JPH0147907B2 - - Google Patents

Info

Publication number
JPH0147907B2
JPH0147907B2 JP55054864A JP5486480A JPH0147907B2 JP H0147907 B2 JPH0147907 B2 JP H0147907B2 JP 55054864 A JP55054864 A JP 55054864A JP 5486480 A JP5486480 A JP 5486480A JP H0147907 B2 JPH0147907 B2 JP H0147907B2
Authority
JP
Japan
Prior art keywords
layer
solar cell
solar
amorphous silicon
strips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55054864A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5633889A (en
Inventor
Jon Hanaku Josefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5633889A publication Critical patent/JPS5633889A/ja
Publication of JPH0147907B2 publication Critical patent/JPH0147907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP5486480A 1979-08-28 1980-04-23 Amorphous silicon solar battery Granted JPS5633889A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7051379A 1979-08-28 1979-08-28

Publications (2)

Publication Number Publication Date
JPS5633889A JPS5633889A (en) 1981-04-04
JPH0147907B2 true JPH0147907B2 (enrdf_load_stackoverflow) 1989-10-17

Family

ID=22095730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5486480A Granted JPS5633889A (en) 1979-08-28 1980-04-23 Amorphous silicon solar battery

Country Status (5)

Country Link
JP (1) JPS5633889A (enrdf_load_stackoverflow)
DE (1) DE3015362A1 (enrdf_load_stackoverflow)
FR (1) FR2464564A1 (enrdf_load_stackoverflow)
GB (1) GB2060251B (enrdf_load_stackoverflow)
MY (1) MY8700193A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
JPS58139478A (ja) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol アモルフアス太陽電池
JPS58162073A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> モノリシツクカスケ−ド形太陽電池
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
KR900004824B1 (ko) * 1982-11-24 1990-07-07 가부시끼 가이샤 한도 다이 에네르기 겐뀨쇼 광전변환 장치 및 그 제조방법
US4593152A (en) * 1982-11-24 1986-06-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS60124882A (ja) * 1983-12-09 1985-07-03 Agency Of Ind Science & Technol 太陽電池の製造方法
JPH0314053Y2 (enrdf_load_stackoverflow) * 1984-09-19 1991-03-28
GB2177254B (en) * 1985-07-05 1988-09-01 Stc Plc Testing integrated circuits
JPS61210681A (ja) * 1986-02-20 1986-09-18 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
JPS63100858U (enrdf_load_stackoverflow) * 1986-12-19 1988-06-30
JPS63157483A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH0254972A (ja) * 1988-08-19 1990-02-23 Sanyo Electric Co Ltd 光起電力装置
JP6739072B2 (ja) * 2015-10-15 2020-08-12 国立研究開発法人産業技術総合研究所 熱電変換モジュールの作製方法
CN106935662B (zh) * 2017-02-28 2018-08-21 南通壹选工业设计有限公司 一种太阳能发电组件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH262407A (fr) * 1942-07-20 1949-06-30 Adam Veszi Gabor Batterie de cellules photo-électriques et procédé de fabrication de cette batterie.
US2949498A (en) * 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
US3186873A (en) * 1959-09-21 1965-06-01 Bendix Corp Energy converter
US3049622A (en) * 1961-03-24 1962-08-14 Edwin R Ahlstrom Surface-barrier photocells
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
JPS493235A (enrdf_load_stackoverflow) * 1972-04-22 1974-01-12
DE2415187C3 (de) * 1974-03-29 1979-10-11 Messerschmitt-Boelkow-Blohm Gmbh, 8000 Muenchen Halbleiterbatterie und Verfahren zu deren Herstellung
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5912030B2 (ja) * 1976-04-20 1984-03-19 松下電器産業株式会社 半導体光電変換装置
JPS52146190A (en) * 1976-05-28 1977-12-05 Japan Solar Energy Semiconductor photoelectric converter
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
GB1575888A (en) * 1977-09-08 1980-10-01 Photon Power Inc Solar cell array
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
IT1194594B (it) * 1979-04-19 1988-09-22 Rca Corp Celle solari di silicio amorfo con giunzioni in tandem

Also Published As

Publication number Publication date
DE3015362C2 (enrdf_load_stackoverflow) 1993-09-02
FR2464564A1 (fr) 1981-03-06
GB2060251A (en) 1981-04-29
FR2464564B1 (enrdf_load_stackoverflow) 1983-12-30
JPS5633889A (en) 1981-04-04
DE3015362A1 (de) 1981-03-19
GB2060251B (en) 1983-08-24
MY8700193A (en) 1987-12-31

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