FR2396457A1 - Circuit bistable pour memoire a semi-conducteurs - Google Patents

Circuit bistable pour memoire a semi-conducteurs

Info

Publication number
FR2396457A1
FR2396457A1 FR7818739A FR7818739A FR2396457A1 FR 2396457 A1 FR2396457 A1 FR 2396457A1 FR 7818739 A FR7818739 A FR 7818739A FR 7818739 A FR7818739 A FR 7818739A FR 2396457 A1 FR2396457 A1 FR 2396457A1
Authority
FR
France
Prior art keywords
bistable circuit
semiconductor memory
field effect
transistors
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7818739A
Other languages
English (en)
Other versions
FR2396457B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/819,794 external-priority patent/US4132904A/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2396457A1 publication Critical patent/FR2396457A1/fr
Application granted granted Critical
Publication of FR2396457B1 publication Critical patent/FR2396457B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Non-Volatile Memory (AREA)

Abstract

L'invention concerne les mémoires à semi-conducteurs. Un circuit bistable comprend deux transistors à effet de champ, Q2 et Q4 , qui ont une tension de seuil variable, et deux transistors à effet de champ Q1 , Q3 , qui ont une tension de seuil fixe. La modification des tensions de seuil des transistors Q2 et Q3 sous l'effet d'une élévation temporaire de la tension d'alimentation, permet d'effectuer un enregistrement d'information de type non volatif, c'est-à-dire que l'information enregistrée n'est pas perdue en cas de coupure de la tension d'alimentation du circuit. Application à l'informatique.
FR7818739A 1977-06-27 1978-06-22 Circuit bistable pour memoire a semi-conducteurs Granted FR2396457A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2687677 1977-06-27
US05/819,794 US4132904A (en) 1977-07-28 1977-07-28 Volatile/non-volatile logic latch circuit

Publications (2)

Publication Number Publication Date
FR2396457A1 true FR2396457A1 (fr) 1979-01-26
FR2396457B1 FR2396457B1 (fr) 1983-09-16

Family

ID=26258480

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7818739A Granted FR2396457A1 (fr) 1977-06-27 1978-06-22 Circuit bistable pour memoire a semi-conducteurs

Country Status (8)

Country Link
JP (1) JPS5417655A (fr)
CH (1) CH641587A5 (fr)
DE (1) DE2827165C3 (fr)
FR (1) FR2396457A1 (fr)
GB (1) GB2000407B (fr)
HK (1) HK37082A (fr)
IT (1) IT1105369B (fr)
NL (1) NL7806632A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4245165A (en) * 1978-11-29 1981-01-13 International Business Machines Corporation Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
GB2063601B (en) * 1979-11-12 1984-02-29 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
US4387444A (en) * 1980-07-07 1983-06-07 Hughes Aircraft Company Non-volatile semiconductor memory cells
GB2093302B (en) * 1981-02-17 1984-07-18 Hughes Microelectronic Ltd Non-volatile semiconductor memory circuits
GB2104748B (en) * 1981-08-25 1985-01-30 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
CA1189972A (fr) * 1981-11-23 1985-07-02 Andrew C. Tickle Cellule de memoire a auto-regeneration
EP0311146A1 (fr) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Cellulle de mémoire à autogénération
JPS6199413A (ja) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp 出力回路装置
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
GB8807225D0 (en) * 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
JPH01304772A (ja) * 1988-06-02 1989-12-08 Seiko Instr Inc 不揮発性スタティックｒａｍ回路
FR2836752A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique
FR2835947A1 (fr) 2002-02-11 2003-08-15 St Microelectronics Sa Extraction d'un code binaire a partir de parametres physiques d'un circuit integre
US6906962B2 (en) * 2002-09-30 2005-06-14 Agere Systems Inc. Method for defining the initial state of static random access memory
DE102008003385A1 (de) * 2008-01-07 2009-07-09 Qimonda Ag Bistabile Kippstufenschaltung und Verfahren zur Kompensation einer Störung einer bistabilen Kippstufenschaltung
JP5330435B2 (ja) * 2011-03-15 2013-10-30 株式会社東芝 不揮発性コンフィギュレーションメモリ
US11081167B1 (en) * 2020-06-26 2021-08-03 Sandisk Technologies Llc Sense amplifier architecture for low supply voltage operations

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3755791A (en) * 1972-06-01 1973-08-28 Ibm Memory system with temporary or permanent substitution of cells for defective cells
DE2339289C2 (de) * 1973-08-02 1975-02-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bistabile Kippstufe mit MNOS-Transistoren
JPS608638B2 (ja) * 1975-08-06 1985-03-04 日本電気株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/70 *
EXBK/78 *

Also Published As

Publication number Publication date
IT1105369B (it) 1985-10-28
GB2000407B (en) 1982-01-27
NL7806632A (nl) 1978-12-29
HK37082A (en) 1982-08-27
FR2396457B1 (fr) 1983-09-16
JPS5417655A (en) 1979-02-09
IT7850030A0 (it) 1978-06-27
DE2827165B2 (de) 1979-06-21
GB2000407A (en) 1979-01-04
CH641587A5 (de) 1984-02-29
DE2827165A1 (de) 1979-01-04
DE2827165C3 (de) 1984-10-25

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