FR2464564A1 - Batterie solaire au silicium amorphe - Google Patents
Batterie solaire au silicium amorphe Download PDFInfo
- Publication number
- FR2464564A1 FR2464564A1 FR8006666A FR8006666A FR2464564A1 FR 2464564 A1 FR2464564 A1 FR 2464564A1 FR 8006666 A FR8006666 A FR 8006666A FR 8006666 A FR8006666 A FR 8006666A FR 2464564 A1 FR2464564 A1 FR 2464564A1
- Authority
- FR
- France
- Prior art keywords
- layer
- solar battery
- solar
- amorphous silicon
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000010348 incorporation Methods 0.000 claims abstract 2
- 239000011195 cermet Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 230000005855 radiation Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 229910003437 indium oxide Inorganic materials 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 229910001887 tin oxide Inorganic materials 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000005554 pickling Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- YXVFQADLFFNVDS-UHFFFAOYSA-N diammonium citrate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O YXVFQADLFFNVDS-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7051379A | 1979-08-28 | 1979-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2464564A1 true FR2464564A1 (fr) | 1981-03-06 |
| FR2464564B1 FR2464564B1 (enrdf_load_stackoverflow) | 1983-12-30 |
Family
ID=22095730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8006666A Granted FR2464564A1 (fr) | 1979-08-28 | 1980-03-26 | Batterie solaire au silicium amorphe |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5633889A (enrdf_load_stackoverflow) |
| DE (1) | DE3015362A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2464564A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2060251B (enrdf_load_stackoverflow) |
| MY (1) | MY8700193A (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
| JPS58139478A (ja) * | 1982-02-15 | 1983-08-18 | Agency Of Ind Science & Technol | アモルフアス太陽電池 |
| JPS58162073A (ja) * | 1982-03-23 | 1983-09-26 | Nippon Telegr & Teleph Corp <Ntt> | モノリシツクカスケ−ド形太陽電池 |
| JPS58171869A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| KR900004824B1 (ko) * | 1982-11-24 | 1990-07-07 | 가부시끼 가이샤 한도 다이 에네르기 겐뀨쇼 | 광전변환 장치 및 그 제조방법 |
| US4593152A (en) * | 1982-11-24 | 1986-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JPS60124882A (ja) * | 1983-12-09 | 1985-07-03 | Agency Of Ind Science & Technol | 太陽電池の製造方法 |
| JPH0314053Y2 (enrdf_load_stackoverflow) * | 1984-09-19 | 1991-03-28 | ||
| GB2177254B (en) * | 1985-07-05 | 1988-09-01 | Stc Plc | Testing integrated circuits |
| JPS61210681A (ja) * | 1986-02-20 | 1986-09-18 | Sanyo Electric Co Ltd | 集積型光起電力装置の製造方法 |
| JPS63100858U (enrdf_load_stackoverflow) * | 1986-12-19 | 1988-06-30 | ||
| JPS63157483A (ja) * | 1986-12-22 | 1988-06-30 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
| JPH0254972A (ja) * | 1988-08-19 | 1990-02-23 | Sanyo Electric Co Ltd | 光起電力装置 |
| JP6739072B2 (ja) * | 2015-10-15 | 2020-08-12 | 国立研究開発法人産業技術総合研究所 | 熱電変換モジュールの作製方法 |
| CN106935662B (zh) * | 2017-02-28 | 2018-08-21 | 南通壹选工业设计有限公司 | 一种太阳能发电组件 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH262407A (fr) * | 1942-07-20 | 1949-06-30 | Adam Veszi Gabor | Batterie de cellules photo-électriques et procédé de fabrication de cette batterie. |
| US2949498A (en) * | 1955-10-31 | 1960-08-16 | Texas Instruments Inc | Solar energy converter |
| US3049622A (en) * | 1961-03-24 | 1962-08-14 | Edwin R Ahlstrom | Surface-barrier photocells |
| US3186873A (en) * | 1959-09-21 | 1965-06-01 | Bendix Corp | Energy converter |
| US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
| FR2266306A1 (enrdf_load_stackoverflow) * | 1974-03-29 | 1975-10-24 | Messerschmitt Boelkow Blohm | |
| US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS493235A (enrdf_load_stackoverflow) * | 1972-04-22 | 1974-01-12 | ||
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| JPS5912030B2 (ja) * | 1976-04-20 | 1984-03-19 | 松下電器産業株式会社 | 半導体光電変換装置 |
| JPS52146190A (en) * | 1976-05-28 | 1977-12-05 | Japan Solar Energy | Semiconductor photoelectric converter |
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| GB1575888A (en) * | 1977-09-08 | 1980-10-01 | Photon Power Inc | Solar cell array |
| IT1194594B (it) * | 1979-04-19 | 1988-09-22 | Rca Corp | Celle solari di silicio amorfo con giunzioni in tandem |
-
1980
- 1980-03-26 FR FR8006666A patent/FR2464564A1/fr active Granted
- 1980-04-22 DE DE19803015362 patent/DE3015362A1/de active Granted
- 1980-04-23 JP JP5486480A patent/JPS5633889A/ja active Granted
- 1980-04-24 GB GB8013498A patent/GB2060251B/en not_active Expired
-
1987
- 1987-12-30 MY MY193/87A patent/MY8700193A/xx unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH262407A (fr) * | 1942-07-20 | 1949-06-30 | Adam Veszi Gabor | Batterie de cellules photo-électriques et procédé de fabrication de cette batterie. |
| US2949498A (en) * | 1955-10-31 | 1960-08-16 | Texas Instruments Inc | Solar energy converter |
| US3186873A (en) * | 1959-09-21 | 1965-06-01 | Bendix Corp | Energy converter |
| US3049622A (en) * | 1961-03-24 | 1962-08-14 | Edwin R Ahlstrom | Surface-barrier photocells |
| US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
| FR2266306A1 (enrdf_load_stackoverflow) * | 1974-03-29 | 1975-10-24 | Messerschmitt Boelkow Blohm | |
| US3977904A (en) * | 1974-03-29 | 1976-08-31 | Messerschmitt-Bolkow-Blohm Gmbh | Semi-conductor battery |
| US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
| FR2424632A1 (fr) * | 1978-04-24 | 1979-11-23 | Rca Corp | Perfectionnements apportes aux cellules solaires au silicium |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3015362C2 (enrdf_load_stackoverflow) | 1993-09-02 |
| JPH0147907B2 (enrdf_load_stackoverflow) | 1989-10-17 |
| GB2060251A (en) | 1981-04-29 |
| FR2464564B1 (enrdf_load_stackoverflow) | 1983-12-30 |
| JPS5633889A (en) | 1981-04-04 |
| DE3015362A1 (de) | 1981-03-19 |
| GB2060251B (en) | 1983-08-24 |
| MY8700193A (en) | 1987-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |