JPS6437055A - Mis transistor - Google Patents
Mis transistorInfo
- Publication number
- JPS6437055A JPS6437055A JP19259287A JP19259287A JPS6437055A JP S6437055 A JPS6437055 A JP S6437055A JP 19259287 A JP19259287 A JP 19259287A JP 19259287 A JP19259287 A JP 19259287A JP S6437055 A JPS6437055 A JP S6437055A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- tip ends
- region
- channel region
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the effect of the short channel and restrain the generation of hot carriers so as to restrain a threshold voltage from varying or a carrier movability from decreasing by a method wherein an impurity region used for the prevention of a punch through phenomenon is formed under a impurity region for an LLD structure as tip ends of the channel region of the former recede from tip ends of the channel region of the latter. CONSTITUTION:A MIS transistor is formed, where p-type impurity high concentrated regions 6a and 6b used for the prevention of a punch through phenomenon are formed under n-type impurity low concentrated regions 7a and 7b provided for the formation of a drain region low in impurity concentration as tip ends of the channel region of the former recede from the tip ends of the channel region of the latter. By these processes, a drain is improved in breakdown strength, not only the dielectric breakdown of a drain end is hard to happen, but also the depletion layer which is formed near first impurity regions 5a and 5b when the transistor is in operation is restrained from diffusing, so that a substrate and an insulating layer are protected against deterioration due to the current based on the hot carriers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19259287A JPS6437055A (en) | 1987-08-03 | 1987-08-03 | Mis transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19259287A JPS6437055A (en) | 1987-08-03 | 1987-08-03 | Mis transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437055A true JPS6437055A (en) | 1989-02-07 |
Family
ID=16293839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19259287A Pending JPS6437055A (en) | 1987-08-03 | 1987-08-03 | Mis transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437055A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216272A (en) * | 1990-04-13 | 1993-06-01 | Nippondenso Co., Ltd. | High withstanding voltage MIS transistor |
US5371024A (en) * | 1988-09-30 | 1994-12-06 | Kabushiki Kaisha Toshiba | Semiconductor device and process for manufacturing the same |
US5426326A (en) * | 1992-08-07 | 1995-06-20 | Hitachi, Ltd. | Semiconductor device including arrangement for reducing junction degradation |
US5492847A (en) * | 1994-08-01 | 1996-02-20 | National Semiconductor Corporation | Counter-implantation method of manufacturing a semiconductor device with self-aligned anti-punchthrough pockets |
EP0717448A1 (en) * | 1994-12-16 | 1996-06-19 | Sun Microsystems, Inc. | Asymmetric low power MOS devices |
US5710606A (en) * | 1994-08-24 | 1998-01-20 | Kabushiki Kaisha Toshiba | LCD TFT having two layer region adjacent base region in which the layers have opposite conductivities and have two density gradients |
US5780912A (en) * | 1994-08-18 | 1998-07-14 | Sun Microsystems, Inc. | Asymmetric low power MOS devices |
US5923987A (en) * | 1997-06-30 | 1999-07-13 | Sun Microsystems, Inc. | Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface |
US5985727A (en) * | 1997-06-30 | 1999-11-16 | Sun Microsystems, Inc. | Method for forming MOS devices with retrograde pocket regions and counter dopant regions buried in the substrate surface |
US6110783A (en) * | 1997-06-27 | 2000-08-29 | Sun Microsystems, Inc. | Method for forming a notched gate oxide asymmetric MOS device |
US6165827A (en) * | 1996-07-09 | 2000-12-26 | Micron Technology, Inc. | Semiconductor transistor devices and methods for forming semiconductor transistor devices |
US6236085B1 (en) | 1996-11-11 | 2001-05-22 | Denso Corporation | Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate |
US6278162B1 (en) * | 1993-06-30 | 2001-08-21 | Integrated Device Technology, Inc. | ESD protection for LDD devices |
-
1987
- 1987-08-03 JP JP19259287A patent/JPS6437055A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371024A (en) * | 1988-09-30 | 1994-12-06 | Kabushiki Kaisha Toshiba | Semiconductor device and process for manufacturing the same |
US5342802A (en) * | 1990-04-13 | 1994-08-30 | Nippondenso Co., Ltd. | Method of manufacturing a complementary MIS transistor |
US5216272A (en) * | 1990-04-13 | 1993-06-01 | Nippondenso Co., Ltd. | High withstanding voltage MIS transistor |
US5426326A (en) * | 1992-08-07 | 1995-06-20 | Hitachi, Ltd. | Semiconductor device including arrangement for reducing junction degradation |
US6278162B1 (en) * | 1993-06-30 | 2001-08-21 | Integrated Device Technology, Inc. | ESD protection for LDD devices |
US5492847A (en) * | 1994-08-01 | 1996-02-20 | National Semiconductor Corporation | Counter-implantation method of manufacturing a semiconductor device with self-aligned anti-punchthrough pockets |
US5780912A (en) * | 1994-08-18 | 1998-07-14 | Sun Microsystems, Inc. | Asymmetric low power MOS devices |
US5710606A (en) * | 1994-08-24 | 1998-01-20 | Kabushiki Kaisha Toshiba | LCD TFT having two layer region adjacent base region in which the layers have opposite conductivities and have two density gradients |
EP0717448A1 (en) * | 1994-12-16 | 1996-06-19 | Sun Microsystems, Inc. | Asymmetric low power MOS devices |
US6333539B1 (en) | 1996-02-22 | 2001-12-25 | Micron Technology, Inc. | Semiconductor transistor devices and methods for forming semiconductor transistor devices |
US6165827A (en) * | 1996-07-09 | 2000-12-26 | Micron Technology, Inc. | Semiconductor transistor devices and methods for forming semiconductor transistor devices |
US6236085B1 (en) | 1996-11-11 | 2001-05-22 | Denso Corporation | Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate |
US6110783A (en) * | 1997-06-27 | 2000-08-29 | Sun Microsystems, Inc. | Method for forming a notched gate oxide asymmetric MOS device |
US5923987A (en) * | 1997-06-30 | 1999-07-13 | Sun Microsystems, Inc. | Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface |
US5985727A (en) * | 1997-06-30 | 1999-11-16 | Sun Microsystems, Inc. | Method for forming MOS devices with retrograde pocket regions and counter dopant regions buried in the substrate surface |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3933529A (en) | Process for the production of a pair of complementary field effect transistors | |
JPS55148464A (en) | Mos semiconductor device and its manufacture | |
JPS6437055A (en) | Mis transistor | |
WO1996024953B1 (en) | TRENCH FIELD EFFECT TRANSISTOR WITH REDUCED PUNCH-THROUGH SUSCEPTIBILITY AND LOW R¿DSon? | |
US4132998A (en) | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate | |
JPS5539619A (en) | Thyristor | |
FR2436503A1 (en) | FIELD EFFECT TRANSISTOR WITH CONTROL ELECTRODE | |
JPS5676574A (en) | Schottky injection electrode type semiconductor device | |
JPS6459961A (en) | Semiconductor device | |
JPS5595370A (en) | Compound semiconductor field-effect transistor | |
JPS5333074A (en) | Production of complementary type insulated gate field effect semiconductor device | |
JPS647567A (en) | Mos transistor | |
ES482691A1 (en) | Semiconductor devices | |
JPS5418684A (en) | Manufacture of semiconductor device | |
JPS5522831A (en) | Manufacturing of semiconductor device | |
JPS6433970A (en) | Field effect semiconductor device | |
JPS6476768A (en) | Semiconductor device and manufacture thereof | |
JPS5772386A (en) | Junction type field-effect semiconductor device | |
JPS6489367A (en) | High breakdown strength semiconductor device | |
EP0146962A3 (en) | Semiconductor device having hetero-structure | |
JPS6448464A (en) | Semiconductor device | |
JPS5563876A (en) | Field-effect semiconductor device | |
JPS5448489A (en) | Mis type semiconductor device | |
JPS6420660A (en) | Semiconductor device | |
JPS6410671A (en) | Compound semiconductor field effect transistor |