FR2452788A1 - Dispositif semi-conducteur a transistors a effet de champ formes sur un substrat isolant - Google Patents

Dispositif semi-conducteur a transistors a effet de champ formes sur un substrat isolant

Info

Publication number
FR2452788A1
FR2452788A1 FR8007090A FR8007090A FR2452788A1 FR 2452788 A1 FR2452788 A1 FR 2452788A1 FR 8007090 A FR8007090 A FR 8007090A FR 8007090 A FR8007090 A FR 8007090A FR 2452788 A1 FR2452788 A1 FR 2452788A1
Authority
FR
France
Prior art keywords
effect transistors
field
semiconductor device
insulating substrate
transistors formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8007090A
Other languages
English (en)
Other versions
FR2452788B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2452788A1 publication Critical patent/FR2452788A1/fr
Application granted granted Critical
Publication of FR2452788B1 publication Critical patent/FR2452788B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)

Abstract

L'INVENTION CONCERNE UN DISPOSITIF SEMI-CONDUCTEUR DU TYPE COMPORTANT PLUSIEURS TRANSISTORS A EFFET DE CHAMP SUR UN SUBSTRAT ISOLE. SUR LE SUBSTRAT ISOLE 21, IL EXISTE, DANS L'EXEMPLE CONSIDERE, DEUX TRANSISTORS A EFFET DE CHAMP. LA COUCHE SEMI-CONDUCTRICE 31 CONSTITUANT L'UN D'EUX EST PLUS MINCE QUE LA COUCHE SEMI-CONDUCTRICE 30 CONSTITUANT L'AUTRE TRANSISTOR. L'INVENTION PERMET D'AUGMENTER LA DENSITE DES ELEMENTS.
FR8007090A 1979-03-30 1980-03-28 Dispositif semi-conducteur a transistors a effet de champ formes sur un substrat isolant Granted FR2452788A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3696879A JPS55160457A (en) 1979-03-30 1979-03-30 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2452788A1 true FR2452788A1 (fr) 1980-10-24
FR2452788B1 FR2452788B1 (fr) 1985-03-15

Family

ID=12484529

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8007090A Granted FR2452788A1 (fr) 1979-03-30 1980-03-28 Dispositif semi-conducteur a transistors a effet de champ formes sur un substrat isolant

Country Status (4)

Country Link
US (1) US4395726A (fr)
JP (1) JPS55160457A (fr)
DE (1) DE3011982A1 (fr)
FR (1) FR2452788A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010842A1 (fr) * 1994-09-30 1996-04-11 Aktsionernoe Obschestvo Zakrytogo Tipa 'vl' Transistor a effet de champ du type metal - dielectrique - semi-conducteur

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433679A (en) * 1977-08-22 1979-03-12 Agency Of Ind Science & Technol Semiconductor intergrated circuit on insulation substrate
JPS56126936A (en) * 1980-03-12 1981-10-05 Toshiba Corp Semiconductor device and production thereof
EP0040436B1 (fr) * 1980-05-20 1986-04-30 Kabushiki Kaisha Toshiba Dispositif à semiconducteurs
JPS5799777A (en) * 1980-12-12 1982-06-21 Toshiba Corp Metal oxide semiconductor type semiconductor device
US4883986A (en) * 1981-05-19 1989-11-28 Tokyo Shibaura Denki Kabushiki Kaisha High density semiconductor circuit using CMOS transistors
JPS582068A (ja) * 1981-06-26 1983-01-07 Toshiba Corp 半導体装置およびその製造方法
US5111260A (en) * 1983-06-17 1992-05-05 Texax Instruments Incorporated Polysilicon FETs
US4751554A (en) * 1985-09-27 1988-06-14 Rca Corporation Silicon-on-sapphire integrated circuit and method of making the same
US4758529A (en) * 1985-10-31 1988-07-19 Rca Corporation Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
US4722912A (en) * 1986-04-28 1988-02-02 Rca Corporation Method of forming a semiconductor structure
US4735917A (en) * 1986-04-28 1988-04-05 General Electric Company Silicon-on-sapphire integrated circuits
US4755481A (en) * 1986-05-15 1988-07-05 General Electric Company Method of making a silicon-on-insulator transistor
JP2802618B2 (ja) * 1987-03-26 1998-09-24 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2764395B2 (ja) * 1987-04-20 1998-06-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2604388B2 (ja) * 1987-09-14 1997-04-30 株式会社リコー 半導体装置
US4881512A (en) * 1988-08-31 1989-11-21 General Motors Corporation Internal combustion engine ignition system
US5060034A (en) * 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
US5283457A (en) * 1989-10-02 1994-02-01 Texas Instruments Incorporated Semiconductor on insulator transistor
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
TW214603B (en) * 1992-05-13 1993-10-11 Seiko Electron Co Ltd Semiconductor device
JP2666103B2 (ja) * 1992-06-03 1997-10-22 カシオ計算機株式会社 薄膜半導体装置
US5300443A (en) * 1993-06-30 1994-04-05 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating complementary enhancement and depletion mode field effect transistors on a single substrate
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2899960B2 (ja) * 1996-12-09 1999-06-02 セイコーエプソン株式会社 薄膜トランジスタの製造方法
EP1020920B1 (fr) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Dispositif semiconducteur à transistor à couches minces ayant des transistors de commande et des transistors de pixel sur un substrat commun
JP5294651B2 (ja) * 2007-05-18 2013-09-18 キヤノン株式会社 インバータの作製方法及びインバータ
GB0717976D0 (en) * 2007-09-14 2007-10-31 Tavkhelldze Avto Quantum interference depression effect MOS transistor
KR101522400B1 (ko) * 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745072A (en) * 1970-04-07 1973-07-10 Rca Corp Semiconductor device fabrication
US3958266A (en) * 1974-04-19 1976-05-18 Rca Corporation Deep depletion insulated gate field effect transistors
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *
EXBK/79 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010842A1 (fr) * 1994-09-30 1996-04-11 Aktsionernoe Obschestvo Zakrytogo Tipa 'vl' Transistor a effet de champ du type metal - dielectrique - semi-conducteur

Also Published As

Publication number Publication date
JPS55160457A (en) 1980-12-13
US4395726A (en) 1983-07-26
DE3011982C2 (fr) 1989-06-01
DE3011982A1 (de) 1980-10-02
FR2452788B1 (fr) 1985-03-15

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