Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L29/0843—Source or drain regions of field-effect devices
  • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/7827—Vertical transistors

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=5972731

Family Applications (1)

Country Status (9)

Families Citing this family (29)

Family Cites Families (3)

• 1976
  • 1976-03-17 DE DE2611338A patent/DE2611338C3/de not_active Expired
• 1977
  • 1977-02-09 CH CH153477A patent/CH614072A5/xx not_active IP Right Cessation
  • 1977-02-18 NL NL7701776A patent/NL7701776A/nl not_active Application Discontinuation
  • 1977-03-09 FR FR7706922A patent/FR2344967A1/fr active Granted
  • 1977-03-09 US US05/775,978 patent/US4101922A/en not_active Expired - Lifetime
  • 1977-03-14 GB GB10641/77A patent/GB1576488A/en not_active Expired
  • 1977-03-16 CA CA274,075A patent/CA1081368A/en not_active Expired
  • 1977-03-16 IT IT21289/77A patent/IT1077520B/it active
  • 1977-03-16 JP JP2913577A patent/JPS52113685A/ja active Granted

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