FR2464564B1 - - Google Patents

Info

Publication number
FR2464564B1
FR2464564B1 FR8006666A FR8006666A FR2464564B1 FR 2464564 B1 FR2464564 B1 FR 2464564B1 FR 8006666 A FR8006666 A FR 8006666A FR 8006666 A FR8006666 A FR 8006666A FR 2464564 B1 FR2464564 B1 FR 2464564B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8006666A
Other languages
French (fr)
Other versions
FR2464564A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2464564A1 publication Critical patent/FR2464564A1/fr
Application granted granted Critical
Publication of FR2464564B1 publication Critical patent/FR2464564B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
FR8006666A 1979-08-28 1980-03-26 Batterie solaire au silicium amorphe Granted FR2464564A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7051379A 1979-08-28 1979-08-28

Publications (2)

Publication Number Publication Date
FR2464564A1 FR2464564A1 (fr) 1981-03-06
FR2464564B1 true FR2464564B1 (enrdf_load_stackoverflow) 1983-12-30

Family

ID=22095730

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8006666A Granted FR2464564A1 (fr) 1979-08-28 1980-03-26 Batterie solaire au silicium amorphe

Country Status (5)

Country Link
JP (1) JPS5633889A (enrdf_load_stackoverflow)
DE (1) DE3015362A1 (enrdf_load_stackoverflow)
FR (1) FR2464564A1 (enrdf_load_stackoverflow)
GB (1) GB2060251B (enrdf_load_stackoverflow)
MY (1) MY8700193A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
JPS58139478A (ja) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol アモルフアス太陽電池
JPS58162073A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> モノリシツクカスケ−ド形太陽電池
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
KR900004824B1 (ko) * 1982-11-24 1990-07-07 가부시끼 가이샤 한도 다이 에네르기 겐뀨쇼 광전변환 장치 및 그 제조방법
US4593152A (en) * 1982-11-24 1986-06-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS60124882A (ja) * 1983-12-09 1985-07-03 Agency Of Ind Science & Technol 太陽電池の製造方法
JPH0314053Y2 (enrdf_load_stackoverflow) * 1984-09-19 1991-03-28
GB2177254B (en) * 1985-07-05 1988-09-01 Stc Plc Testing integrated circuits
JPS61210681A (ja) * 1986-02-20 1986-09-18 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
JPS63100858U (enrdf_load_stackoverflow) * 1986-12-19 1988-06-30
JPS63157483A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH0254972A (ja) * 1988-08-19 1990-02-23 Sanyo Electric Co Ltd 光起電力装置
JP6739072B2 (ja) * 2015-10-15 2020-08-12 国立研究開発法人産業技術総合研究所 熱電変換モジュールの作製方法
CN106935662B (zh) * 2017-02-28 2018-08-21 南通壹选工业设计有限公司 一种太阳能发电组件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH262407A (fr) * 1942-07-20 1949-06-30 Adam Veszi Gabor Batterie de cellules photo-électriques et procédé de fabrication de cette batterie.
US2949498A (en) * 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
US3186873A (en) * 1959-09-21 1965-06-01 Bendix Corp Energy converter
US3049622A (en) * 1961-03-24 1962-08-14 Edwin R Ahlstrom Surface-barrier photocells
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
JPS493235A (enrdf_load_stackoverflow) * 1972-04-22 1974-01-12
DE2415187C3 (de) * 1974-03-29 1979-10-11 Messerschmitt-Boelkow-Blohm Gmbh, 8000 Muenchen Halbleiterbatterie und Verfahren zu deren Herstellung
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5912030B2 (ja) * 1976-04-20 1984-03-19 松下電器産業株式会社 半導体光電変換装置
JPS52146190A (en) * 1976-05-28 1977-12-05 Japan Solar Energy Semiconductor photoelectric converter
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
GB1575888A (en) * 1977-09-08 1980-10-01 Photon Power Inc Solar cell array
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
IT1194594B (it) * 1979-04-19 1988-09-22 Rca Corp Celle solari di silicio amorfo con giunzioni in tandem

Also Published As

Publication number Publication date
DE3015362C2 (enrdf_load_stackoverflow) 1993-09-02
JPH0147907B2 (enrdf_load_stackoverflow) 1989-10-17
FR2464564A1 (fr) 1981-03-06
GB2060251A (en) 1981-04-29
JPS5633889A (en) 1981-04-04
DE3015362A1 (de) 1981-03-19
GB2060251B (en) 1983-08-24
MY8700193A (en) 1987-12-31

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Legal Events

Date Code Title Description
ST Notification of lapse