IT1193240B - Transistore a effetto di campo a porta isolata - Google Patents

Transistore a effetto di campo a porta isolata

Info

Publication number
IT1193240B
IT1193240B IT26448/79A IT2644879A IT1193240B IT 1193240 B IT1193240 B IT 1193240B IT 26448/79 A IT26448/79 A IT 26448/79A IT 2644879 A IT2644879 A IT 2644879A IT 1193240 B IT1193240 B IT 1193240B
Authority
IT
Italy
Prior art keywords
field
effect transistor
insulated door
insulated
door
Prior art date
Application number
IT26448/79A
Other languages
English (en)
Other versions
IT7926448A0 (it
Inventor
Fritz Guenter Adam
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IT7926448A0 publication Critical patent/IT7926448A0/it
Application granted granted Critical
Publication of IT1193240B publication Critical patent/IT1193240B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
IT26448/79A 1978-10-14 1979-10-12 Transistore a effetto di campo a porta isolata IT1193240B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782844878 DE2844878A1 (de) 1978-10-14 1978-10-14 Integrierbarer isolierschicht-feldeffekttransistor

Publications (2)

Publication Number Publication Date
IT7926448A0 IT7926448A0 (it) 1979-10-12
IT1193240B true IT1193240B (it) 1988-06-15

Family

ID=6052234

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26448/79A IT1193240B (it) 1978-10-14 1979-10-12 Transistore a effetto di campo a porta isolata

Country Status (6)

Country Link
US (1) US4251829A (it)
JP (1) JPS5553463A (it)
DE (1) DE2844878A1 (it)
FR (1) FR2438918A1 (it)
GB (1) GB2033150B (it)
IT (1) IT1193240B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US4561004A (en) * 1979-10-26 1985-12-24 Texas Instruments High density, electrically erasable, floating gate memory cell
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
GB2126787B (en) * 1982-03-09 1985-10-16 Rca Corp An electrically alterable nonvolatile floating-gate memory device
US4605946A (en) * 1984-08-16 1986-08-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fet charge sensor and voltage probe
JPS61208865A (ja) * 1985-03-13 1986-09-17 Mitsubishi Electric Corp 半導体記憶装置
JPS6260267A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
WO2000028337A2 (en) 1998-11-06 2000-05-18 Onguard Systems, Inc. Electronic circuit with a non-continuous discharge path
US6414318B1 (en) 1998-11-06 2002-07-02 Bridge Semiconductor Corporation Electronic circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2144436C2 (de) * 1971-09-04 1983-01-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Festkörperschaltung zum Einstellen der effektiven Schwellenspannung eines Isolierschicht-Feldeffekttransistors
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
US3996657A (en) * 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
US4028694A (en) * 1975-06-10 1977-06-07 International Business Machines Corporation A/D and D/A converter using C-2C ladder network
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
US4119995A (en) * 1976-08-23 1978-10-10 Intel Corporation Electrically programmable and electrically erasable MOS memory cell
FR2365859A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile pour signaux rapides
JPS6037619B2 (ja) * 1976-11-17 1985-08-27 株式会社東芝 半導体メモリ装置
NL7700879A (nl) * 1977-01-28 1978-08-01 Philips Nv Halfgeleiderinrichting.
DE2728927C2 (de) * 1977-06-27 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Ein-Transistor-Speicherelement
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4162504A (en) * 1977-12-27 1979-07-24 Rca Corp. Floating gate solid-state storage device

Also Published As

Publication number Publication date
GB2033150A (en) 1980-05-14
FR2438918B3 (it) 1981-07-10
IT7926448A0 (it) 1979-10-12
US4251829A (en) 1981-02-17
GB2033150B (en) 1983-02-02
DE2844878A1 (de) 1980-04-30
JPS5553463A (en) 1980-04-18
FR2438918A1 (fr) 1980-05-09

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