JPS5553463A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS5553463A
JPS5553463A JP13195579A JP13195579A JPS5553463A JP S5553463 A JPS5553463 A JP S5553463A JP 13195579 A JP13195579 A JP 13195579A JP 13195579 A JP13195579 A JP 13195579A JP S5553463 A JPS5553463 A JP S5553463A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
insulated gate
gate field
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13195579A
Other languages
English (en)
Inventor
Giyuntaa Adamu Furitsutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5553463A publication Critical patent/JPS5553463A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP13195579A 1978-10-14 1979-10-15 Insulated gate field effect transistor Pending JPS5553463A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782844878 DE2844878A1 (de) 1978-10-14 1978-10-14 Integrierbarer isolierschicht-feldeffekttransistor

Publications (1)

Publication Number Publication Date
JPS5553463A true JPS5553463A (en) 1980-04-18

Family

ID=6052234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13195579A Pending JPS5553463A (en) 1978-10-14 1979-10-15 Insulated gate field effect transistor

Country Status (6)

Country Link
US (1) US4251829A (ja)
JP (1) JPS5553463A (ja)
DE (1) DE2844878A1 (ja)
FR (1) FR2438918A1 (ja)
GB (1) GB2033150B (ja)
IT (1) IT1193240B (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715470A (en) * 1980-06-30 1982-01-26 Ibm Electrically programmable/erasable mos memory cell
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
JPS57147282A (en) * 1981-02-02 1982-09-11 Zaikoru Inc Nonvolatile rewritable floating gate memory
JPS6260267A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561004A (en) * 1979-10-26 1985-12-24 Texas Instruments High density, electrically erasable, floating gate memory cell
JPS59500342A (ja) * 1982-03-09 1984-03-01 ア−ルシ−エ−　コ−ポレ−シヨン 電気的に改変可能の不揮発性浮動ゲ−ト記憶装置
US4605946A (en) * 1984-08-16 1986-08-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fet charge sensor and voltage probe
JPS61208865A (ja) * 1985-03-13 1986-09-17 Mitsubishi Electric Corp 半導体記憶装置
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
US6353324B1 (en) 1998-11-06 2002-03-05 Bridge Semiconductor Corporation Electronic circuit
US6414318B1 (en) 1998-11-06 2002-07-02 Bridge Semiconductor Corporation Electronic circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2144436C2 (de) * 1971-09-04 1983-01-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Festkörperschaltung zum Einstellen der effektiven Schwellenspannung eines Isolierschicht-Feldeffekttransistors
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
US3996657A (en) * 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
US4028694A (en) * 1975-06-10 1977-06-07 International Business Machines Corporation A/D and D/A converter using C-2C ladder network
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
US4119995A (en) * 1976-08-23 1978-10-10 Intel Corporation Electrically programmable and electrically erasable MOS memory cell
FR2365859A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile pour signaux rapides
JPS6037619B2 (ja) * 1976-11-17 1985-08-27 株式会社東芝 半導体メモリ装置
NL7700879A (nl) * 1977-01-28 1978-08-01 Philips Nv Halfgeleiderinrichting.
DE2728927C2 (de) * 1977-06-27 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Ein-Transistor-Speicherelement
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4162504A (en) * 1977-12-27 1979-07-24 Rca Corp. Floating gate solid-state storage device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715470A (en) * 1980-06-30 1982-01-26 Ibm Electrically programmable/erasable mos memory cell
JPH0249026B2 (ja) * 1980-06-30 1990-10-26 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
JPS6362113B2 (ja) * 1980-09-26 1988-12-01
JPS57147282A (en) * 1981-02-02 1982-09-11 Zaikoru Inc Nonvolatile rewritable floating gate memory
JPH0343792B2 (ja) * 1981-02-02 1991-07-03 Xicor Inc
JPS6260267A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JPH0341988B2 (ja) * 1985-09-10 1991-06-25

Also Published As

Publication number Publication date
IT7926448A0 (it) 1979-10-12
FR2438918A1 (fr) 1980-05-09
DE2844878A1 (de) 1980-04-30
FR2438918B3 (ja) 1981-07-10
GB2033150A (en) 1980-05-14
GB2033150B (en) 1983-02-02
IT1193240B (it) 1988-06-15
US4251829A (en) 1981-02-17

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