IT1105369B - Circuito logico di aggancio bistabile volatile/non volatile - Google Patents
Circuito logico di aggancio bistabile volatile/non volatileInfo
- Publication number
- IT1105369B IT1105369B IT50030/78A IT5003078A IT1105369B IT 1105369 B IT1105369 B IT 1105369B IT 50030/78 A IT50030/78 A IT 50030/78A IT 5003078 A IT5003078 A IT 5003078A IT 1105369 B IT1105369 B IT 1105369B
- Authority
- IT
- Italy
- Prior art keywords
- volatile
- logic circuit
- coupling logic
- bistable coupling
- bistable
- Prior art date
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Logic Circuits (AREA)
- Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2687677 | 1977-06-27 | ||
US05/819,794 US4132904A (en) | 1977-07-28 | 1977-07-28 | Volatile/non-volatile logic latch circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7850030A0 IT7850030A0 (it) | 1978-06-27 |
IT1105369B true IT1105369B (it) | 1985-10-28 |
Family
ID=26258480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT50030/78A IT1105369B (it) | 1977-06-27 | 1978-06-27 | Circuito logico di aggancio bistabile volatile/non volatile |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5417655A (it) |
CH (1) | CH641587A5 (it) |
DE (1) | DE2827165C3 (it) |
FR (1) | FR2396457A1 (it) |
GB (1) | GB2000407B (it) |
HK (1) | HK37082A (it) |
IT (1) | IT1105369B (it) |
NL (1) | NL7806632A (it) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4245165A (en) * | 1978-11-29 | 1981-01-13 | International Business Machines Corporation | Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control |
GB2063601B (en) * | 1979-11-12 | 1984-02-29 | Hughes Microelectronics Ltd | Non-volatile semiconductor memory circuits |
US4387444A (en) * | 1980-07-07 | 1983-06-07 | Hughes Aircraft Company | Non-volatile semiconductor memory cells |
GB2093302B (en) * | 1981-02-17 | 1984-07-18 | Hughes Microelectronic Ltd | Non-volatile semiconductor memory circuits |
GB2104748B (en) * | 1981-08-25 | 1985-01-30 | Hughes Microelectronics Ltd | Non-volatile semiconductor memory circuits |
EP0311146A1 (en) * | 1981-11-23 | 1989-04-12 | Fairchild Semiconductor Corporation | Self-refreshing memory cell |
CA1189972A (en) * | 1981-11-23 | 1985-07-02 | Andrew C. Tickle | Self-refreshing memory cell |
JPS6199413A (ja) * | 1984-10-19 | 1986-05-17 | Mitsubishi Electric Corp | 出力回路装置 |
GB2171571B (en) * | 1985-02-27 | 1989-06-14 | Hughes Microelectronics Ltd | Non-volatile memory with predictable failure modes and method of data storage and retrieval |
GB8807225D0 (en) * | 1988-03-25 | 1988-04-27 | Hughes Microelectronics Ltd | Nonvolatile ram cell |
JPH01304772A (ja) * | 1988-06-02 | 1989-12-08 | Seiko Instr Inc | 不揮発性スタティックram回路 |
FR2836752A1 (fr) * | 2002-02-11 | 2003-09-05 | St Microelectronics Sa | Cellule memoire a programmation unique |
FR2835947A1 (fr) | 2002-02-11 | 2003-08-15 | St Microelectronics Sa | Extraction d'un code binaire a partir de parametres physiques d'un circuit integre |
US6906962B2 (en) * | 2002-09-30 | 2005-06-14 | Agere Systems Inc. | Method for defining the initial state of static random access memory |
DE102008003385A1 (de) * | 2008-01-07 | 2009-07-09 | Qimonda Ag | Bistabile Kippstufenschaltung und Verfahren zur Kompensation einer Störung einer bistabilen Kippstufenschaltung |
JP5330435B2 (ja) * | 2011-03-15 | 2013-10-30 | 株式会社東芝 | 不揮発性コンフィギュレーションメモリ |
US11081167B1 (en) * | 2020-06-26 | 2021-08-03 | Sandisk Technologies Llc | Sense amplifier architecture for low supply voltage operations |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3590337A (en) * | 1968-10-14 | 1971-06-29 | Sperry Rand Corp | Plural dielectric layered electrically alterable non-destructive readout memory element |
US3636530A (en) * | 1969-09-10 | 1972-01-18 | Litton Systems Inc | Nonvolatile direct storage bistable circuit |
US3676717A (en) * | 1970-11-02 | 1972-07-11 | Ncr Co | Nonvolatile flip-flop memory cell |
US3755791A (en) * | 1972-06-01 | 1973-08-28 | Ibm | Memory system with temporary or permanent substitution of cells for defective cells |
DE2339289C2 (de) * | 1973-08-02 | 1975-02-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Bistabile Kippstufe mit MNOS-Transistoren |
JPS608638B2 (ja) * | 1975-08-06 | 1985-03-04 | 日本電気株式会社 | 半導体装置 |
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
-
1978
- 1978-06-16 GB GB7827166A patent/GB2000407B/en not_active Expired
- 1978-06-20 NL NL7806632A patent/NL7806632A/xx not_active Application Discontinuation
- 1978-06-21 DE DE2827165A patent/DE2827165C3/de not_active Expired
- 1978-06-22 FR FR7818739A patent/FR2396457A1/fr active Granted
- 1978-06-26 CH CH694678A patent/CH641587A5/de not_active IP Right Cessation
- 1978-06-27 IT IT50030/78A patent/IT1105369B/it active
- 1978-06-27 JP JP7707378A patent/JPS5417655A/ja active Pending
-
1982
- 1982-08-19 HK HK370/82A patent/HK37082A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
HK37082A (en) | 1982-08-27 |
CH641587A5 (de) | 1984-02-29 |
DE2827165A1 (de) | 1979-01-04 |
GB2000407B (en) | 1982-01-27 |
FR2396457A1 (fr) | 1979-01-26 |
JPS5417655A (en) | 1979-02-09 |
IT7850030A0 (it) | 1978-06-27 |
DE2827165B2 (de) | 1979-06-21 |
GB2000407A (en) | 1979-01-04 |
NL7806632A (nl) | 1978-12-29 |
DE2827165C3 (de) | 1984-10-25 |
FR2396457B1 (it) | 1983-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19940531 |