FR2396457B1 - - Google Patents
Info
- Publication number
- FR2396457B1 FR2396457B1 FR7818739A FR7818739A FR2396457B1 FR 2396457 B1 FR2396457 B1 FR 2396457B1 FR 7818739 A FR7818739 A FR 7818739A FR 7818739 A FR7818739 A FR 7818739A FR 2396457 B1 FR2396457 B1 FR 2396457B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Logic Circuits (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2687677 | 1977-06-27 | ||
US05/819,794 US4132904A (en) | 1977-07-28 | 1977-07-28 | Volatile/non-volatile logic latch circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2396457A1 FR2396457A1 (fr) | 1979-01-26 |
FR2396457B1 true FR2396457B1 (fr) | 1983-09-16 |
Family
ID=26258480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7818739A Granted FR2396457A1 (fr) | 1977-06-27 | 1978-06-22 | Circuit bistable pour memoire a semi-conducteurs |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5417655A (fr) |
CH (1) | CH641587A5 (fr) |
DE (1) | DE2827165C3 (fr) |
FR (1) | FR2396457A1 (fr) |
GB (1) | GB2000407B (fr) |
HK (1) | HK37082A (fr) |
IT (1) | IT1105369B (fr) |
NL (1) | NL7806632A (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4245165A (en) * | 1978-11-29 | 1981-01-13 | International Business Machines Corporation | Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control |
GB2063601B (en) * | 1979-11-12 | 1984-02-29 | Hughes Microelectronics Ltd | Non-volatile semiconductor memory circuits |
US4387444A (en) * | 1980-07-07 | 1983-06-07 | Hughes Aircraft Company | Non-volatile semiconductor memory cells |
GB2093302B (en) * | 1981-02-17 | 1984-07-18 | Hughes Microelectronic Ltd | Non-volatile semiconductor memory circuits |
GB2104748B (en) * | 1981-08-25 | 1985-01-30 | Hughes Microelectronics Ltd | Non-volatile semiconductor memory circuits |
EP0311146A1 (fr) * | 1981-11-23 | 1989-04-12 | Fairchild Semiconductor Corporation | Cellulle de mémoire à autogénération |
CA1189972A (fr) * | 1981-11-23 | 1985-07-02 | Andrew C. Tickle | Cellule de memoire a auto-regeneration |
JPS6199413A (ja) * | 1984-10-19 | 1986-05-17 | Mitsubishi Electric Corp | 出力回路装置 |
GB2171571B (en) * | 1985-02-27 | 1989-06-14 | Hughes Microelectronics Ltd | Non-volatile memory with predictable failure modes and method of data storage and retrieval |
GB8807225D0 (en) * | 1988-03-25 | 1988-04-27 | Hughes Microelectronics Ltd | Nonvolatile ram cell |
JPH01304772A (ja) * | 1988-06-02 | 1989-12-08 | Seiko Instr Inc | 不揮発性スタティックram回路 |
FR2836752A1 (fr) * | 2002-02-11 | 2003-09-05 | St Microelectronics Sa | Cellule memoire a programmation unique |
FR2835947A1 (fr) | 2002-02-11 | 2003-08-15 | St Microelectronics Sa | Extraction d'un code binaire a partir de parametres physiques d'un circuit integre |
US6906962B2 (en) * | 2002-09-30 | 2005-06-14 | Agere Systems Inc. | Method for defining the initial state of static random access memory |
DE102008003385A1 (de) * | 2008-01-07 | 2009-07-09 | Qimonda Ag | Bistabile Kippstufenschaltung und Verfahren zur Kompensation einer Störung einer bistabilen Kippstufenschaltung |
JP5330435B2 (ja) * | 2011-03-15 | 2013-10-30 | 株式会社東芝 | 不揮発性コンフィギュレーションメモリ |
US11081167B1 (en) * | 2020-06-26 | 2021-08-03 | Sandisk Technologies Llc | Sense amplifier architecture for low supply voltage operations |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3590337A (en) * | 1968-10-14 | 1971-06-29 | Sperry Rand Corp | Plural dielectric layered electrically alterable non-destructive readout memory element |
US3660827A (en) * | 1969-09-10 | 1972-05-02 | Litton Systems Inc | Bistable electrical circuit with non-volatile storage capability |
US3676717A (en) * | 1970-11-02 | 1972-07-11 | Ncr Co | Nonvolatile flip-flop memory cell |
US3755791A (en) * | 1972-06-01 | 1973-08-28 | Ibm | Memory system with temporary or permanent substitution of cells for defective cells |
DE2339289C2 (de) * | 1973-08-02 | 1975-02-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Bistabile Kippstufe mit MNOS-Transistoren |
JPS608638B2 (ja) * | 1975-08-06 | 1985-03-04 | 日本電気株式会社 | 半導体装置 |
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
-
1978
- 1978-06-16 GB GB7827166A patent/GB2000407B/en not_active Expired
- 1978-06-20 NL NL7806632A patent/NL7806632A/xx not_active Application Discontinuation
- 1978-06-21 DE DE2827165A patent/DE2827165C3/de not_active Expired
- 1978-06-22 FR FR7818739A patent/FR2396457A1/fr active Granted
- 1978-06-26 CH CH694678A patent/CH641587A5/de not_active IP Right Cessation
- 1978-06-27 JP JP7707378A patent/JPS5417655A/ja active Pending
- 1978-06-27 IT IT50030/78A patent/IT1105369B/it active
-
1982
- 1982-08-19 HK HK370/82A patent/HK37082A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2827165A1 (de) | 1979-01-04 |
DE2827165B2 (de) | 1979-06-21 |
IT1105369B (it) | 1985-10-28 |
DE2827165C3 (de) | 1984-10-25 |
JPS5417655A (en) | 1979-02-09 |
FR2396457A1 (fr) | 1979-01-26 |
GB2000407B (en) | 1982-01-27 |
IT7850030A0 (it) | 1978-06-27 |
CH641587A5 (de) | 1984-02-29 |
GB2000407A (en) | 1979-01-04 |
HK37082A (en) | 1982-08-27 |
NL7806632A (nl) | 1978-12-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |