FR2376495A1 - Memoire permanente mnos avec suppression de cycle d'inscription - Google Patents

Memoire permanente mnos avec suppression de cycle d'inscription

Info

Publication number
FR2376495A1
FR2376495A1 FR7735954A FR7735954A FR2376495A1 FR 2376495 A1 FR2376495 A1 FR 2376495A1 FR 7735954 A FR7735954 A FR 7735954A FR 7735954 A FR7735954 A FR 7735954A FR 2376495 A1 FR2376495 A1 FR 2376495A1
Authority
FR
France
Prior art keywords
circuit
threshold voltage
deletion
registration cycle
permanent memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7735954A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2376495A1 publication Critical patent/FR2376495A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/01855—Interface arrangements synchronous, i.e. using clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)

Abstract

a. Mémoire permanente MNOS avec suppression de cycle d'inscription. b. Montage de cellule de mémoire, à semi-conducteur pour enregistrer une information, montage composé d'au moins une cellule de mémoire ayant un premier et un second transistors à effet de champ à seuil variable, un premier circuit pour modifier la tension de seuil du premier transistor à seuil variable, un second circuit pour modifier la tension de seuil du second transistor à seuil variable en même temps que le premier moyen, le premier circuit comportant un circuit pour augmenter la tension de seuil et le second circuit comportant un circuit pour réduire la tension du seuiL
FR7735954A 1976-12-29 1977-11-29 Memoire permanente mnos avec suppression de cycle d'inscription Pending FR2376495A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/755,280 US4090258A (en) 1976-12-29 1976-12-29 MNOS non-volatile memory with write cycle suppression

Publications (1)

Publication Number Publication Date
FR2376495A1 true FR2376495A1 (fr) 1978-07-28

Family

ID=25038492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7735954A Pending FR2376495A1 (fr) 1976-12-29 1977-11-29 Memoire permanente mnos avec suppression de cycle d'inscription

Country Status (4)

Country Link
US (1) US4090258A (fr)
JP (2) JPS5384433A (fr)
DE (1) DE2757987A1 (fr)
FR (1) FR2376495A1 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611308A (en) * 1978-06-29 1986-09-09 Westinghouse Electric Corp. Drain triggered N-channel non-volatile memory
US4179626A (en) * 1978-06-29 1979-12-18 Westinghouse Electric Corp. Sense circuit for use in variable threshold transistor memory arrays
JPS5671884A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor storage device
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
US4398269A (en) * 1981-07-23 1983-08-09 Sperry Corporation MNOS Over-write protection circuitry
EP0082208B1 (fr) * 1981-12-17 1985-11-21 Deutsche ITT Industries GmbH Circuit de commutation intégré du type CMOS
US4575823A (en) * 1982-08-17 1986-03-11 Westinghouse Electric Corp. Electrically alterable non-volatile memory
US4535428A (en) * 1983-03-10 1985-08-13 International Business Machines Corporation Multi-port register implementations
US4577292A (en) * 1983-05-31 1986-03-18 International Business Machines Corporation Support circuitry for multi-port systems
US4558433A (en) * 1983-05-31 1985-12-10 International Business Machines Corporation Multi-port register implementations
US4616347A (en) * 1983-05-31 1986-10-07 International Business Machines Corporation Multi-port system
US4578777A (en) * 1983-07-11 1986-03-25 Signetics Corporation One step write circuit arrangement for EEPROMS
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
US4599707A (en) * 1984-03-01 1986-07-08 Signetics Corporation Byte wide EEPROM with individual write circuits and write prevention means
JPS62165793A (ja) * 1986-01-17 1987-07-22 Toshiba Corp 連想メモリ
FR2620246B1 (fr) * 1987-03-31 1989-11-24 Smh Alcatel Memoire non volatile a faible taux d'ecriture et machine a affranchir en faisant application
US4811296A (en) * 1987-05-15 1989-03-07 Analog Devices, Inc. Multi-port register file with flow-through of data
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JPH02260298A (ja) * 1989-03-31 1990-10-23 Oki Electric Ind Co Ltd 不揮発性多値メモリ装置
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
EP0392895B1 (fr) * 1989-04-13 1995-12-13 Sundisk Corporation Système EEprom avec effacement en bloc
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JP2502008B2 (ja) * 1992-06-04 1996-05-29 株式会社東芝 不揮発性半導体メモリ
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JP3863124B2 (ja) * 2003-05-08 2006-12-27 株式会社東芝 半導体記憶装置及びそのテスト方法
US6870772B1 (en) * 2003-09-12 2005-03-22 Renesas Technology Corp. Nonvolatile semiconductor memory device
US7283390B2 (en) * 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations
DE2135625B1 (de) * 1971-07-16 1973-01-04 Ibm Deutschland Gmbh, 7000 Stuttgart Schaltungsanordnung zur automatischen Schreib-Unterdrückung
DE2347968C3 (de) * 1973-09-24 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Assoziative Speicherzelle
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory
JPS50131723A (fr) * 1974-04-04 1975-10-18

Also Published As

Publication number Publication date
JPS6280Y2 (fr) 1987-01-06
US4090258A (en) 1978-05-16
JPS5384433A (en) 1978-07-25
JPS613599U (ja) 1986-01-10
DE2757987A1 (de) 1978-07-06

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