GB1382353A - Method of heat treating a material - Google Patents

Method of heat treating a material

Info

Publication number
GB1382353A
GB1382353A GB3539372A GB3539372A GB1382353A GB 1382353 A GB1382353 A GB 1382353A GB 3539372 A GB3539372 A GB 3539372A GB 3539372 A GB3539372 A GB 3539372A GB 1382353 A GB1382353 A GB 1382353A
Authority
GB
United Kingdom
Prior art keywords
container
heat
chamber
medium
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3539372A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1382353A publication Critical patent/GB1382353A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Furnace Details (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Resistance Heating (AREA)

Abstract

1382353 Crystallizing from a melt; zone melting PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 28 July 1972 [31 July 1971] 35393/72 Heading B1S [Also in Division F4] Crystals including monocrystals are made by passing a temperature gradient through a melt in a vessel e.g. a crucible, located in a chamber the walls of which are heat-transmitting and surrounded by a container spaced from the chamber, the said temperature gradient being formed by establishing an interface between vapourized heat transfer medium and a gas inert to the medium. The surrounding container which is insulated contains a heattransmitting wall through which heat is passed to vapourize a heat-transfer medium contained in the space between the chamber and the crucible. The movement of the interface is controlled by increasing or decreasing the amount of heat supplied to the transfer medium. The transfer medium may be potassium, sodium, lithium, cadmium, caesium, an alloy or an organic compound e.g. a hydrocarbon. The inert gas may be argon, nitrogen, neon, helium or air under normal atmospheric pressure provided it is not reactive with the medium. The inert gas is always at constant pressure. If desired, in the space between the chamber and container, a porous mass having a capillary structure may be present connecting the heat transmission walls of the chamber and container. The porous mass may be compressed steel wool, wire gauze, or a network of glass fibres. As shown, a tubular treatment chamber 1 is bounded by a heat transmission wall 2, of container 3. The latter contains a heat transmission wall 4 through which thermal energy from heating coil 5 is supplied to the container. The power supplied to coil 5 is controlled by device 6. The container 3, insulated from the surroundings by layer 7, comprises a gas buffer space 8 in communication with gas storage container 9 containing a control valve 11. The container 3, contains the medium e.g. sodium, and in operation the location of the interface 10, is determined by the power of the heating coil 5. The material to be crystal-. lized is contained in vessel 12, suspended from a frame 13. In modifications, the container may have its longitudinal axis horizontal and space 8, as the flow back of the medium is not under gravity, filled with a porous mass preferably compressed steel wool. Also two chambers may be present in the container (Figure 6 not shown). The apparatus may also be used for zone-melting purification.
GB3539372A 1971-07-31 1972-07-28 Method of heat treating a material Expired GB1382353A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7110626A NL7110626A (en) 1971-07-31 1971-07-31

Publications (1)

Publication Number Publication Date
GB1382353A true GB1382353A (en) 1975-01-29

Family

ID=19813727

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3539372A Expired GB1382353A (en) 1971-07-31 1972-07-28 Method of heat treating a material

Country Status (9)

Country Link
JP (1) JPS5332359B1 (en)
AT (1) AT354983B (en)
CA (1) CA982914A (en)
DE (1) DE2234119C3 (en)
FR (1) FR2148107B1 (en)
GB (1) GB1382353A (en)
IT (1) IT961760B (en)
NL (1) NL7110626A (en)
SE (1) SE374870B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116428902A (en) * 2023-06-09 2023-07-14 苏州晨晖智能设备有限公司 Single crystal furnace double-phase composite heat exchanger, single crystal furnace and heat exchange method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
DE102013222845A1 (en) * 2013-11-11 2015-05-13 Zf Friedrichshafen Ag Anticorrosive agent container

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116428902A (en) * 2023-06-09 2023-07-14 苏州晨晖智能设备有限公司 Single crystal furnace double-phase composite heat exchanger, single crystal furnace and heat exchange method
CN116428902B (en) * 2023-06-09 2023-08-22 苏州晨晖智能设备有限公司 Single crystal furnace double-phase composite heat exchanger, single crystal furnace and heat exchange method

Also Published As

Publication number Publication date
ATA658772A (en) 1979-07-15
JPS5332359B1 (en) 1978-09-07
IT961760B (en) 1973-12-10
DE2234119C3 (en) 1980-11-27
DE2234119B2 (en) 1980-04-10
CA982914A (en) 1976-02-03
SE374870B (en) 1975-03-24
NL7110626A (en) 1973-02-02
AT354983B (en) 1980-02-11
DE2234119A1 (en) 1973-02-08
FR2148107B1 (en) 1976-08-13
FR2148107A1 (en) 1973-03-11

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee