IT1122227B - Transistore ad effetto di campo,dotato di un elettrodo di porta isolato - Google Patents
Transistore ad effetto di campo,dotato di un elettrodo di porta isolatoInfo
- Publication number
- IT1122227B IT1122227B IT24515/79A IT2451579A IT1122227B IT 1122227 B IT1122227 B IT 1122227B IT 24515/79 A IT24515/79 A IT 24515/79A IT 2451579 A IT2451579 A IT 2451579A IT 1122227 B IT1122227 B IT 1122227B
- Authority
- IT
- Italy
- Prior art keywords
- field
- effect transistor
- door electrode
- isolated door
- isolated
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7807834,A NL184551C (nl) | 1978-07-24 | 1978-07-24 | Veldeffekttransistor met geisoleerde stuurelektrode. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7924515A0 IT7924515A0 (it) | 1979-07-20 |
| IT1122227B true IT1122227B (it) | 1986-04-23 |
Family
ID=19831290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24515/79A IT1122227B (it) | 1978-07-24 | 1979-07-20 | Transistore ad effetto di campo,dotato di un elettrodo di porta isolato |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4233617A (it) |
| JP (1) | JPS5518100A (it) |
| CA (1) | CA1134056A (it) |
| CH (1) | CH648694A5 (it) |
| DE (1) | DE2927560C2 (it) |
| FR (1) | FR2436503A1 (it) |
| GB (1) | GB2026239B (it) |
| IT (1) | IT1122227B (it) |
| NL (1) | NL184551C (it) |
| SE (1) | SE441134B (it) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
| US4345265A (en) * | 1980-04-14 | 1982-08-17 | Supertex, Inc. | MOS Power transistor with improved high-voltage capability |
| US4379305A (en) * | 1980-05-29 | 1983-04-05 | General Instrument Corp. | Mesh gate V-MOS power FET |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
| GB2103419A (en) * | 1981-08-04 | 1983-02-16 | Siliconix Inc | Field effect transistor with metal source |
| JPS58106870A (ja) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | パワ−ｍｏｓｆｅｔ |
| EP0326187A3 (en) * | 1982-05-20 | 1989-09-27 | Fairchild Semiconductor Corporation | Power mosfet structure |
| US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
| US4862242A (en) * | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
| US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
| JPS61150378A (ja) * | 1984-12-25 | 1986-07-09 | Toshiba Corp | 電界効果トランジスタ |
| JPS6252969A (ja) * | 1985-08-30 | 1987-03-07 | Nippon Texas Instr Kk | 絶縁ゲ−ト型電界効果半導体装置 |
| US4755867A (en) * | 1986-08-15 | 1988-07-05 | American Telephone And Telegraph Company, At&T Bell Laboratories | Vertical Enhancement-mode Group III-V compound MISFETs |
| GB2227605A (en) * | 1989-01-30 | 1990-08-01 | Philips Electronic Associated | A vertical field effect semiconductor device |
| JPH073409U (ja) * | 1993-06-24 | 1995-01-20 | 株式会社九州ハマフオーム | 座布団 |
| AU6722396A (en) * | 1995-08-21 | 1997-03-12 | Siliconix Incorporated | Low voltage short channel trench dmos transistor |
| US6864520B2 (en) * | 2002-04-04 | 2005-03-08 | International Business Machines Corporation | Germanium field effect transistor and method of fabricating the same |
| JP4320167B2 (ja) * | 2002-12-12 | 2009-08-26 | 忠弘 大見 | 半導体素子及びシリコン酸化窒化膜の製造方法 |
| US7417266B1 (en) * | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
| JP2013069817A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 半導体装置 |
| US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
| US8940620B2 (en) | 2011-12-15 | 2015-01-27 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
| US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
| US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
| DE2619713C2 (de) * | 1976-05-04 | 1984-12-20 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
| DE2642615C2 (de) * | 1976-09-22 | 1986-04-24 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
| US4084175A (en) * | 1976-09-30 | 1978-04-11 | Research Corporation | Double implanted planar mos device with v-groove and process of manufacture thereof |
| JPS5367381A (en) * | 1976-11-27 | 1978-06-15 | Mitsubishi Electric Corp | Semiconductor device |
| US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
-
1978
- 1978-07-24 NL NLAANVRAGE7807834,A patent/NL184551C/xx not_active IP Right Cessation
-
1979
- 1979-01-16 US US06/004,003 patent/US4233617A/en not_active Expired - Lifetime
- 1979-07-07 DE DE2927560A patent/DE2927560C2/de not_active Expired
- 1979-07-19 CA CA332,196A patent/CA1134056A/en not_active Expired
- 1979-07-20 CH CH6784/79A patent/CH648694A5/de not_active IP Right Cessation
- 1979-07-20 IT IT24515/79A patent/IT1122227B/it active
- 1979-07-20 GB GB7925315A patent/GB2026239B/en not_active Expired
- 1979-07-23 FR FR7918940A patent/FR2436503A1/fr active Granted
- 1979-07-23 SE SE7906288A patent/SE441134B/sv not_active IP Right Cessation
- 1979-07-24 JP JP9417279A patent/JPS5518100A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5518100A (en) | 1980-02-07 |
| IT7924515A0 (it) | 1979-07-20 |
| NL7807834A (nl) | 1980-01-28 |
| NL184551C (nl) | 1989-08-16 |
| CH648694A5 (de) | 1985-03-29 |
| SE441134B (sv) | 1985-09-09 |
| NL184551B (nl) | 1989-03-16 |
| US4233617A (en) | 1980-11-11 |
| FR2436503B1 (it) | 1983-05-06 |
| SE7906288L (sv) | 1980-01-25 |
| DE2927560C2 (de) | 1983-12-22 |
| GB2026239A (en) | 1980-01-30 |
| CA1134056A (en) | 1982-10-19 |
| FR2436503A1 (fr) | 1980-04-11 |
| JPS644352B2 (it) | 1989-01-25 |
| DE2927560A1 (de) | 1980-02-07 |
| GB2026239B (en) | 1983-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970729 |