FR2433871A1 - Dispositif de formation d'image a semi-conducteur - Google Patents
Dispositif de formation d'image a semi-conducteurInfo
- Publication number
- FR2433871A1 FR2433871A1 FR7920464A FR7920464A FR2433871A1 FR 2433871 A1 FR2433871 A1 FR 2433871A1 FR 7920464 A FR7920464 A FR 7920464A FR 7920464 A FR7920464 A FR 7920464A FR 2433871 A1 FR2433871 A1 FR 2433871A1
- Authority
- FR
- France
- Prior art keywords
- image forming
- forming device
- substance
- photoelectric
- semiconductor image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000126 substance Substances 0.000 abstract 4
- 125000004429 atom Chemical group 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53100060A JPS5822899B2 (ja) | 1978-08-18 | 1978-08-18 | 固体撮像装置 |
JP10303179U JPS5622862U (nl) | 1979-07-27 | 1979-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2433871A1 true FR2433871A1 (fr) | 1980-03-14 |
FR2433871B1 FR2433871B1 (nl) | 1984-07-20 |
Family
ID=26441149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7920464A Granted FR2433871A1 (fr) | 1978-08-18 | 1979-08-10 | Dispositif de formation d'image a semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US4360821A (nl) |
CA (1) | CA1134932A (nl) |
DE (1) | DE2933411A1 (nl) |
FR (1) | FR2433871A1 (nl) |
GB (1) | GB2029642B (nl) |
NL (1) | NL180969C (nl) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0036780A2 (en) * | 1980-03-24 | 1981-09-30 | Hitachi, Ltd. | Method of producing photoelectric transducers |
EP0037244A2 (en) * | 1980-03-26 | 1981-10-07 | Hitachi, Ltd. | Method for fabricating a solid-state imaging device using photoconductive film |
EP0040076A2 (en) * | 1980-05-09 | 1981-11-18 | Hitachi, Ltd. | Photoelectric converter |
EP0042773A1 (fr) * | 1980-06-24 | 1981-12-30 | Thomson-Csf | Procédé de réalisation d'une couche contenant du silicium, et son application aux dispositifs de conversion photoélectrique |
FR2490359A1 (fr) * | 1980-09-12 | 1982-03-19 | Canon Kk | Element photoconducteur |
EP0053946A2 (en) * | 1980-12-10 | 1982-06-16 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
FR2523371A1 (fr) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element |
EP0242647A2 (en) * | 1980-12-10 | 1987-10-28 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5850030B2 (ja) * | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
US4412236A (en) * | 1979-08-24 | 1983-10-25 | Hitachi, Ltd. | Color solid-state imager |
DE3176910D1 (en) * | 1980-02-15 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Semiconductor photoelectric device |
US4405915A (en) * | 1980-03-28 | 1983-09-20 | Canon Kabushiki Kaisha | Photoelectric transducing element |
JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
JPS5728368A (en) * | 1980-07-28 | 1982-02-16 | Hitachi Ltd | Manufacture of semiconductor film |
JPS5739588A (en) * | 1980-08-22 | 1982-03-04 | Fuji Photo Film Co Ltd | Solid state image pickup device |
GB2095030B (en) * | 1981-01-08 | 1985-06-12 | Canon Kk | Photoconductive member |
US4490453A (en) * | 1981-01-16 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member of a-silicon with nitrogen |
US4539283A (en) * | 1981-01-16 | 1985-09-03 | Canon Kabushiki Kaisha | Amorphous silicon photoconductive member |
JPS57132155A (en) * | 1981-02-09 | 1982-08-16 | Canon Inc | Photoelectric transducer |
JPS57177156A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Photoconductive material |
US4443813A (en) * | 1981-12-15 | 1984-04-17 | Fuji Photo Film Co., Ltd. | Solid-state color imager with two layer three story structure |
JPS58105672A (ja) * | 1981-12-17 | 1983-06-23 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
DE3300400A1 (de) * | 1982-01-06 | 1983-07-14 | Canon K.K., Tokyo | Halbleiterbauelement |
DE3303266A1 (de) * | 1982-02-01 | 1983-08-11 | Canon K.K., Tokyo | Fotoeleitfaehiges element |
US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
DE3309240A1 (de) * | 1982-03-15 | 1983-09-22 | Canon K.K., Tokyo | Fotoleitfaehiges aufzeichnungselement |
US4617246A (en) * | 1982-11-04 | 1986-10-14 | Canon Kabushiki Kaisha | Photoconductive member of a Ge-Si layer and Si layer |
JPS59198084A (ja) * | 1983-04-26 | 1984-11-09 | Toshiba Corp | 固体撮像装置の残像抑制方式 |
JPS6045057A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | 固体撮像装置の製造方法 |
US4572882A (en) * | 1983-09-09 | 1986-02-25 | Canon Kabushiki Kaisha | Photoconductive member containing amorphous silicon and germanium |
US4579797A (en) * | 1983-10-25 | 1986-04-01 | Canon Kabushiki Kaisha | Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant |
US4763189A (en) * | 1984-08-31 | 1988-08-09 | Canon Kabushiki Kaisha | Color image sensor with three line sensors on different layers separated by electrically-insulating layers |
US4760437A (en) * | 1986-01-03 | 1988-07-26 | American Telephone And Telegraph Company, At&T Bell Laboratories | Neural networks |
US4818651A (en) | 1986-02-07 | 1989-04-04 | Canon Kabushiki Kaisha | Light receiving member with first layer of A-SiGe(O,N)(H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller |
US5101255A (en) * | 1987-01-14 | 1992-03-31 | Sachio Ishioka | Amorphous photoelectric conversion device with avalanche |
JPH05198787A (ja) * | 1991-11-08 | 1993-08-06 | Canon Inc | 固体撮像装置及びその製造方法 |
EP0605972B1 (en) * | 1992-12-14 | 1999-10-27 | Canon Kabushiki Kaisha | Light receiving member having a multi-layered light receiving layer with an enhanced concentration of hydrogen or/and halogen atoms in the vicinity of the interface of adjacent layers |
SE520119C2 (sv) * | 1998-10-13 | 2003-05-27 | Ericsson Telefon Ab L M | Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar |
US6501109B1 (en) * | 2001-08-29 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company | Active CMOS pixel with exponential output based on the GIDL mechanism |
JP2005012049A (ja) * | 2003-06-20 | 2005-01-13 | Shimadzu Corp | 放射線検出器およびそれを備えた放射線撮像装置 |
EP1834007A1 (en) * | 2004-12-27 | 2007-09-19 | Cardinal CG Company | Oscillating shielded cylindrical target assemblies and their methods of use |
WO2008093834A1 (ja) * | 2007-02-02 | 2008-08-07 | Rohm Co., Ltd. | 固体撮像装置およびその製造方法 |
US9257590B2 (en) * | 2010-12-20 | 2016-02-09 | Industrial Technology Research Institute | Photoelectric element, display unit and method for fabricating the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5130438B1 (nl) * | 1970-04-06 | 1976-09-01 | ||
US3699375A (en) * | 1971-09-27 | 1972-10-17 | Zenith Radio Corp | Image detector including sensor matrix of field effect elements |
US3848261A (en) * | 1972-06-19 | 1974-11-12 | Trw Inc | Mos integrated circuit structure |
JPS5926154B2 (ja) | 1974-07-05 | 1984-06-25 | 株式会社日立製作所 | 固体撮像装置 |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4190851A (en) * | 1975-09-17 | 1980-02-26 | Hughes Aircraft Company | Monolithic extrinsic silicon infrared detectors with charge coupled device readout |
JPS5323224A (en) * | 1976-08-16 | 1978-03-03 | Hitachi Ltd | Solid pickup unit |
US4069492A (en) * | 1976-08-23 | 1978-01-17 | Rca Corporation | Electroluminescent semiconductor device having a body of amorphous silicon |
JPS5941351B2 (ja) * | 1976-09-13 | 1984-10-06 | 株式会社日立製作所 | カラ−用固体撮像素子 |
JPS5389617A (en) * | 1977-01-19 | 1978-08-07 | Hitachi Ltd | Driving method of solid image pickup element |
US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
JPS605108B2 (ja) * | 1977-08-01 | 1985-02-08 | 株式会社日立製作所 | 固体擦像装置 |
US4147667A (en) * | 1978-01-13 | 1979-04-03 | International Business Machines Corporation | Photoconductor for GaAs laser addressed devices |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
US4202928A (en) * | 1978-07-24 | 1980-05-13 | Rca Corporation | Updateable optical storage medium |
-
1979
- 1979-08-10 FR FR7920464A patent/FR2433871A1/fr active Granted
- 1979-08-13 US US06/066,230 patent/US4360821A/en not_active Expired - Lifetime
- 1979-08-16 NL NLAANVRAGE7906258,A patent/NL180969C/nl not_active IP Right Cessation
- 1979-08-17 CA CA000333976A patent/CA1134932A/en not_active Expired
- 1979-08-17 DE DE19792933411 patent/DE2933411A1/de not_active Ceased
- 1979-08-17 GB GB7928748A patent/GB2029642B/en not_active Expired
Non-Patent Citations (2)
Title |
---|
EXBK/74 * |
EXBK/78 * |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0036780A3 (en) * | 1980-03-24 | 1982-08-04 | Hitachi, Ltd. | Method of producing photoelectric transducers |
EP0036780A2 (en) * | 1980-03-24 | 1981-09-30 | Hitachi, Ltd. | Method of producing photoelectric transducers |
EP0037244A2 (en) * | 1980-03-26 | 1981-10-07 | Hitachi, Ltd. | Method for fabricating a solid-state imaging device using photoconductive film |
EP0037244A3 (en) * | 1980-03-26 | 1982-09-08 | Hitachi, Ltd. | Method for fabricating a solid-state imaging device using photoconductive film |
EP0040076A2 (en) * | 1980-05-09 | 1981-11-18 | Hitachi, Ltd. | Photoelectric converter |
EP0040076A3 (en) * | 1980-05-09 | 1982-09-22 | Hitachi, Ltd. | Photoelectric converter |
EP0042773A1 (fr) * | 1980-06-24 | 1981-12-30 | Thomson-Csf | Procédé de réalisation d'une couche contenant du silicium, et son application aux dispositifs de conversion photoélectrique |
US4344984A (en) * | 1980-06-24 | 1982-08-17 | Thomson-Csf | Process for producing a layer containing silicon |
FR2485810A1 (fr) * | 1980-06-24 | 1981-12-31 | Thomson Csf | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede |
FR2490359A1 (fr) * | 1980-09-12 | 1982-03-19 | Canon Kk | Element photoconducteur |
EP0053946A2 (en) * | 1980-12-10 | 1982-06-16 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
EP0053946A3 (en) * | 1980-12-10 | 1984-07-11 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
EP0242647A2 (en) * | 1980-12-10 | 1987-10-28 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
EP0242647A3 (en) * | 1980-12-10 | 1988-03-02 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
FR2523371A1 (fr) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element |
Also Published As
Publication number | Publication date |
---|---|
FR2433871B1 (nl) | 1984-07-20 |
NL180969B (nl) | 1986-12-16 |
GB2029642A (en) | 1980-03-19 |
GB2029642B (en) | 1983-03-02 |
CA1134932A (en) | 1982-11-02 |
DE2933411A1 (de) | 1980-03-20 |
NL180969C (nl) | 1987-05-18 |
US4360821A (en) | 1982-11-23 |
NL7906258A (nl) | 1980-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |