NL7704867A - Veldeffecttransistor met een oppervlaktekanaal. - Google Patents

Veldeffecttransistor met een oppervlaktekanaal.

Info

Publication number
NL7704867A
NL7704867A NL7704867A NL7704867A NL7704867A NL 7704867 A NL7704867 A NL 7704867A NL 7704867 A NL7704867 A NL 7704867A NL 7704867 A NL7704867 A NL 7704867A NL 7704867 A NL7704867 A NL 7704867A
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
surface channel
channel
transistor
Prior art date
Application number
NL7704867A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7704867A publication Critical patent/NL7704867A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
NL7704867A 1976-05-04 1977-05-03 Veldeffecttransistor met een oppervlaktekanaal. NL7704867A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2619663A DE2619663C3 (de) 1976-05-04 1976-05-04 Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung

Publications (1)

Publication Number Publication Date
NL7704867A true NL7704867A (nl) 1977-11-08

Family

ID=5977037

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7704867A NL7704867A (nl) 1976-05-04 1977-05-03 Veldeffecttransistor met een oppervlaktekanaal.

Country Status (8)

Country Link
US (1) US4219829A (nl)
JP (1) JPS52134382A (nl)
BE (1) BE854267A (nl)
DE (1) DE2619663C3 (nl)
FR (1) FR2350694A1 (nl)
GB (1) GB1511637A (nl)
IT (1) IT1076036B (nl)
NL (1) NL7704867A (nl)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
US4472727A (en) * 1983-08-12 1984-09-18 At&T Bell Laboratories Carrier freezeout field-effect device
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
US5162877A (en) * 1987-01-27 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device and method of producing same
US6784492B1 (en) * 1991-03-18 2004-08-31 Canon Kabushiki Kaisha Semiconductor device including a gate-insulated transistor
US5739569A (en) * 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
US5708398A (en) * 1996-07-01 1998-01-13 Motorola Dual voltage controlled oscillator using integrated transistor and negative differential resistance diode
KR100262457B1 (ko) * 1998-05-04 2000-08-01 윤종용 반도체 장치의 오픈 드레인 입출력단 구조 및 그 제조방법
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6593612B2 (en) 2000-12-05 2003-07-15 Infineon Technologies Ag Structure and method for forming a body contact for vertical transistor cells
US7071811B2 (en) * 2003-09-23 2006-07-04 Lsi Logic Corporation High performance voltage control diffusion resistor
EP2281307A4 (en) * 2008-05-28 2011-06-29 Sarnoff Corp ULTRA THIN SILICON BACKLIT IMAGEUR ON INSULATING SUBSTRATES
CN103094478B (zh) * 2013-01-21 2015-01-21 中国科学技术大学 基于硅-分子复合体系单分子负微分电阻器件及制备方法
US10777566B2 (en) 2017-11-10 2020-09-15 Macronix International Co., Ltd. 3D array arranged for memory and in-memory sum-of-products operations
US10957392B2 (en) 2018-01-17 2021-03-23 Macronix International Co., Ltd. 2D and 3D sum-of-products array for neuromorphic computing system
US10719296B2 (en) 2018-01-17 2020-07-21 Macronix International Co., Ltd. Sum-of-products accelerator array
US10242737B1 (en) 2018-02-13 2019-03-26 Macronix International Co., Ltd. Device structure for neuromorphic computing system
US10635398B2 (en) 2018-03-15 2020-04-28 Macronix International Co., Ltd. Voltage sensing type of matrix multiplication method for neuromorphic computing system
US11138497B2 (en) 2018-07-17 2021-10-05 Macronix International Co., Ltd In-memory computing devices for neural networks
US10664746B2 (en) 2018-07-17 2020-05-26 Macronix International Co., Ltd. Neural network system
US11636325B2 (en) 2018-10-24 2023-04-25 Macronix International Co., Ltd. In-memory data pooling for machine learning
US10672469B1 (en) 2018-11-30 2020-06-02 Macronix International Co., Ltd. In-memory convolution for machine learning
US11562229B2 (en) 2018-11-30 2023-01-24 Macronix International Co., Ltd. Convolution accelerator using in-memory computation
US11934480B2 (en) 2018-12-18 2024-03-19 Macronix International Co., Ltd. NAND block architecture for in-memory multiply-and-accumulate operations
US11119674B2 (en) 2019-02-19 2021-09-14 Macronix International Co., Ltd. Memory devices and methods for operating the same
US10783963B1 (en) 2019-03-08 2020-09-22 Macronix International Co., Ltd. In-memory computation device with inter-page and intra-page data circuits
US11132176B2 (en) 2019-03-20 2021-09-28 Macronix International Co., Ltd. Non-volatile computing method in flash memory
US10910393B2 (en) 2019-04-25 2021-02-02 Macronix International Co., Ltd. 3D NOR memory having vertical source and drain structures
US11737274B2 (en) 2021-02-08 2023-08-22 Macronix International Co., Ltd. Curved channel 3D memory device
US11916011B2 (en) 2021-04-14 2024-02-27 Macronix International Co., Ltd. 3D virtual ground memory and manufacturing methods for same
US11710519B2 (en) 2021-07-06 2023-07-25 Macronix International Co., Ltd. High density memory with reference memory using grouped cells and corresponding operations

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053915A (en) * 1976-03-22 1977-10-11 Motorola, Inc. Temperature compensated constant current source device
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
US4145233A (en) * 1978-05-26 1979-03-20 Ncr Corporation Method for making narrow channel FET by masking and ion-implantation

Also Published As

Publication number Publication date
DE2619663A1 (de) 1977-11-10
DE2619663B2 (de) 1981-11-26
BE854267A (fr) 1977-09-01
FR2350694A1 (fr) 1977-12-02
GB1511637A (en) 1978-05-24
FR2350694B1 (nl) 1982-02-05
US4219829A (en) 1980-08-26
IT1076036B (it) 1985-04-22
JPS52134382A (en) 1977-11-10
DE2619663C3 (de) 1982-07-22

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Legal Events

Date Code Title Description
BV The patent application has lapsed