FR2425151B1 - - Google Patents
Info
- Publication number
- FR2425151B1 FR2425151B1 FR7911062A FR7911062A FR2425151B1 FR 2425151 B1 FR2425151 B1 FR 2425151B1 FR 7911062 A FR7911062 A FR 7911062A FR 7911062 A FR7911062 A FR 7911062A FR 2425151 B1 FR2425151 B1 FR 2425151B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018557—Coupling arrangements; Impedance matching circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/902,012 US4191898A (en) | 1978-05-01 | 1978-05-01 | High voltage CMOS circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2425151A1 FR2425151A1 (fr) | 1979-11-30 |
| FR2425151B1 true FR2425151B1 (fr) | 1984-10-26 |
Family
ID=25415181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7911062A Granted FR2425151A1 (fr) | 1978-05-01 | 1979-05-02 | Circuit integre cmos |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4191898A (fr) |
| JP (1) | JPS54144169A (fr) |
| DE (1) | DE2917599C2 (fr) |
| FR (1) | FR2425151A1 (fr) |
| GB (1) | GB2020129B (fr) |
| MY (1) | MY8500472A (fr) |
| SG (1) | SG16484G (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4303958A (en) * | 1979-06-18 | 1981-12-01 | Motorola Inc. | Reverse battery protection |
| US4354151A (en) * | 1980-06-12 | 1982-10-12 | Rca Corporation | Voltage divider circuits |
| DE3424274A1 (de) * | 1984-07-02 | 1986-01-09 | Siemens AG, 1000 Berlin und 8000 München | Integrierte schaltung zur abgabe einer zwischen einem positiven und einem negativen spannungspegel alternierenden taktspannung |
| US4779015A (en) * | 1987-05-26 | 1988-10-18 | International Business Machines Corporation | Low voltage swing CMOS receiver circuit |
| KR900001817B1 (ko) * | 1987-08-01 | 1990-03-24 | 삼성전자 주식회사 | 저항 수단을 이용한 씨 모스 티티엘 인푸트 버퍼 |
| GB2209104A (en) * | 1987-08-26 | 1989-04-26 | Philips Nv | An amplifier load circuit and an amplifier including the load circuit |
| US4937477A (en) * | 1988-01-19 | 1990-06-26 | Supertex, Inc. | Integrated mos high-voltage level-translation circuit, structure and method |
| IT1217373B (it) * | 1988-03-28 | 1990-03-22 | Sgs Thomson Microelectronics | Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati |
| US4881105A (en) * | 1988-06-13 | 1989-11-14 | International Business Machines Corporation | Integrated trench-transistor structure and fabrication process |
| JPH03101162A (ja) * | 1989-09-13 | 1991-04-25 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| JP2545146B2 (ja) * | 1990-01-25 | 1996-10-16 | 富士通株式会社 | レベル変換回路 |
| US5382838A (en) * | 1993-03-18 | 1995-01-17 | Northern Telecom Limited | Digital driver with class AB output stage |
| JP3369384B2 (ja) * | 1995-07-12 | 2003-01-20 | 三菱電機株式会社 | 出力バッファ回路 |
| JP3179350B2 (ja) * | 1996-09-09 | 2001-06-25 | 日本電気株式会社 | レベルシフト回路 |
| US6166580A (en) * | 1998-12-18 | 2000-12-26 | Vlsi Technology, Inc. | CMOS high-to-low voltage buffer |
| US6297686B1 (en) | 1999-05-28 | 2001-10-02 | Winbond Electronics Corporation | Semiconductor integrated circuit for low-voltage high-speed operation |
| JP2002033399A (ja) | 2000-07-13 | 2002-01-31 | Toshiba Corp | 半導体集積回路及びその製造方法 |
| US6452418B1 (en) | 2001-06-28 | 2002-09-17 | Koninklijke Philips Electronics N.V. | Level shifter with independent grounds and improved EME-isolation |
| US20070068337A1 (en) * | 2005-09-06 | 2007-03-29 | Matthew Mincer | Ergonomic, adjustable handle for microtomes and cryostats |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436621A (en) * | 1966-12-16 | 1969-04-01 | Texas Instruments Inc | Linear amplifier utilizing a pair of field effect transistors |
| JPS4836975B1 (fr) * | 1967-12-06 | 1973-11-08 | ||
| US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
| US3825772A (en) * | 1973-05-25 | 1974-07-23 | Ibm | Contact bounce eliminator circuit with low standby power |
| DE2348984A1 (de) * | 1973-09-28 | 1975-04-24 | Siemens Ag | Anordnung mit feldeffekttransistoren |
| US3867646A (en) * | 1973-10-05 | 1975-02-18 | Electronic Arrays | MOSFET circuitry for integrated chips interfacing with higher voltage devices |
| JPS50134553A (fr) * | 1974-04-10 | 1975-10-24 | ||
| US3900746A (en) * | 1974-05-03 | 1975-08-19 | Ibm | Voltage level conversion circuit |
| GB1476192A (en) * | 1974-05-29 | 1977-06-10 | Mullard Ltd | Semiconductor switching circuit arrangements |
| JPS5160440A (en) * | 1974-11-22 | 1976-05-26 | Hitachi Ltd | Kotaiatsuyo mis fet suitsuchingukairo |
| US4006491A (en) * | 1975-05-15 | 1977-02-01 | Motorola, Inc. | Integrated circuit having internal main supply voltage regulator |
| JPS525254A (en) * | 1975-07-02 | 1977-01-14 | Hitachi Ltd | High voltage resistance mis switching circuit |
| US4039869A (en) * | 1975-11-28 | 1977-08-02 | Rca Corporation | Protection circuit |
| US4039862A (en) * | 1976-01-19 | 1977-08-02 | Rca Corporation | Level shift circuit |
| US4023050A (en) * | 1976-05-10 | 1977-05-10 | Gte Laboratories Incorporated | Logic level converter |
| US4072868A (en) * | 1976-09-16 | 1978-02-07 | International Business Machines Corporation | FET inverter with isolated substrate load |
-
1978
- 1978-05-01 US US05/902,012 patent/US4191898A/en not_active Expired - Lifetime
-
1979
- 1979-04-24 GB GB7914229A patent/GB2020129B/en not_active Expired
- 1979-04-26 JP JP5200179A patent/JPS54144169A/ja active Pending
- 1979-04-30 DE DE2917599A patent/DE2917599C2/de not_active Expired
- 1979-05-02 FR FR7911062A patent/FR2425151A1/fr active Granted
-
1984
- 1984-02-23 SG SG164/84A patent/SG16484G/en unknown
-
1985
- 1985-12-30 MY MY472/85A patent/MY8500472A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54144169A (en) | 1979-11-10 |
| US4191898A (en) | 1980-03-04 |
| MY8500472A (en) | 1985-12-31 |
| FR2425151A1 (fr) | 1979-11-30 |
| SG16484G (en) | 1985-02-15 |
| GB2020129A (en) | 1979-11-07 |
| DE2917599C2 (de) | 1986-06-26 |
| DE2917599A1 (de) | 1979-11-08 |
| GB2020129B (en) | 1983-02-23 |