FR2436503A1 - Transistor a effet de champ, a electrode de commande - Google Patents

Transistor a effet de champ, a electrode de commande

Info

Publication number
FR2436503A1
FR2436503A1 FR7918940A FR7918940A FR2436503A1 FR 2436503 A1 FR2436503 A1 FR 2436503A1 FR 7918940 A FR7918940 A FR 7918940A FR 7918940 A FR7918940 A FR 7918940A FR 2436503 A1 FR2436503 A1 FR 2436503A1
Authority
FR
France
Prior art keywords
effect transistor
field effect
control electrode
less
doping concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7918940A
Other languages
English (en)
Other versions
FR2436503B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2436503A1 publication Critical patent/FR2436503A1/fr
Application granted granted Critical
Publication of FR2436503B1 publication Critical patent/FR2436503B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

Transistor à effet de champ de type V-MOST dans lequel la région de canal comporte d'une part une partie à plus grande concentration de dopage qui est limitrophe de la zone de source, et d'autre part, une partie à moins grande concentration de dopage, affleurant la surface et entourée d'une zone isolante formée par diffusion. Conformément à l'invention, la partie à moins grande concentration de dopage est, à partir de la jonction-pn formée en coopération avec la zone de drain à faible concentration de dopage, épuisée jusqu'à la surface à une tension qui est inférieure à la tension de claquage.
FR7918940A 1978-07-24 1979-07-23 Transistor a effet de champ, a electrode de commande Granted FR2436503A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7807834,A NL184551C (nl) 1978-07-24 1978-07-24 Veldeffekttransistor met geisoleerde stuurelektrode.

Publications (2)

Publication Number Publication Date
FR2436503A1 true FR2436503A1 (fr) 1980-04-11
FR2436503B1 FR2436503B1 (fr) 1983-05-06

Family

ID=19831290

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7918940A Granted FR2436503A1 (fr) 1978-07-24 1979-07-23 Transistor a effet de champ, a electrode de commande

Country Status (10)

Country Link
US (1) US4233617A (fr)
JP (1) JPS5518100A (fr)
CA (1) CA1134056A (fr)
CH (1) CH648694A5 (fr)
DE (1) DE2927560C2 (fr)
FR (1) FR2436503A1 (fr)
GB (1) GB2026239B (fr)
IT (1) IT1122227B (fr)
NL (1) NL184551C (fr)
SE (1) SE441134B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (fr) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconducteur
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4379305A (en) * 1980-05-29 1983-04-05 General Instrument Corp. Mesh gate V-MOS power FET
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
GB2103419A (en) * 1981-08-04 1983-02-16 Siliconix Inc Field effect transistor with metal source
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
EP0326187A3 (fr) * 1982-05-20 1989-09-27 Fairchild Semiconductor Corporation Structure MOSFET à puissance
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
JPS61150378A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 電界効果トランジスタ
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置
US4755867A (en) * 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
GB2227605A (en) * 1989-01-30 1990-08-01 Philips Electronic Associated A vertical field effect semiconductor device
JPH073409U (ja) * 1993-06-24 1995-01-20 株式会社九州ハマフオーム 座布団
WO1997007548A1 (fr) * 1995-08-21 1997-02-27 Siliconix Incorporated Transistor mos a double diffusion en tranchees a canal court basse tension
US6864520B2 (en) * 2002-04-04 2005-03-08 International Business Machines Corporation Germanium field effect transistor and method of fabricating the same
JP4320167B2 (ja) * 2002-12-12 2009-08-26 忠弘 大見 半導体素子及びシリコン酸化窒化膜の製造方法
US7417266B1 (en) * 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
JP2013069817A (ja) * 2011-09-21 2013-04-18 Toshiba Corp 半導体装置
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246073A1 (fr) * 1973-08-29 1975-04-25 American Micro Syst

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
DE2642615C2 (de) * 1976-09-22 1986-04-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US4084175A (en) * 1976-09-30 1978-04-11 Research Corporation Double implanted planar mos device with v-groove and process of manufacture thereof
JPS5367381A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246073A1 (fr) * 1973-08-29 1975-04-25 American Micro Syst

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Also Published As

Publication number Publication date
GB2026239B (en) 1983-02-02
IT1122227B (it) 1986-04-23
JPS5518100A (en) 1980-02-07
JPS644352B2 (fr) 1989-01-25
SE7906288L (sv) 1980-01-25
NL184551B (nl) 1989-03-16
SE441134B (sv) 1985-09-09
DE2927560C2 (de) 1983-12-22
IT7924515A0 (it) 1979-07-20
DE2927560A1 (de) 1980-02-07
CA1134056A (fr) 1982-10-19
NL184551C (nl) 1989-08-16
GB2026239A (en) 1980-01-30
NL7807834A (nl) 1980-01-28
FR2436503B1 (fr) 1983-05-06
US4233617A (en) 1980-11-11
CH648694A5 (de) 1985-03-29

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