US4147667A - Photoconductor for GaAs laser addressed devices - Google Patents
Photoconductor for GaAs laser addressed devices Download PDFInfo
- Publication number
- US4147667A US4147667A US05/869,194 US86919478A US4147667A US 4147667 A US4147667 A US 4147667A US 86919478 A US86919478 A US 86919478A US 4147667 A US4147667 A US 4147667A
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- US
- United States
- Prior art keywords
- photoconductor
- amorphous
- gaas laser
- atomic percent
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 11
- 229910052745 lead Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 238000005286 illumination Methods 0.000 claims abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 10
- 239000001257 hydrogen Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910008310 Si—Ge Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table including AIVBIV compounds or alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- This invention relates to photoconductors and more particularly photoconductors sensitive to illumination at about 1.5 eV.
- Infrared sensitive photoconductors having high dark resistivity and fast response times are of interest for applications involving high speed photoactivated devices. It is particularly useful to have photoconductors which are sensitive to gallium arsenide, GaAs, lasers, which have a peak emitting energy at about 1.5 eV.
- Crystalline Si-Ge alloys have been prepared as reported by Braunstein in Physical Review, Vol. 130, page 869 in 1963. These alloys, however, did not exhibit any significant photoconductivity.
- a preferred embodiment of this invention is amorphous Si x Ge 1-x H y , where x ranges from 0.78 to 0.93 and y ranges from 14 to 20 atomic percent.
- This material is a good photoconductor at 1.5 eV and it has a high dark resistivity of about 10 8 ohm-cm and a rapid response, i.e., a mobility of 5 ⁇ 10 -2 cm 2 /Vs.
- FIG. 1 illustrates the photoconductor in the vicinity of the absorption edge for 3 compositions in accordance with this invention, compared to amorphous silicon containing comparable amounts of hydrogen incorporated therein.
- an improved photoconductor for GaAs laser addressed devices which is sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb.
- the structure for this amorphous alloy is Si x A 1-x H y where A is taken from the group consisting of Ge, Sn and Pb, x equals 0.50 to 0.99 and y equals 1 to 50 atomic percent.
- a preferred element in the amorphous silicon alloy is germanium, Ge.
- a preferred concentration of germanium is when x equals 0.78 to 0.93.
- a preferred concentration of H is when y is 5 to 35 atomic percent.
- the addition of a compound from the group, for example, germanium appears to shift the absorption edge of the amorphous silicon further into the infrared region without altering either the response time or the dark resistivity which would be obtained with amorphous silicon, thereby making a sensitivity match to the GaAs wavelength of about 1.5 eV.
- the amorphous alloys of this invention may be prepared by the glow discharge process or alternatively in a sputtering system with the appropriate elements in a carrier gas containing hydrogen. Both methods are familiar to those skilled in the art.
- an amorphous alloy such as Si-GeH is prepared by simultaneously introducing silane and germane into the chamber in the glow discharge process.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Abstract
An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous Six Ge1-x Hy where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.
Description
This invention relates to photoconductors and more particularly photoconductors sensitive to illumination at about 1.5 eV.
Infrared sensitive photoconductors having high dark resistivity and fast response times are of interest for applications involving high speed photoactivated devices. It is particularly useful to have photoconductors which are sensitive to gallium arsenide, GaAs, lasers, which have a peak emitting energy at about 1.5 eV.
The preparation of amorphous silicon and amorphous germanium by the glow discharge method was reported by Chittick in the Journal of Non-crystalline Solids, Vol. 3 (1970) pgs. 255-270. Chittick reported that the amorphous silicon which contained hydrogen incorporated therein as the result of being prepared by the glow discharge process was a very good photoconductor in the spectral range above 2 eV. However, the photoconductivity dropped off significantly at values below 2 eV and was relatively weak at 1.5 eV, the wavelength of the GaAs laser. Chittick also reported that the amorphous germanium prepared by the same method and containing hydrogen therein had no measurable photoconductivity and had a low dark resistivity.
Crystalline Si-Ge alloys have been prepared as reported by Braunstein in Physical Review, Vol. 130, page 869 in 1963. These alloys, however, did not exhibit any significant photoconductivity.
It was reported by Beaglehole in the Journal of Non-Crystalline Solids, Vol. 4, page 272 in 1970 that amorphous Si-Ge alloys that had been prepared by the co-evaporation method did not exhibit any significant photoconductivity. The amorphous Si-Ge alloys prepared by this method did not have any hydrogen incorporated therein as a result of the method by which it was formed.
It is a primary object of this invention to provide a photoconductor with improved response in the infrared.
It is still another object of this invention to provide a photoconductor being sensitive at the wavelength of the GaAs laser, that is, 1.5 eV.
It is a further object of this invention to provide a photoconductor sensitive at 1.5 eV that has fast response and high dark resistivity.
These and other objects are accomplished by an amorphous Six A1-x Hy alloy where A is taken from the group consisting of Ge, Sn and Pb, and where x=0.50 to 0.99 and y=1 to 50 atomic percent. A preferred embodiment of this invention is amorphous Six Ge1-x Hy, where x ranges from 0.78 to 0.93 and y ranges from 14 to 20 atomic percent. This material is a good photoconductor at 1.5 eV and it has a high dark resistivity of about 108 ohm-cm and a rapid response, i.e., a mobility of 5×10-2 cm2 /Vs.
Other objects of this invention will be apparent from the following detailed description, reference being made to the accompanying drawing wherein various embodiments of the invention are shown.
FIG. 1 illustrates the photoconductor in the vicinity of the absorption edge for 3 compositions in accordance with this invention, compared to amorphous silicon containing comparable amounts of hydrogen incorporated therein.
In accordance with this invention, an improved photoconductor for GaAs laser addressed devices which is sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. The structure for this amorphous alloy is Six A1-x Hy where A is taken from the group consisting of Ge, Sn and Pb, x equals 0.50 to 0.99 and y equals 1 to 50 atomic percent.
A preferred element in the amorphous silicon alloy is germanium, Ge. A preferred concentration of germanium is when x equals 0.78 to 0.93. A preferred concentration of H is when y is 5 to 35 atomic percent. The addition of a compound from the group, for example, germanium, appears to shift the absorption edge of the amorphous silicon further into the infrared region without altering either the response time or the dark resistivity which would be obtained with amorphous silicon, thereby making a sensitivity match to the GaAs wavelength of about 1.5 eV.
The amorphous alloys of this invention may be prepared by the glow discharge process or alternatively in a sputtering system with the appropriate elements in a carrier gas containing hydrogen. Both methods are familiar to those skilled in the art. Preferably, an amorphous alloy such as Si-GeH is prepared by simultaneously introducing silane and germane into the chamber in the glow discharge process.
A film 1 to 3 microns thick of amorphous Six Ge1-x Hy, where x is 0.93 and y is between 14 and 20 atomic percent, was prepared by the RF glow discharge decomposition of silane and germane gases. The mixed gases were reacted at 310 mTorr pressure, the flow rate was 0.6 Scc/S and a net RF power of 24 watts was employed. The substrate temperature was maintained constant at 250° C. Hydrogen is present in this glow discharge process. The photoconductivity showing the shifting of the absorption edge further into the infrared is shown in FIG. 1 where it is compared with an amorphous silicon alloy having a similar amount of hydrogen incorporated therein.
Films containing germanium and having 0.78 silicon and 0.54 silicon, respectively, were prepared by the method described above under Example 1. The photoconductivity of these two materials is set forth in FIG. 1.
As illustrated in FIG. 1, all three alloys, examples 1, 2 and 3, prepared in accordance with this invention, shift the absorption edge further into the infrared. Furthermore, this is accomplished without altering either the resistivity or the response time of the material. These three alloys have a sensitivity at the GaAs wavelength of 1.5 eV which is greater than that for the amorphous silicon material containing hydrogen only.
Although preferred embodiments of this invention have been described, it is understood that numerous variations may be made in accordance with the principles of this invention.
Claims (6)
1. A photoconductor sensitive to illumination from a GaAs laser at about 1.5 eV comprising
amorphous Six A1-x Hy
where A is selected from the group consisting of Ge, Sn and Pb
x=0.50 to 0.99
y=1 to 50 atomic percent.
2. A photoconductor as described in claim 1 wherein A is Ge.
3. A photoconductor as described in claim 2 wherein y=5 to 35 atomic percent.
4. A photoconductor as described in claim 2 wherein y=14 to 20 atomic percent.
5. A photoconductor as described in claim 2 wherein x=0.78 to 0.93.
6. A photoconductor as described in claim 5 wherein y=14 to 20 atomic percent.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/869,194 US4147667A (en) | 1978-01-13 | 1978-01-13 | Photoconductor for GaAs laser addressed devices |
CA314,676A CA1111536A (en) | 1978-01-13 | 1978-10-30 | Photoconductor for gaas laser addressed devices |
JP14797978A JPS5498588A (en) | 1978-01-13 | 1978-12-01 | Photoconductive element |
IT31082/78A IT1160377B (en) | 1978-01-13 | 1978-12-21 | PERFECTED PHOTOCONDUCTOR |
EP78101834A EP0003237B1 (en) | 1978-01-13 | 1978-12-23 | Use of an amorphous alloy of silicon and germanium as against gallium-arsenide laser radiation sensitive photoconductor |
DE7878101834T DE2862265D1 (en) | 1978-01-13 | 1978-12-23 | Use of an amorphous alloy of silicon and germanium as against gallium-arsenide laser radiation sensitive photoconductor |
AT0934578A AT371949B (en) | 1978-01-13 | 1978-12-28 | SENSITIVE PHOTOConductors AGAINST GALLIUM ARSENIDE LASER RADIATION |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/869,194 US4147667A (en) | 1978-01-13 | 1978-01-13 | Photoconductor for GaAs laser addressed devices |
Publications (1)
Publication Number | Publication Date |
---|---|
US4147667A true US4147667A (en) | 1979-04-03 |
Family
ID=25353100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/869,194 Expired - Lifetime US4147667A (en) | 1978-01-13 | 1978-01-13 | Photoconductor for GaAs laser addressed devices |
Country Status (7)
Country | Link |
---|---|
US (1) | US4147667A (en) |
EP (1) | EP0003237B1 (en) |
JP (1) | JPS5498588A (en) |
AT (1) | AT371949B (en) |
CA (1) | CA1111536A (en) |
DE (1) | DE2862265D1 (en) |
IT (1) | IT1160377B (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4255686A (en) * | 1978-05-19 | 1981-03-10 | Hitachi, Ltd. | Storage type photosensor containing silicon and hydrogen |
EP0039219A1 (en) * | 1980-04-25 | 1981-11-04 | Hitachi, Ltd. | Light sensitive screen and devices including the same |
US4340506A (en) * | 1978-07-26 | 1982-07-20 | Tdk Electronics Co., Ltd. | Photoelectric transfer device |
US4360821A (en) * | 1978-08-18 | 1982-11-23 | Hitachi, Ltd. | Solid-state imaging device |
US4365015A (en) * | 1979-08-20 | 1982-12-21 | Canon Kabushiki Kaisha | Photosensitive member for electrophotography composed of a photoconductive amorphous silicon |
WO1983002254A1 (en) * | 1981-12-31 | 1983-07-07 | Western Electric Co | Optical recording media |
US4397933A (en) * | 1978-12-28 | 1983-08-09 | Canon Kabushiki Kaisha | Hydrogenated amorphous silicon photoconductive layer |
FR2535902A1 (en) * | 1982-11-04 | 1984-05-11 | Canon Kk | PHOTOCONDUCTIVE ELEMENT |
US4451546A (en) * | 1982-03-31 | 1984-05-29 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
US4489149A (en) * | 1980-05-08 | 1984-12-18 | Minolta Camera Kabushiki Kaisha | Electrophotographic amorphous silicon member |
US4490450A (en) * | 1982-03-31 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member |
US4491626A (en) * | 1982-03-31 | 1985-01-01 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
US4565731A (en) * | 1978-05-04 | 1986-01-21 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
US4673628A (en) * | 1979-03-26 | 1987-06-16 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
US4843439A (en) * | 1985-08-28 | 1989-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2441264A1 (en) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | RADIATION SENSITIVE SCREEN |
JPS6323858Y2 (en) * | 1981-01-31 | 1988-06-30 | ||
JPS58102970A (en) * | 1981-12-16 | 1983-06-18 | Konishiroku Photo Ind Co Ltd | Laser recorder |
JPS605025U (en) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | Microwave oven output switching device |
JPS605024U (en) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | Microwave oven output switching device |
JPS605023U (en) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | Microwave oven output switching device |
US4579797A (en) * | 1983-10-25 | 1986-04-01 | Canon Kabushiki Kaisha | Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant |
JPS61205948A (en) * | 1985-03-08 | 1986-09-12 | Canon Inc | Photoreceptor |
JPH0750332B2 (en) * | 1985-09-03 | 1995-05-31 | 株式会社リコー | Electrophotographic photoreceptor |
JPH0441542Y2 (en) * | 1987-12-28 | 1992-09-30 | ||
JPH087448B2 (en) * | 1988-04-28 | 1996-01-29 | シャープ株式会社 | Method for manufacturing electrophotographic photoreceptor |
JPH07117764B2 (en) * | 1988-04-04 | 1995-12-18 | シャープ株式会社 | Method for manufacturing electrophotographic photoreceptor |
JPH07117762B2 (en) * | 1988-06-28 | 1995-12-18 | シャープ株式会社 | Method for manufacturing electrophotographic photoreceptor |
JPH07120060B2 (en) * | 1988-11-29 | 1995-12-20 | シャープ株式会社 | Method for manufacturing electrophotographic photoreceptor |
JPH07117763B2 (en) * | 1988-06-30 | 1995-12-18 | シャープ株式会社 | Method for manufacturing electrophotographic photoreceptor |
CN101550495B (en) * | 2008-04-02 | 2010-11-10 | 北京有色金属研究总院 | Preparation method of silicon-germanium alloy material |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3279954A (en) * | 1961-06-09 | 1966-10-18 | Rca Corp | Thermoelectric device having silicongermanium alloy thermoelement |
US3966470A (en) * | 1973-08-22 | 1976-06-29 | Veb Pentacon Dresden | Photo-conductive coating containing Ge, S, and Pb or Sn |
US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
Family Cites Families (2)
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---|---|---|---|---|
US2953529A (en) * | 1957-04-01 | 1960-09-20 | Rca Corp | Semiconductive radiation-sensitive device |
US3105906A (en) * | 1959-11-24 | 1963-10-01 | Rca Corp | Germanium silicon alloy semiconductor detector for infrared radiation |
-
1978
- 1978-01-13 US US05/869,194 patent/US4147667A/en not_active Expired - Lifetime
- 1978-10-30 CA CA314,676A patent/CA1111536A/en not_active Expired
- 1978-12-01 JP JP14797978A patent/JPS5498588A/en active Granted
- 1978-12-21 IT IT31082/78A patent/IT1160377B/en active
- 1978-12-23 EP EP78101834A patent/EP0003237B1/en not_active Expired
- 1978-12-23 DE DE7878101834T patent/DE2862265D1/en not_active Expired
- 1978-12-28 AT AT0934578A patent/AT371949B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3279954A (en) * | 1961-06-09 | 1966-10-18 | Rca Corp | Thermoelectric device having silicongermanium alloy thermoelement |
US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
US3966470A (en) * | 1973-08-22 | 1976-06-29 | Veb Pentacon Dresden | Photo-conductive coating containing Ge, S, and Pb or Sn |
Non-Patent Citations (4)
Title |
---|
"Optical Properties of Amorphous Si-Ge Alloys Prepared by the Glow Discharge Process", A. Onton et al., San Diego Meeting of the American Physical Society, Mar. 21-24, 1977. * |
Journal of Non-Crystalline Solids, 13 (1973/74) 55-68, "Photoconductivity and Absorption in Amorphous Si." * |
Journal of Non-Crystalline Solids, 3 (1970), 225-270, "Properties of Glow-Discharge Deposited Amorphous Germanium and Silicon." * |
Journal of Non-Crystalline Solids, 4 (1970) 272-278, "The Fundamental Absorption of Amorphous Ge, Si and GeSi Alloys." * |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4664998A (en) * | 1978-05-04 | 1987-05-12 | Canon Kabushiki Kaisha | Electrophotographic image forming member having hydrogenated amorphous photoconductive layer including carbon |
US5753936A (en) * | 1978-05-04 | 1998-05-19 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
US4830946A (en) * | 1978-05-04 | 1989-05-16 | Canon Kabushiki Kaisha | CVD process for forming an image forming member for electrophotography |
US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
US5573884A (en) * | 1978-05-04 | 1996-11-12 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
US4745041A (en) * | 1978-05-04 | 1988-05-17 | Canon Kabushiki Kaisha | CVD process for forming semiconducting film having hydrogenated germanium matrix |
US4565731A (en) * | 1978-05-04 | 1986-01-21 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
US4255686A (en) * | 1978-05-19 | 1981-03-10 | Hitachi, Ltd. | Storage type photosensor containing silicon and hydrogen |
US4340506A (en) * | 1978-07-26 | 1982-07-20 | Tdk Electronics Co., Ltd. | Photoelectric transfer device |
US4360821A (en) * | 1978-08-18 | 1982-11-23 | Hitachi, Ltd. | Solid-state imaging device |
US4397933A (en) * | 1978-12-28 | 1983-08-09 | Canon Kabushiki Kaisha | Hydrogenated amorphous silicon photoconductive layer |
US4877709A (en) * | 1979-03-26 | 1989-10-31 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
US4701394A (en) * | 1979-03-26 | 1987-10-20 | Canon Kabushiki Kaisha | Image forming member for elecrophotography |
US4673628A (en) * | 1979-03-26 | 1987-06-16 | Canon Kabushiki Kaisha | Image forming member for electrophotography |
US4737428A (en) * | 1979-03-26 | 1988-04-12 | Canon Kabushiki Kaisha | Image forming process for electrophotography |
US4365015A (en) * | 1979-08-20 | 1982-12-21 | Canon Kabushiki Kaisha | Photosensitive member for electrophotography composed of a photoconductive amorphous silicon |
EP0039219A1 (en) * | 1980-04-25 | 1981-11-04 | Hitachi, Ltd. | Light sensitive screen and devices including the same |
US4419604A (en) * | 1980-04-25 | 1983-12-06 | Hitachi, Ltd. | Light sensitive screen |
US4489149A (en) * | 1980-05-08 | 1984-12-18 | Minolta Camera Kabushiki Kaisha | Electrophotographic amorphous silicon member |
WO1983002254A1 (en) * | 1981-12-31 | 1983-07-07 | Western Electric Co | Optical recording media |
US4490450A (en) * | 1982-03-31 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member |
US4491626A (en) * | 1982-03-31 | 1985-01-01 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
US4451546A (en) * | 1982-03-31 | 1984-05-29 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
FR2535902A1 (en) * | 1982-11-04 | 1984-05-11 | Canon Kk | PHOTOCONDUCTIVE ELEMENT |
US4843439A (en) * | 1985-08-28 | 1989-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
Also Published As
Publication number | Publication date |
---|---|
IT1160377B (en) | 1987-03-11 |
AT371949B (en) | 1983-08-10 |
EP0003237A1 (en) | 1979-08-08 |
IT7831082A0 (en) | 1978-12-21 |
EP0003237B1 (en) | 1983-05-18 |
CA1111536A (en) | 1981-10-27 |
JPS5498588A (en) | 1979-08-03 |
DE2862265D1 (en) | 1983-07-07 |
ATA934578A (en) | 1982-12-15 |
JPS5522950B2 (en) | 1980-06-19 |
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