FR2404894A1 - Element de memoire a un transistor et procede pour sa fabrication - Google Patents

Element de memoire a un transistor et procede pour sa fabrication

Info

Publication number
FR2404894A1
FR2404894A1 FR7827370A FR7827370A FR2404894A1 FR 2404894 A1 FR2404894 A1 FR 2404894A1 FR 7827370 A FR7827370 A FR 7827370A FR 7827370 A FR7827370 A FR 7827370A FR 2404894 A1 FR2404894 A1 FR 2404894A1
Authority
FR
France
Prior art keywords
transistor
memory element
conductor
manufacture
respect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7827370A
Other languages
English (en)
Other versions
FR2404894B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2404894A1 publication Critical patent/FR2404894A1/fr
Application granted granted Critical
Publication of FR2404894B1 publication Critical patent/FR2404894B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne un élément de mémoire à un transistor et un procédé pour sa fabrication. Dans un élement de mémoire à un transistor T, réalisé sur une couche semiconductrice 1 et comportant des régions de source et de drain 2, 3 et raccordé à un conducteur de bits BL pour une zone 7 et un conducteur de mots WL, ce dernier est formé par une partie d'un premier revêtement conducteur isolé par rapport à la couche 1 et dont une partie forme une partie de l'électrode de porte de T en délimitant la limite de la région du canal, et est transversal par rapport à la voie source-drain 2, 3, le conducteur de bits L s'étendant parallèlement à cette voie. Application notamment à la fabrication d'éléments de mémoire de très petite taille.
FR7827370A 1977-09-28 1978-09-25 Element de memoire a un transistor et procede pour sa fabrication Granted FR2404894A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743662 DE2743662A1 (de) 1977-09-28 1977-09-28 Ein-transistor-speicherelement und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
FR2404894A1 true FR2404894A1 (fr) 1979-04-27
FR2404894B1 FR2404894B1 (fr) 1984-10-26

Family

ID=6020137

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7827370A Granted FR2404894A1 (fr) 1977-09-28 1978-09-25 Element de memoire a un transistor et procede pour sa fabrication

Country Status (5)

Country Link
US (1) US4208670A (fr)
JP (1) JPS603787B2 (fr)
DE (1) DE2743662A1 (fr)
FR (1) FR2404894A1 (fr)
GB (1) GB2005076B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4302765A (en) * 1978-09-05 1981-11-24 Rockwell International Corporation Geometry for fabricating enhancement and depletion-type, pull-up field effect transistor devices
DE2935254A1 (de) * 1979-08-31 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer monolithischen statischen speicherzelle
DE3032632A1 (de) * 1980-08-29 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung integrierter dynamischer ram-eintransistor-speicherzellen
JPS5948889A (ja) * 1982-09-10 1984-03-21 Hitachi Ltd Ｍｏｓ記憶装置
US4639274A (en) * 1984-11-28 1987-01-27 Fairchild Semiconductor Corporation Method of making precision high-value MOS capacitors
US4648909A (en) * 1984-11-28 1987-03-10 Fairchild Semiconductor Corporation Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5539073B2 (fr) * 1974-12-25 1980-10-08
US3997799A (en) * 1975-09-15 1976-12-14 Baker Roger T Semiconductor-device for the storage of binary data
US4150389A (en) * 1976-09-29 1979-04-17 Siemens Aktiengesellschaft N-channel memory field effect transistor
US4139786A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static MOS memory cell using inverted N-channel field-effect transistor

Also Published As

Publication number Publication date
JPS603787B2 (ja) 1985-01-30
DE2743662A1 (de) 1979-04-05
JPS5458383A (en) 1979-05-11
GB2005076B (en) 1982-03-17
FR2404894B1 (fr) 1984-10-26
US4208670A (en) 1980-06-17
GB2005076A (en) 1979-04-11

Similar Documents

Publication Publication Date Title
KR900005597A (ko) 다이내믹 ram 및 그 제조방법
ATE262733T1 (de) Siliciumkarbid-cmos und herstellungsverfahren
JPS57128071A (en) Field-effect type semiconductor device and manufacture thereof
KR920010963A (ko) Soi형 종채널 fet 및 그 제조방법
FR2404894A1 (fr) Element de memoire a un transistor et procede pour sa fabrication
JP2580752B2 (ja) 不揮発性半導体記憶装置
FR2435106A1 (fr) Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication
US3923553A (en) Method of manufacturing lateral or field-effect transistors
US3985591A (en) Method of manufacturing parallel gate matrix circuits
FR2406308A1 (fr) Transistor memoire a effet de champ et matrice de memorisation
JPS62156876A (ja) 半導体装置
US4608751A (en) Method of making dynamic memory array
US5324677A (en) Method of making memory cell and a peripheral circuit
DE2445030A1 (de) Verfahren zum herstellen eines integrierten mos-feldeffekttransistors mit einem schwebenden gate und mit einem steuergate
JPS6437058A (en) Insulated-gate field-effect transistor
KR100187682B1 (ko) 모스펙트 테스트 패턴 제작방법
JPS57128060A (en) Semiconductor device
FR2380620A1 (fr) Dispositifs a memoire morte programmable et procedes de fabrication s'y rapportant
JPH0244763A (ja) 半導体記憶装置およびその製造方法
ATE101752T1 (de) Eprom, der eine mehrfache verwendung der bitleitungskontakte ermoeglicht.
KR100280542B1 (ko) 반도체의 메모리 구조
CN115705854A (zh) 字线驱动器阵列及存储器
EP0376568A3 (fr) Cellule semi-conductrice de mémoire morte et procédé de fabrication
JPH03206661A (ja) 半導体装置
KR100557931B1 (ko) 에스램 디바이스의 제조방법

Legal Events

Date Code Title Description
ST Notification of lapse