NL180969C - Vaste stof beeldopname-inrichting. - Google Patents

Vaste stof beeldopname-inrichting.

Info

Publication number
NL180969C
NL180969C NLAANVRAGE7906258,A NL7906258A NL180969C NL 180969 C NL180969 C NL 180969C NL 7906258 A NL7906258 A NL 7906258A NL 180969 C NL180969 C NL 180969C
Authority
NL
Netherlands
Prior art keywords
recording device
image recording
solid image
solid
recording
Prior art date
Application number
NLAANVRAGE7906258,A
Other languages
English (en)
Other versions
NL180969B (nl
NL7906258A (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP53100060A external-priority patent/JPS5822899B2/ja
Priority claimed from JP1979103031U external-priority patent/JPS5622862U/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7906258A publication Critical patent/NL7906258A/nl
Publication of NL180969B publication Critical patent/NL180969B/nl
Application granted granted Critical
Publication of NL180969C publication Critical patent/NL180969C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
NLAANVRAGE7906258,A 1978-08-18 1979-08-16 Vaste stof beeldopname-inrichting. NL180969C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10006078 1978-08-18
JP53100060A JPS5822899B2 (ja) 1978-08-18 1978-08-18 固体撮像装置
JP1979103031U JPS5622862U (nl) 1979-07-27 1979-07-27
JP10303179 1979-07-27

Publications (3)

Publication Number Publication Date
NL7906258A NL7906258A (nl) 1980-02-20
NL180969B NL180969B (nl) 1986-12-16
NL180969C true NL180969C (nl) 1987-05-18

Family

ID=26441149

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7906258,A NL180969C (nl) 1978-08-18 1979-08-16 Vaste stof beeldopname-inrichting.

Country Status (6)

Country Link
US (1) US4360821A (nl)
CA (1) CA1134932A (nl)
DE (1) DE2933411A1 (nl)
FR (1) FR2433871A1 (nl)
GB (1) GB2029642B (nl)
NL (1) NL180969C (nl)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4412236A (en) * 1979-08-24 1983-10-25 Hitachi, Ltd. Color solid-state imager
JPS5670673A (en) 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
DE3176910D1 (en) * 1980-02-15 1988-11-17 Matsushita Electric Industrial Co Ltd Semiconductor photoelectric device
JPS56133884A (en) * 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
JPS5928065B2 (ja) * 1980-03-26 1984-07-10 株式会社日立製作所 固体撮像素子の製造方法
US4405915A (en) * 1980-03-28 1983-09-20 Canon Kabushiki Kaisha Photoelectric transducing element
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface
JPS56157075A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Photoelectric transducing device
FR2485810A1 (fr) * 1980-06-24 1981-12-31 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
JPS5739588A (en) * 1980-08-22 1982-03-04 Fuji Photo Film Co Ltd Solid state image pickup device
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
DE3177297T2 (de) * 1980-12-10 1993-06-03 Fuji Xerox Co Ltd Laenglicher duennfilm-lesesensor.
EP0242647B1 (en) * 1980-12-10 1993-02-17 Fuji Xerox Co., Ltd. Elongate thin-film reader
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
JPS57132155A (en) * 1981-02-09 1982-08-16 Canon Inc Photoelectric transducer
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material
US4443813A (en) * 1981-12-15 1984-04-17 Fuji Photo Film Co., Ltd. Solid-state color imager with two layer three story structure
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
DE3347997C2 (nl) * 1982-01-06 1991-01-24 Canon K.K., Tokio/Tokyo, Jp
DE3303266A1 (de) * 1982-02-01 1983-08-11 Canon K.K., Tokyo Fotoeleitfaehiges element
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
FR2523371A1 (fr) * 1982-03-10 1983-09-16 Contellec Michel Le Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element
DE3309240A1 (de) * 1982-03-15 1983-09-22 Canon K.K., Tokyo Fotoleitfaehiges aufzeichnungselement
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
JPS59198084A (ja) * 1983-04-26 1984-11-09 Toshiba Corp 固体撮像装置の残像抑制方式
JPS6045057A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 固体撮像装置の製造方法
US4572882A (en) * 1983-09-09 1986-02-25 Canon Kabushiki Kaisha Photoconductive member containing amorphous silicon and germanium
US4579797A (en) * 1983-10-25 1986-04-01 Canon Kabushiki Kaisha Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
US4763189A (en) * 1984-08-31 1988-08-09 Canon Kabushiki Kaisha Color image sensor with three line sensors on different layers separated by electrically-insulating layers
US4760437A (en) * 1986-01-03 1988-07-26 American Telephone And Telegraph Company, At&T Bell Laboratories Neural networks
EP0235966B1 (en) 1986-02-07 1994-05-04 Canon Kabushiki Kaisha Light receiving member
US5101255A (en) * 1987-01-14 1992-03-31 Sachio Ishioka Amorphous photoelectric conversion device with avalanche
DE69229590T2 (de) * 1991-11-08 2000-03-30 Canon K.K., Tokio/Tokyo Schichtförmiger Festkörperbildsensor und Verfahren zu seiner Herstellung
DE69326878T2 (de) * 1992-12-14 2000-04-27 Canon K.K., Tokio/Tokyo Lichtempfindliches Element mit einer mehrschichtigen Schicht mit erhöhter Wasserstoff oder/und Halogenatom Konzentration im Grenzflächenbereich benachbarter Schichten
SE520119C2 (sv) * 1998-10-13 2003-05-27 Ericsson Telefon Ab L M Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar
US6501109B1 (en) * 2001-08-29 2002-12-31 Taiwan Semiconductor Manufacturing Company Active CMOS pixel with exponential output based on the GIDL mechanism
JP2005012049A (ja) * 2003-06-20 2005-01-13 Shimadzu Corp 放射線検出器およびそれを備えた放射線撮像装置
CA2593063A1 (en) * 2004-12-27 2006-07-06 Cardinal Cg Company Oscillating shielded cylindrical target assemblies and their methods of use
JPWO2008093834A1 (ja) 2007-02-02 2010-05-20 ローム株式会社 固体撮像装置およびその製造方法
US9257590B2 (en) * 2010-12-20 2016-02-09 Industrial Technology Research Institute Photoelectric element, display unit and method for fabricating the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130438B1 (nl) * 1970-04-06 1976-09-01
US3699375A (en) * 1971-09-27 1972-10-17 Zenith Radio Corp Image detector including sensor matrix of field effect elements
US3848261A (en) * 1972-06-19 1974-11-12 Trw Inc Mos integrated circuit structure
JPS5926154B2 (ja) 1974-07-05 1984-06-25 株式会社日立製作所 固体撮像装置
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4190851A (en) * 1975-09-17 1980-02-26 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with charge coupled device readout
JPS5323224A (en) * 1976-08-16 1978-03-03 Hitachi Ltd Solid pickup unit
US4069492A (en) * 1976-08-23 1978-01-17 Rca Corporation Electroluminescent semiconductor device having a body of amorphous silicon
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
JPS605108B2 (ja) * 1977-08-01 1985-02-08 株式会社日立製作所 固体擦像装置
US4147667A (en) * 1978-01-13 1979-04-03 International Business Machines Corporation Photoconductor for GaAs laser addressed devices
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
US4202928A (en) * 1978-07-24 1980-05-13 Rca Corporation Updateable optical storage medium

Also Published As

Publication number Publication date
FR2433871B1 (nl) 1984-07-20
GB2029642B (en) 1983-03-02
CA1134932A (en) 1982-11-02
DE2933411A1 (de) 1980-03-20
US4360821A (en) 1982-11-23
NL180969B (nl) 1986-12-16
NL7906258A (nl) 1980-02-20
FR2433871A1 (fr) 1980-03-14
GB2029642A (en) 1980-03-19

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee

Effective date: 19960301