GB2000407A - Volatile/non-volatile latch - Google Patents

Volatile/non-volatile latch

Info

Publication number
GB2000407A
GB2000407A GB7827166A GB7827166A GB2000407A GB 2000407 A GB2000407 A GB 2000407A GB 7827166 A GB7827166 A GB 7827166A GB 7827166 A GB7827166 A GB 7827166A GB 2000407 A GB2000407 A GB 2000407A
Authority
GB
United Kingdom
Prior art keywords
volatile
transistors
threshold
latch circuit
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7827166A
Other versions
GB2000407B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/819,794 external-priority patent/US4132904A/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB2000407A publication Critical patent/GB2000407A/en
Application granted granted Critical
Publication of GB2000407B publication Critical patent/GB2000407B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A logic element employing fixed threshold and variable threshold transistors are electrically connected together to form a latch circuit which can be made to retain data by keeping certain internal nodes at a high or low voltage level. One or several of the transistors of the latch circuit have threshold voltage that can be raised or lowered upon application of a relatively high voltage pulse between their gate electrode and substrate. This gives the circuit a non-volatile storage capability making it useful as a memory element.
GB7827166A 1977-06-27 1978-06-16 Volatile/non-volatile logic latch circuit Expired GB2000407B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2687677 1977-06-27
US05/819,794 US4132904A (en) 1977-07-28 1977-07-28 Volatile/non-volatile logic latch circuit

Publications (2)

Publication Number Publication Date
GB2000407A true GB2000407A (en) 1979-01-04
GB2000407B GB2000407B (en) 1982-01-27

Family

ID=26258480

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7827166A Expired GB2000407B (en) 1977-06-27 1978-06-16 Volatile/non-volatile logic latch circuit

Country Status (8)

Country Link
JP (1) JPS5417655A (en)
CH (1) CH641587A5 (en)
DE (1) DE2827165C3 (en)
FR (1) FR2396457A1 (en)
GB (1) GB2000407B (en)
HK (1) HK37082A (en)
IT (1) IT1105369B (en)
NL (1) NL7806632A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028935A2 (en) * 1979-11-12 1981-05-20 Hughes Microelectronics Limited Nonvolatile semiconductor memory circuits
EP0058279A2 (en) * 1981-02-17 1982-08-25 Hughes Microelectronics Limited Non-volatile semiconductor memory circuits
EP0074213A2 (en) * 1981-08-25 1983-03-16 Hughes Microelectronics Limited Non-volatile semiconductor memory circuits
EP0080415A2 (en) * 1981-11-23 1983-06-01 Fairchild Semiconductor Corporation Self-refreshing memory cell
US4387444A (en) * 1980-07-07 1983-06-07 Hughes Aircraft Company Non-volatile semiconductor memory cells
GB2171571A (en) * 1985-02-27 1986-08-28 Hughes Microelectronics Ltd Non-volatile memory
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
EP0345058A2 (en) * 1988-06-02 1989-12-06 Seiko Instruments Inc. Non-volatile static RAM circuit
US5051956A (en) * 1988-03-25 1991-09-24 Hughes Microelectronics Limited Memory cell having means for maintaining the gate and substrate at the same potential
WO2003069631A2 (en) * 2002-02-11 2003-08-21 Stmicroelectronics S.A. One-time programmable memory cell
GB2394338B (en) * 2002-09-30 2007-04-25 Agere Systems Inc Method for defining the initial state of static random access memory
US7660182B2 (en) 2002-02-11 2010-02-09 Stmicroelectronics Inc. Extraction and stabilization of a binary code based on physical parameters of an integrated circuit
CN113851157A (en) * 2020-06-26 2021-12-28 闪迪技术有限公司 Sense amplifier architecture for low supply voltage operation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4245165A (en) * 1978-11-29 1981-01-13 International Business Machines Corporation Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
JPS6199413A (en) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp Output circuit device
DE102008003385A1 (en) * 2008-01-07 2009-07-09 Qimonda Ag Flip-flop circuit i.e. latch, for e.g. electronic component, has transmission circuit designed to couple signal and control signal strongly at node and to couple signal weakly at node without control signal or to decouple signal from node
JP5330435B2 (en) * 2011-03-15 2013-10-30 株式会社東芝 Non-volatile configuration memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3660827A (en) * 1969-09-10 1972-05-02 Litton Systems Inc Bistable electrical circuit with non-volatile storage capability
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3755791A (en) * 1972-06-01 1973-08-28 Ibm Memory system with temporary or permanent substitution of cells for defective cells
DE2339289C2 (en) * 1973-08-02 1975-02-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bistable multivibrator with MNOS transistors
JPS608638B2 (en) * 1975-08-06 1985-03-04 日本電気株式会社 semiconductor equipment
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028935A2 (en) * 1979-11-12 1981-05-20 Hughes Microelectronics Limited Nonvolatile semiconductor memory circuits
EP0028935A3 (en) * 1979-11-12 1982-05-12 Hughes Microelectronics Limited Nonvolatile semiconductor memory circuits
US4387444A (en) * 1980-07-07 1983-06-07 Hughes Aircraft Company Non-volatile semiconductor memory cells
EP0058279A2 (en) * 1981-02-17 1982-08-25 Hughes Microelectronics Limited Non-volatile semiconductor memory circuits
EP0058279A3 (en) * 1981-02-17 1984-01-04 Hughes Microelectronics Limited Non-volatile semiconductor memory circuits
EP0074213A2 (en) * 1981-08-25 1983-03-16 Hughes Microelectronics Limited Non-volatile semiconductor memory circuits
EP0074213A3 (en) * 1981-08-25 1985-05-15 Hughes Microelectronics Limited Non-volatile semiconductor memory circuits
EP0080415A2 (en) * 1981-11-23 1983-06-01 Fairchild Semiconductor Corporation Self-refreshing memory cell
EP0080415A3 (en) * 1981-11-23 1985-10-09 Fairchild Camera & Instrument Corporation Self-refreshing memory cell
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
US4730274A (en) * 1985-02-27 1988-03-08 Hughes Aircraft Company Non-volatile memory with predictable failure modes and method of data storage and retrieval
GB2171571A (en) * 1985-02-27 1986-08-28 Hughes Microelectronics Ltd Non-volatile memory
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
US5051956A (en) * 1988-03-25 1991-09-24 Hughes Microelectronics Limited Memory cell having means for maintaining the gate and substrate at the same potential
EP0345058A2 (en) * 1988-06-02 1989-12-06 Seiko Instruments Inc. Non-volatile static RAM circuit
EP0345058A3 (en) * 1988-06-02 1991-12-18 Seiko Instruments Inc. Non-volatile static ram circuit
WO2003069631A2 (en) * 2002-02-11 2003-08-21 Stmicroelectronics S.A. One-time programmable memory cell
FR2836752A1 (en) * 2002-02-11 2003-09-05 St Microelectronics Sa SINGLE PROGRAMMED MEMORY CELL
WO2003069631A3 (en) * 2002-02-11 2004-08-12 St Microelectronics Sa One-time programmable memory cell
US7660182B2 (en) 2002-02-11 2010-02-09 Stmicroelectronics Inc. Extraction and stabilization of a binary code based on physical parameters of an integrated circuit
US7978540B2 (en) 2002-02-11 2011-07-12 Stmicroelectronics S.A. Extraction of a binary code based on physical parameters of an integrated circuit via programming resistors
GB2394338B (en) * 2002-09-30 2007-04-25 Agere Systems Inc Method for defining the initial state of static random access memory
CN113851157A (en) * 2020-06-26 2021-12-28 闪迪技术有限公司 Sense amplifier architecture for low supply voltage operation

Also Published As

Publication number Publication date
DE2827165A1 (en) 1979-01-04
FR2396457B1 (en) 1983-09-16
DE2827165B2 (en) 1979-06-21
IT1105369B (en) 1985-10-28
DE2827165C3 (en) 1984-10-25
JPS5417655A (en) 1979-02-09
FR2396457A1 (en) 1979-01-26
GB2000407B (en) 1982-01-27
IT7850030A0 (en) 1978-06-27
CH641587A5 (en) 1984-02-29
HK37082A (en) 1982-08-27
NL7806632A (en) 1978-12-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950616