IT7924515A0 - Transistore ad effetto di campo, dotato di un elettrodo di porta isolato. - Google Patents

Transistore ad effetto di campo, dotato di un elettrodo di porta isolato.

Info

Publication number
IT7924515A0
IT7924515A0 IT7924515A IT2451579A IT7924515A0 IT 7924515 A0 IT7924515 A0 IT 7924515A0 IT 7924515 A IT7924515 A IT 7924515A IT 2451579 A IT2451579 A IT 2451579A IT 7924515 A0 IT7924515 A0 IT 7924515A0
Authority
IT
Italy
Prior art keywords
gate electrode
field effect
effect transistor
insulated gate
insulated
Prior art date
Application number
IT7924515A
Other languages
English (en)
Other versions
IT1122227B (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7924515A0 publication Critical patent/IT7924515A0/it
Application granted granted Critical
Publication of IT1122227B publication Critical patent/IT1122227B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063Reduced surface field [RESURF] pn-junction structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827Vertical transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT24515/79A 1978-07-24 1979-07-20 Transistore ad effetto di campo,dotato di un elettrodo di porta isolato IT1122227B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7807834,A NL184551C (nl) 1978-07-24 1978-07-24 Veldeffekttransistor met geisoleerde stuurelektrode.

Publications (2)

Publication Number Publication Date
IT7924515A0 true IT7924515A0 (it) 1979-07-20
IT1122227B IT1122227B (it) 1986-04-23

Family

ID=19831290

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24515/79A IT1122227B (it) 1978-07-24 1979-07-20 Transistore ad effetto di campo,dotato di un elettrodo di porta isolato

Country Status (10)

Country Link
US (1) US4233617A (it)
JP (1) JPS5518100A (it)
CA (1) CA1134056A (it)
CH (1) CH648694A5 (it)
DE (1) DE2927560C2 (it)
FR (1) FR2436503A1 (it)
GB (1) GB2026239B (it)
IT (1) IT1122227B (it)
NL (1) NL184551C (it)
SE (1) SE441134B (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4379305A (en) * 1980-05-29 1983-04-05 General Instrument Corp. Mesh gate V-MOS power FET
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
GB2103419A (en) * 1981-08-04 1983-02-16 Siliconix Inc Field effect transistor with metal source
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−mosfet
EP0326187A3 (en) * 1982-05-20 1989-09-27 Fairchild Semiconductor Corporation Power mosfet structure
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
JPS61150378A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 電界効果トランジスタ
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置
US4755867A (en) * 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
GB2227605A (en) * 1989-01-30 1990-08-01 Philips Electronic Associated A vertical field effect semiconductor device
JPH073409U (ja) * 1993-06-24 1995-01-20 株式会社九州ハマフオーム 座布団
AU6722396A (en) * 1995-08-21 1997-03-12 Siliconix Incorporated Low voltage short channel trench dmos transistor
US6864520B2 (en) * 2002-04-04 2005-03-08 International Business Machines Corporation Germanium field effect transistor and method of fabricating the same
JP4320167B2 (ja) * 2002-12-12 2009-08-26 忠弘 大見 半導体素子及びシリコン酸化窒化膜の製造方法
US7417266B1 (en) * 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
JP2013069817A (ja) * 2011-09-21 2013-04-18 Toshiba Corp 半導体装置
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
DE2642615C2 (de) * 1976-09-22 1986-04-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US4084175A (en) * 1976-09-30 1978-04-11 Research Corporation Double implanted planar mos device with v-groove and process of manufacture thereof
JPS5367381A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Also Published As

Publication number Publication date
DE2927560C2 (de) 1983-12-22
NL184551B (nl) 1989-03-16
US4233617A (en) 1980-11-11
NL7807834A (nl) 1980-01-28
FR2436503A1 (fr) 1980-04-11
FR2436503B1 (it) 1983-05-06
GB2026239B (en) 1983-02-02
CA1134056A (en) 1982-10-19
DE2927560A1 (de) 1980-02-07
SE441134B (sv) 1985-09-09
SE7906288L (sv) 1980-01-25
JPS644352B2 (it) 1989-01-25
IT1122227B (it) 1986-04-23
JPS5518100A (en) 1980-02-07
NL184551C (nl) 1989-08-16
GB2026239A (en) 1980-01-30
CH648694A5 (de) 1985-03-29

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970729