12-22 富士通株式会社 半導体記憶装置
US7817470B2 (en) 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958689A (ja) * 1982-09-28 1984-04-04 Fujitsu Ltd 半導体記憶装置
US4599709A (en) * 1984-02-17 1986-07-08 At&T Bell Laboratories Byte organized static memory
US4745577A (en) * 1984-11-20 1988-05-17 Fujitsu Limited Semiconductor memory device with shift registers for high speed reading and writing
DE3543911A1 (de) * 1984-12-14 1986-06-26 Mitsubishi Denki K.K., Tokio/Tokyo Digitale verzoegerungseinheit
JPS61160898A (ja) * 1985-01-05 1986-07-21 Fujitsu Ltd 半導体記憶装置
JPS61220189A (ja) * 1985-03-27 1986-09-30 Toshiba Corp 記憶装置の制御方式
US4725987A (en) * 1985-10-23 1988-02-16 Eastman Kodak Company Architecture for a fast frame store using dynamic RAMS
US4817054A (en) * 1985-12-04 1989-03-28 Advanced Micro Devices, Inc. High speed RAM based data serializers
JPH0642313B2 (ja) * 1985-12-20 1994-06-01 日本電気株式会社 半導体メモリ
JPS62194561A (ja) * 1986-02-21 1987-08-27 Toshiba Corp 半導体記憶装置
JPH0740430B2 (ja) * 1986-07-04 1995-05-01 日本電気株式会社 メモリ装置
JPH0612616B2 (ja) * 1986-08-13 1994-02-16 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
JPS63282997A (ja) * 1987-05-15 1988-11-18 Mitsubishi Electric Corp ブロツクアクセスメモリ
JPH0793002B2 (ja) * 1987-06-04 1995-10-09 日本電気株式会社 メモリ集積回路

Also Published As

Publication number Publication date
GB2212637B (en) 1992-03-18
US5280448A (en) 1994-01-18
NL8802857A (nl) 1989-06-16
GB2212637A (en) 1989-07-26
FR2623320A1 (fr) 1989-05-19
GB8826940D0 (en) 1988-12-21

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Legal Events

Date Code Title Description
ST Notification of lapse