FR2602503B1 - Procede et appareillage pour la purification du silicium - Google Patents
Procede et appareillage pour la purification du siliciumInfo
- Publication number
- FR2602503B1 FR2602503B1 FR8710926A FR8710926A FR2602503B1 FR 2602503 B1 FR2602503 B1 FR 2602503B1 FR 8710926 A FR8710926 A FR 8710926A FR 8710926 A FR8710926 A FR 8710926A FR 2602503 B1 FR2602503 B1 FR 2602503B1
- Authority
- FR
- France
- Prior art keywords
- silicon
- crucible
- molten silicon
- introducing
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
CE PROCEDE CONSISTE A FAIRE FONDRE DU SILICIUM BRUT, A MAINTENIR LE SILICIUM FONDU 10 AU-DESSUS DE SA TEMPERATURE DE SOLIDIFICATION DANS UNE ATMOSPHERE DE GAZ INERTE, ET A FAIRE TOURNER UN ELEMENT DE REFROIDISSEMENT ROTATIF CREUX 12 EN LE MAINTENANT IMMERGE DANS LE SILICIUM FONDU 10, TOUT EN INTRODUISANT UN FLUIDE DE REFROIDISSEMENT DANS L'ELEMENT 12 POUR FAIRE CRISTALLISER LE SILICIUM DE PURETE ELEVEE 15 SUR LA SURFACE EXTERIEURE DUDIT ELEMENT 12. L'APPAREILLAGE POUR LA MISE EN OEUVRE DE CE PROCEDE COMPREND: UN FOUR DE FUSION 1 EQUIPE D'UN DISPOSITIF DE CHAUFFAGE 5; UN CREUSET 2 DISPOSE A L'INTERIEUR DU FOUR DE FUSION 1; UN MOYEN 4, 8 POUR MAINTENIR DANS UNE ATMOSPHERE DE GAZ INERTE LE SILICIUM FONDU 10 PLACE DANS LE CREUSET 2; UN ELEMENT DE REFROIDISSEMENT ROTATIF CREUX 12, DISPOSE DANS LE CREUSET 2; ET UN MOYEN 13 POUR INTRODUIRE UN FLUIDE DE REFROIDISSEMENT A L'INTERIEUR DE L'ELEMENT DE REFROIDISSEMENT 12.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61186646A JPH0753569B2 (ja) | 1986-08-07 | 1986-08-07 | ケイ素の精製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2602503A1 FR2602503A1 (fr) | 1988-02-12 |
FR2602503B1 true FR2602503B1 (fr) | 1991-01-04 |
Family
ID=16192229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8710926A Expired - Lifetime FR2602503B1 (fr) | 1986-08-07 | 1987-07-31 | Procede et appareillage pour la purification du silicium |
Country Status (5)
Country | Link |
---|---|
US (1) | US4747906A (fr) |
JP (1) | JPH0753569B2 (fr) |
DE (1) | DE3726171A1 (fr) |
FR (1) | FR2602503B1 (fr) |
NO (1) | NO174844C (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997003922A1 (fr) * | 1994-01-10 | 1997-02-06 | Showa Aluminum Corporation | Procede pour produire du silicium tres pur |
CN1083396C (zh) * | 1995-07-14 | 2002-04-24 | 昭和电工株式会社 | 高纯度硅的制造方法 |
DE69616686T2 (de) * | 1995-08-04 | 2002-08-14 | Sharp K.K., Osaka | Vorrichtung zum Reinigen von Metallen |
US6368403B1 (en) | 1997-08-28 | 2002-04-09 | Crystal Systems, Inc. | Method and apparatus for purifying silicon |
US5972107A (en) * | 1997-08-28 | 1999-10-26 | Crystal Systems, Inc. | Method for purifying silicon |
FR2827592B1 (fr) * | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
JP4159994B2 (ja) * | 2002-02-04 | 2008-10-01 | シャープ株式会社 | シリコンの精製方法、シリコン精製用スラグおよび精製されたシリコン |
DE10358452B4 (de) * | 2003-12-13 | 2005-09-15 | Fiolitakis, Emmanuel, Dr. | Verfahren zur Herstellung von hochreinem Silicium über die Calciumsilicid-Route |
JP2005281085A (ja) * | 2004-03-30 | 2005-10-13 | Nippon Steel Corp | 黒鉛製るつぼ |
JP4115432B2 (ja) * | 2004-07-14 | 2008-07-09 | シャープ株式会社 | 金属の精製方法 |
JP4713892B2 (ja) * | 2005-01-25 | 2011-06-29 | 新日鉄マテリアルズ株式会社 | シリコンのスラグ精錬用ルツボ |
NO326797B1 (no) * | 2005-06-10 | 2009-02-16 | Elkem As | Fremgangsmate og apparat for raffinering av smeltet materiale |
US20080134964A1 (en) * | 2006-12-06 | 2008-06-12 | Evergreen Solar, Inc. | System and Method of Forming a Crystal |
UA97691C2 (ru) * | 2007-09-13 | 2012-03-12 | Силисиум Беканкур Инк. | Способ получения твердого поликристаллического кремния высокой чистоты |
JP5187819B2 (ja) * | 2007-11-01 | 2013-04-24 | シャープ株式会社 | シリコン精製装置およびシリコン精製方法 |
CN101477949A (zh) * | 2008-01-04 | 2009-07-08 | 陈科 | 硅片和其制造方法及装置 |
CN102712480B (zh) * | 2009-10-19 | 2016-06-01 | 吉坤日矿日石金属株式会社 | 硅或硅合金熔炼炉 |
CN103094376A (zh) * | 2011-11-01 | 2013-05-08 | 智盛全球股份有限公司 | 复合式太阳能电池的多晶硅基板及其太阳能电池 |
KR101407403B1 (ko) * | 2012-02-02 | 2014-06-17 | 한국과학기술연구원 | 막 증류용 분리막 모듈 장치 |
JP5179674B1 (ja) * | 2012-02-14 | 2013-04-10 | シャープ株式会社 | シリコン精製装置およびシリコン精製方法 |
CN102745695A (zh) * | 2012-06-08 | 2012-10-24 | 兰州理工大学 | 用于从高硅铝合金提取硅的装置及其提取方法 |
CN102992327B (zh) * | 2012-12-17 | 2014-07-09 | 青岛隆盛晶硅科技有限公司 | 一种凝固坩埚旋转式电子束熔炼提纯多晶硅的方法及设备 |
CN103833038A (zh) * | 2014-03-08 | 2014-06-04 | 中国科学院等离子体物理研究所 | 一种从硅合金熔体中半连续结晶提纯硅的方法 |
CN112108086B (zh) * | 2020-09-24 | 2022-06-21 | 上海理工大学 | 一种胶体粒子体系的定向凝固偏析装置及方法 |
EP4082966A1 (fr) | 2021-04-26 | 2022-11-02 | Ferroglobe Innovation, S.L. | Procédé d'obtention de silicium métallique purifié |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3543531A (en) * | 1967-05-08 | 1970-12-01 | Clyde C Adams | Freeze refining apparatus |
DE2925679A1 (de) * | 1979-06-26 | 1981-01-22 | Heliotronic Gmbh | Verfahren zur herstellung von siliciumstaeben |
US4417911A (en) * | 1981-02-27 | 1983-11-29 | Associated Electrical Industries Limited | Manufacture of optical fibre preforms |
US4469512A (en) * | 1982-07-29 | 1984-09-04 | Showa Aluminum Corporation | Process for producing high-purity aluminum |
DE3403131A1 (de) * | 1984-01-30 | 1985-08-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum reinigen von im lichtbogenofen erzeugtem silicium |
-
1986
- 1986-08-07 JP JP61186646A patent/JPH0753569B2/ja not_active Expired - Fee Related
-
1987
- 1987-07-27 US US07/077,921 patent/US4747906A/en not_active Expired - Lifetime
- 1987-07-31 FR FR8710926A patent/FR2602503B1/fr not_active Expired - Lifetime
- 1987-08-06 DE DE19873726171 patent/DE3726171A1/de active Granted
- 1987-08-06 NO NO873299A patent/NO174844C/no not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3726171A1 (de) | 1988-02-11 |
JPS6345112A (ja) | 1988-02-26 |
NO174844B (no) | 1994-04-11 |
DE3726171C2 (fr) | 1992-03-26 |
US4747906A (en) | 1988-05-31 |
NO174844C (no) | 1994-07-20 |
FR2602503A1 (fr) | 1988-02-12 |
JPH0753569B2 (ja) | 1995-06-07 |
NO873299L (no) | 1988-02-08 |
NO873299D0 (no) | 1987-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2602503B1 (fr) | Procede et appareillage pour la purification du silicium | |
CA1155735A (fr) | Methode de fabrication de tiges de silicone | |
US6334899B1 (en) | Continuous crystal plate growth apparatus | |
HUT51685A (en) | Apparatus for increasing form monocristals of optically transparent metal compound with high melting point | |
CA1263293A (fr) | Methode et dispositif de fabrication cyclique d'articles faconnes en silicone | |
US6402840B1 (en) | Crystal growth employing embedded purification chamber | |
US4188201A (en) | Apparatus for forming an ingot in a rotating housing | |
EP0465721A3 (en) | Melting and pouring furnace | |
JPS58194727A (ja) | 高密度炭素及び水素ガスの製造方法 | |
ATE283746T1 (de) | Verfahren und vorrichtung zum herstellen gerichtet erstarrter guss-stücke | |
JPS6272464A (ja) | 金属溶融物の指向的な固化方法 | |
GB870408A (en) | Treatment of silicon | |
ATE265555T1 (de) | Vorrichtung zum heisstauchen | |
EP0055310A1 (fr) | Procédé et dispositif pour la coulée continue du silicium | |
GB2213403A (en) | Method and apparatus for growing CdxHg1-xTe | |
CN218673115U (zh) | 加热体及包含该加热体的水平区熔炉 | |
JPS57183393A (en) | Apparatus for growing single crystal | |
Ursu et al. | Growth of large ultratransparent KCl single crystals | |
RU2282522C2 (ru) | Способ центробежного литья металла в горизонтальной плоскости | |
RU2034078C1 (ru) | Способ получения металлического скандия | |
CA1194384A (fr) | Methode et dispositif de production d'articles en silicone coule | |
JPH0449171Y2 (fr) | ||
GB1382353A (en) | Method of heat treating a material | |
JPS6469581A (en) | Production of reaction tube made of silicon carbide | |
JPS57200285A (en) | Device for growing crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |