IT1105369B - Circuito logico di aggancio bistabile volatile/non volatile - Google Patents

Circuito logico di aggancio bistabile volatile/non volatile

Info

Publication number
IT1105369B
IT1105369B IT50030/78A IT5003078A IT1105369B IT 1105369 B IT1105369 B IT 1105369B IT 50030/78 A IT50030/78 A IT 50030/78A IT 5003078 A IT5003078 A IT 5003078A IT 1105369 B IT1105369 B IT 1105369B
Authority
IT
Italy
Prior art keywords
volatile
logic circuit
coupling logic
bistable coupling
bistable
Prior art date
Application number
IT50030/78A
Other languages
English (en)
Other versions
IT7850030A0 (it
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/819,794 external-priority patent/US4132904A/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IT7850030A0 publication Critical patent/IT7850030A0/it
Application granted granted Critical
Publication of IT1105369B publication Critical patent/IT1105369B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356008Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/12Static random access memory [SRAM] devices comprising a MOSFET load element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/15Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
IT50030/78A 1977-06-27 1978-06-27 Circuito logico di aggancio bistabile volatile/non volatile IT1105369B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2687677 1977-06-27
US05/819,794 US4132904A (en) 1977-07-28 1977-07-28 Volatile/non-volatile logic latch circuit

Publications (2)

Publication Number Publication Date
IT7850030A0 IT7850030A0 (it) 1978-06-27
IT1105369B true IT1105369B (it) 1985-10-28

Family

ID=26258480

Family Applications (1)

Application Number Title Priority Date Filing Date
IT50030/78A IT1105369B (it) 1977-06-27 1978-06-27 Circuito logico di aggancio bistabile volatile/non volatile

Country Status (8)

Country Link
JP (1) JPS5417655A (it)
CH (1) CH641587A5 (it)
DE (1) DE2827165C3 (it)
FR (1) FR2396457A1 (it)
GB (1) GB2000407B (it)
HK (1) HK37082A (it)
IT (1) IT1105369B (it)
NL (1) NL7806632A (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4245165A (en) * 1978-11-29 1981-01-13 International Business Machines Corporation Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
GB2063601B (en) * 1979-11-12 1984-02-29 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
US4387444A (en) * 1980-07-07 1983-06-07 Hughes Aircraft Company Non-volatile semiconductor memory cells
GB2093302B (en) * 1981-02-17 1984-07-18 Hughes Microelectronic Ltd Non-volatile semiconductor memory circuits
GB2104748B (en) * 1981-08-25 1985-01-30 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
CA1189972A (en) * 1981-11-23 1985-07-02 Andrew C. Tickle Self-refreshing memory cell
JPS6199413A (ja) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp 出力回路装置
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
GB8807225D0 (en) * 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
JPH01304772A (ja) * 1988-06-02 1989-12-08 Seiko Instr Inc 不揮発性スタティックram回路
FR2836752A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique
FR2835947A1 (fr) 2002-02-11 2003-08-15 St Microelectronics Sa Extraction d'un code binaire a partir de parametres physiques d'un circuit integre
US6906962B2 (en) * 2002-09-30 2005-06-14 Agere Systems Inc. Method for defining the initial state of static random access memory
DE102008003385A1 (de) * 2008-01-07 2009-07-09 Qimonda Ag Bistabile Kippstufenschaltung und Verfahren zur Kompensation einer Störung einer bistabilen Kippstufenschaltung
JP5330435B2 (ja) * 2011-03-15 2013-10-30 株式会社東芝 不揮発性コンフィギュレーションメモリ
US11081167B1 (en) * 2020-06-26 2021-08-03 Sandisk Technologies Llc Sense amplifier architecture for low supply voltage operations

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3755791A (en) * 1972-06-01 1973-08-28 Ibm Memory system with temporary or permanent substitution of cells for defective cells
DE2339289C2 (de) * 1973-08-02 1975-02-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bistabile Kippstufe mit MNOS-Transistoren
JPS608638B2 (ja) * 1975-08-06 1985-03-04 日本電気株式会社 半導体装置
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell

Also Published As

Publication number Publication date
HK37082A (en) 1982-08-27
CH641587A5 (de) 1984-02-29
DE2827165A1 (de) 1979-01-04
GB2000407B (en) 1982-01-27
FR2396457A1 (fr) 1979-01-26
JPS5417655A (en) 1979-02-09
IT7850030A0 (it) 1978-06-27
DE2827165B2 (de) 1979-06-21
GB2000407A (en) 1979-01-04
NL7806632A (nl) 1978-12-29
DE2827165C3 (de) 1984-10-25
FR2396457B1 (it) 1983-09-16

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940531