FR2425151A1 - Circuit integre cmos - Google Patents

Circuit integre cmos

Info

Publication number
FR2425151A1
FR2425151A1 FR7911062A FR7911062A FR2425151A1 FR 2425151 A1 FR2425151 A1 FR 2425151A1 FR 7911062 A FR7911062 A FR 7911062A FR 7911062 A FR7911062 A FR 7911062A FR 2425151 A1 FR2425151 A1 FR 2425151A1
Authority
FR
France
Prior art keywords
tension
integrated circuit
cmos integrated
circuit
circuit output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7911062A
Other languages
English (en)
Other versions
FR2425151B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2425151A1 publication Critical patent/FR2425151A1/fr
Application granted granted Critical
Publication of FR2425151B1 publication Critical patent/FR2425151B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

A.CIRCUIT CMOS MONOLITHIQUE INTEGRE COMPORTANT AU MOINS UNE CHARGE ENTRE UN PREMIER NOEUD DE TENSION ET UNE SORTIE DU CIRCUIT AINSI QU'UN PREMIER ET UN SECOND TRANSISTOR MOS D'UN PREMIER TYPE DE CONDUCTIVITE DE CANAL EN SERIE ENTRE LA SORTIE DU CIRCUIT ET UN SECOND NOEUD DE TENSION. B.CIRCUIT CARACTERISE EN CE QUE LES DEUX TRANSISTORS MOS ONT DES TUBES DISTINCTS RELIES A LEURS SOURCES RESPECTIVES POUR DONNER AU MOINS UN TUBE QUI N'EST PAS DIRECTEMENT LIE AUX NOEUDS DE TENSION.
FR7911062A 1978-05-01 1979-05-02 Circuit integre cmos Granted FR2425151A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/902,012 US4191898A (en) 1978-05-01 1978-05-01 High voltage CMOS circuit

Publications (2)

Publication Number Publication Date
FR2425151A1 true FR2425151A1 (fr) 1979-11-30
FR2425151B1 FR2425151B1 (fr) 1984-10-26

Family

ID=25415181

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7911062A Granted FR2425151A1 (fr) 1978-05-01 1979-05-02 Circuit integre cmos

Country Status (7)

Country Link
US (1) US4191898A (fr)
JP (1) JPS54144169A (fr)
DE (1) DE2917599C2 (fr)
FR (1) FR2425151A1 (fr)
GB (1) GB2020129B (fr)
MY (1) MY8500472A (fr)
SG (1) SG16484G (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303958A (en) * 1979-06-18 1981-12-01 Motorola Inc. Reverse battery protection
US4354151A (en) * 1980-06-12 1982-10-12 Rca Corporation Voltage divider circuits
DE3424274A1 (de) * 1984-07-02 1986-01-09 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung zur abgabe einer zwischen einem positiven und einem negativen spannungspegel alternierenden taktspannung
US4779015A (en) * 1987-05-26 1988-10-18 International Business Machines Corporation Low voltage swing CMOS receiver circuit
KR900001817B1 (ko) * 1987-08-01 1990-03-24 삼성전자 주식회사 저항 수단을 이용한 씨 모스 티티엘 인푸트 버퍼
GB2209104A (en) * 1987-08-26 1989-04-26 Philips Nv An amplifier load circuit and an amplifier including the load circuit
US4937477A (en) * 1988-01-19 1990-06-26 Supertex, Inc. Integrated mos high-voltage level-translation circuit, structure and method
IT1217373B (it) * 1988-03-28 1990-03-22 Sgs Thomson Microelectronics Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati
US4881105A (en) * 1988-06-13 1989-11-14 International Business Machines Corporation Integrated trench-transistor structure and fabrication process
JPH03101162A (ja) * 1989-09-13 1991-04-25 Mitsubishi Electric Corp 半導体集積回路装置
JP2545146B2 (ja) * 1990-01-25 1996-10-16 富士通株式会社 レベル変換回路
US5382838A (en) * 1993-03-18 1995-01-17 Northern Telecom Limited Digital driver with class AB output stage
JP3369384B2 (ja) * 1995-07-12 2003-01-20 三菱電機株式会社 出力バッファ回路
JP3179350B2 (ja) * 1996-09-09 2001-06-25 日本電気株式会社 レベルシフト回路
US6166580A (en) * 1998-12-18 2000-12-26 Vlsi Technology, Inc. CMOS high-to-low voltage buffer
US6297686B1 (en) * 1999-05-28 2001-10-02 Winbond Electronics Corporation Semiconductor integrated circuit for low-voltage high-speed operation
JP2002033399A (ja) 2000-07-13 2002-01-31 Toshiba Corp 半導体集積回路及びその製造方法
US6452418B1 (en) 2001-06-28 2002-09-17 Koninklijke Philips Electronics N.V. Level shifter with independent grounds and improved EME-isolation
US20070068337A1 (en) * 2005-09-06 2007-03-29 Matthew Mincer Ergonomic, adjustable handle for microtomes and cryostats

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636372A (en) * 1967-12-06 1972-01-18 Hitachi Ltd Semiconductor switching circuits and integrated devices thereof
DE2348984A1 (de) * 1973-09-28 1975-04-24 Siemens Ag Anordnung mit feldeffekttransistoren
FR2273414A1 (fr) * 1974-05-29 1975-12-26 Philips Nv
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436621A (en) * 1966-12-16 1969-04-01 Texas Instruments Inc Linear amplifier utilizing a pair of field effect transistors
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US3825772A (en) * 1973-05-25 1974-07-23 Ibm Contact bounce eliminator circuit with low standby power
US3867646A (en) * 1973-10-05 1975-02-18 Electronic Arrays MOSFET circuitry for integrated chips interfacing with higher voltage devices
JPS50134553A (fr) * 1974-04-10 1975-10-24
US3900746A (en) * 1974-05-03 1975-08-19 Ibm Voltage level conversion circuit
JPS5160440A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Kotaiatsuyo mis fet suitsuchingukairo
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
JPS525254A (en) * 1975-07-02 1977-01-14 Hitachi Ltd High voltage resistance mis switching circuit
US4039862A (en) * 1976-01-19 1977-08-02 Rca Corporation Level shift circuit
US4023050A (en) * 1976-05-10 1977-05-10 Gte Laboratories Incorporated Logic level converter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636372A (en) * 1967-12-06 1972-01-18 Hitachi Ltd Semiconductor switching circuits and integrated devices thereof
DE2348984A1 (de) * 1973-09-28 1975-04-24 Siemens Ag Anordnung mit feldeffekttransistoren
FR2273414A1 (fr) * 1974-05-29 1975-12-26 Philips Nv
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load

Also Published As

Publication number Publication date
US4191898A (en) 1980-03-04
DE2917599A1 (de) 1979-11-08
JPS54144169A (en) 1979-11-10
GB2020129A (en) 1979-11-07
GB2020129B (en) 1983-02-23
MY8500472A (en) 1985-12-31
FR2425151B1 (fr) 1984-10-26
DE2917599C2 (de) 1986-06-26
SG16484G (en) 1985-02-15

Similar Documents

Publication Publication Date Title
FR2425151A1 (fr) Circuit integre cmos
FR2409640A1 (fr) Circuit numerique a semiconducteurs, monolithique, comportant plusieurs transistors bipolaires
JPS5490941A (en) Driving circuit of tristate type
FR1148115A (fr) Perfectionnements aux redresseurs au silicium ainsi qu'à leurs procédés de fabrication
FR2406358A1 (fr) Circuit d'interface pour poste telephonique
JPS5374385A (en) Manufacture of field effect semiconductor device
FR2369181A1 (fr) Recipient a deux chambres pour l'administration de d
KR920022541A (ko) Ccd 시프트레지스터
BE756139A (fr) Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
EP0909033A3 (fr) Circuit porte de transfert redresseuse
KR890011209A (ko) 듀일 슬로프 파형 발생회로
FR2401562A1 (fr) Circuit logique commutateur de courant
IT8322738A0 (it) Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore.
FR2372190A1 (fr) Composes organiques du silicium comprenant au moins un radical alcenyloxy et compositions thermodurcissables les contenant
FR2428810A1 (fr) Echangeur thermique helicoidal specialement adapte au refroidissement de l'acide sulfurique
JPS55160462A (en) Semiconductor device
FR2414827A1 (fr) Circuit detecteur a deux etats
JPS53121579A (en) Semiconductor integrated circuit
KR870001672A (ko) 반도체 회로장치
KR920015591A (ko) 전하결합소자
ES2040462T3 (es) Aparato activador de presentacion de video.
JPS5469947A (en) Hysteresis circuit
EP0089527A3 (fr) Circuit Darlington monolithique intégré
FR1374007A (fr) Mode d'assemblage bout à bout de tubes pouvant être repliés l'un contre l'autre
FR1296568A (fr) Générateur solaire mixte photo-électrique et thermo-électrique pour l'alimentation du tube fluorescent et de la lampe solaire