IT7828651A0 - Specchi di corrente a transistori mos, con scarichi allungati. - Google Patents

Specchi di corrente a transistori mos, con scarichi allungati.

Info

Publication number
IT7828651A0
IT7828651A0 IT7828651A IT2865178A IT7828651A0 IT 7828651 A0 IT7828651 A0 IT 7828651A0 IT 7828651 A IT7828651 A IT 7828651A IT 2865178 A IT2865178 A IT 2865178A IT 7828651 A0 IT7828651 A0 IT 7828651A0
Authority
IT
Italy
Prior art keywords
mos transistor
current mirrors
transistor current
drains
extended drains
Prior art date
Application number
IT7828651A
Other languages
English (en)
Other versions
IT1099381B (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7828651A0 publication Critical patent/IT7828651A0/it
Application granted granted Critical
Publication of IT1099381B publication Critical patent/IT1099381B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/836—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising EDMOS
IT28651/78A 1978-01-09 1978-10-11 Specchi di corrente a transistori mos, con scarichi allungati IT1099381B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB65978 1978-01-09

Publications (2)

Publication Number Publication Date
IT7828651A0 true IT7828651A0 (it) 1978-10-11
IT1099381B IT1099381B (it) 1985-09-18

Family

ID=9708247

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28651/78A IT1099381B (it) 1978-01-09 1978-10-11 Specchi di corrente a transistori mos, con scarichi allungati

Country Status (3)

Country Link
JP (1) JPS5940295B2 (it)
DE (1) DE2900639C3 (it)
IT (1) IT1099381B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477782A (en) * 1983-05-13 1984-10-16 At&T Bell Laboratories Compound current mirror
NL8302731A (nl) * 1983-08-02 1985-03-01 Philips Nv Halfgeleiderinrichting.
JP2014067912A (ja) * 2012-09-26 2014-04-17 Seiko Instruments Inc カレントミラー回路
JP6058960B2 (ja) * 2012-09-27 2017-01-11 エスアイアイ・セミコンダクタ株式会社 カレントミラー回路

Also Published As

Publication number Publication date
IT1099381B (it) 1985-09-18
JPS5940295B2 (ja) 1984-09-29
DE2900639B2 (de) 1980-03-20
JPS5498165A (en) 1979-08-02
DE2900639C3 (de) 1980-12-04
DE2900639A1 (de) 1979-07-12

Similar Documents

Publication Publication Date Title
IT7926522A0 (it) Complesso di cateterismo.
NL177265C (nl) Lichtemitterende halfgeleidereenheid.
IT7919612A0 (it) Barriera anti-intrusi.
IT7926449A0 (it) Transistore di immagazzinamento.
NL189272C (nl) Bipolaire transistor.
IT8024018A0 (it) Transistori.
NO793462L (no) Fitting.
NL7902967A (nl) Elektroluminescerende halfgeleiderinrichting.
IT7927812A0 (it) Memoria fet perfezionata.
NL7901855A (nl) Transistor.
NL7713948A (nl) Vermogenstransistor.
IT7923518A0 (it) Dispositivo limitatore di corrente.
DE3177128D1 (de) Integrierbare leistungstransistoranordnung.
NL189725C (nl) Deurconstructie.
NL7901996A (nl) Aslagering.
NL7903744A (nl) Tandpasta.
IT7828651A0 (it) Specchi di corrente a transistori mos, con scarichi allungati.
ES231017Y (es) Borne de conexion.
NL7900530A (nl) Geintegreerde halfgeleiderschakeling.
NL7710710A (nl) Plint.
NO791702L (no) Tannkrem.
NL7904589A (nl) Grendeltransistor.
NL7705755A (nl) Afvoersysteem.
NL7709296A (nl) Transistorschakeling.
NL7706093A (nl) Rioolput.